Yaohua Tan
Yaohua Tan
University of Virginia
Подтвержден адрес электронной почты в домене purdue.edu - Главная страница
Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials
H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
Efficient and realistic device modeling from atomic detail to the nanoscale
JE Fonseca, T Kubis, M Povolotskyi, B Novakovic, A Ajoy, G Hegde, ...
Journal of Computational Electronics 12 (4), 592-600, 2013
Saving Moore’s law down to 1 nm channels with anisotropic effective mass
H Ilatikhameneh, T Ameen, B Novakovic, Y Tan, G Klimeck, R Rahman
Scientific reports 6 (1), 31501, 2016
Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution
YP Tan, M Povolotskyi, T Kubis, TB Boykin, G Klimeck
Physical Review B 92 (8), 085301, 2015
Transferable tight-binding model for strained group IV and III-V materials and heterostructures
Y Tan, M Povolotskyi, T Kubis, TB Boykin, G Klimeck
Physical Review B 94 (4), 045311, 2016
Spin-lattice relaxation times of single donors and donor clusters in silicon
YL Hsueh, H Büch, Y Tan, Y Wang, LCL Hollenberg, G Klimeck, ...
Physical review letters 113 (24), 246406, 2014
III–V FET channel designs for high current densities and thin inversion layers
M Rodwell, W Frensley, S Steiger, E Chagarov, S Lee, H Ryu, Y Tan, ...
68th Device Research Conference, 149-152, 2010
Digital alloy InAlAs avalanche photodiodes
J Zheng, Y Yuan, Y Tan, Y Peng, AK Rockwell, SR Bank, AW Ghosh, ...
Journal of Lightwave Technology 36 (17), 3580-3585, 2018
Switching mechanism and the scalability of vertical-TFETs
F Chen, H Ilatikhameneh, Y Tan, G Klimeck, R Rahman
IEEE Transactions on Electron Devices 65 (7), 3065-3068, 2018
Design principles for HgTe based topological insulator devices
P Sengupta, T Kubis, Y Tan, M Povolotskyi, G Klimeck
Journal of Applied Physics 114 (4), 2013
Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping
Y Tan, M Povolotskyi, T Kubis, Y He, Z Jiang, G Klimeck, TB Boykin
Journal of Computational Electronics 12, 56-60, 2013
Colossal tunability in high frequency magnetoelectric voltage tunable inductors
Y Yan, LD Geng, Y Tan, J Ma, L Zhang, M Sanghadasa, K Ngo, ...
Nature communications 9 (1), 4998, 2018
First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding
Y Tan, FW Chen, AW Ghosh
Applied Physics Letters 109 (10), 2016
Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys
Y Yuan, J Zheng, Y Tan, Y Peng, AK Rockwell, SR Bank, A Ghosh, ...
Photonics Research 6 (8), 794-799, 2018
Toward deterministic construction of low noise avalanche photodetector materials
AK Rockwell, M Ren, M Woodson, AH Jones, SD March, Y Tan, Y Yuan, ...
Applied Physics Letters 113 (10), 2018
Single layer MoS2 band structure and transport
M Salmani-Jelodar, Y Tan, G Klimeck
2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011
Analytical electron-mobility model for arbitrarily stressed silicon
Y Tan, X Li, L Tian, Z Yu
IEEE transactions on electron devices 55 (6), 1386-1390, 2008
Nemo5, a parallel, multiscale, multiphysics nanoelectronics modeling tool
J Sellier, J Fonseca, TC Kubis, M Povolotskyi, Y He, H Ilatikhameneh, ...
Proc. SISPAD, 1-4, 2012
Strain effect on band structure of InAlAs digital alloy
J Zheng, Y Tan, Y Yuan, AW Ghosh, JC Campbell
Journal of Applied Physics 125 (8), 2019
Machine learning electron correlation in a disordered medium
J Ma, P Zhang, Y Tan, AW Ghosh, GW Chern
Physical Review B 99 (8), 085118, 2019
В данный момент система не может выполнить эту операцию. Повторите попытку позднее.
Статьи 1–20