| Development of nuclear microbattery prototype based on Schottky barrier diamond diodes V Bormashov, S Troschiev, A Volkov, S Tarelkin, E Korostylev, ... physica status solidi (a) 212 (11), 2539-2547, 2015 | 90 | 2015 |
| High power density nuclear battery prototype based on diamond Schottky diodes VS Bormashov, SY Troschiev, SA Tarelkin, AP Volkov, DV Teteruk, ... Diamond and related materials 84, 41-47, 2018 | 87 | 2018 |
| Electrical properties of the high quality boron-doped synthetic single-crystal diamonds grown by the temperature gradient method VS Bormashov, SA Tarelkin, SG Buga, MS Kuznetsov, SA Terentiev, ... Diamond and related materials 35, 19-23, 2013 | 87 | 2013 |
| Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3 AY Polyakov, NB Smirnov, IV Shchemerov, D Gogova, SA Tarelkin, ... Journal of Applied Physics 123 (11), 2018 | 86 | 2018 |
| Power high-voltage and fast response Schottky barrier diamond diodes VD Blank, VS Bormashov, SA Tarelkin, SG Buga, MS Kuznetsov, ... Diamond and Related Materials 57, 32-36, 2015 | 83 | 2015 |
| Power diamond vertical Schottky barrier diode with 10 A forward current S Tarelkin, V Bormashov, S Buga, A Volkov, D Teteruk, N Kornilov, ... Physica status solidi (a) 212 (11), 2621-2627, 2015 | 52 | 2015 |
| Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique VS Bormashov, SA Terentiev, SG Buga, SA Tarelkin, AP Volkov, ... Diamond and Related Materials 75, 78-84, 2017 | 47 | 2017 |
| Ultrawide-bandgap pn heterojunction of diamond/β-Ga2O3 for a solar-blind photodiode H Kim, S Tarelkin, A Polyakov, S Troschiev, S Nosukhin, M Kuznetsov, ... ECS Journal of Solid State Science and Technology 9 (4), 045004, 2020 | 45 | 2020 |
| Spatially controlled fabrication of single NV centers in IIa HPHT diamond SD Trofimov, SA Tarelkin, SV Bolshedvorskii, VS Bormashov, ... Optical Materials Express 10 (1), 198-207, 2020 | 44 | 2020 |
| Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy IH Lee, AY Polyakov, EB Yakimov, NB Smirnov, IV Shchemerov, ... Applied Physics Letters 110 (11), 2017 | 36 | 2017 |
| Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN AY Polyakov, NB Smirnov, EB Yakimov, SA Tarelkin, AV Turutin, ... Journal of Alloys and Compounds 686, 1044-1052, 2016 | 31 | 2016 |
| Comparative study of different metals for Schottky barrier diamond betavoltaic power converter by EBIC technique S Tarelkin, V Bormashov, E Korostylev, S Troschiev, D Teteruk, ... physica status solidi (a) 213 (9), 2492-2497, 2016 | 29 | 2016 |
| Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN IH Lee, AY Polyakov, NB Smirnov, EB Yakimov, SA Tarelkin, AV Turutin, ... Journal of Applied Physics 119 (20), 2016 | 27 | 2016 |
| Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs IH Lee, AY Polyakov, SM Hwang, NM Shmidt, EI Shabunina, ... Applied Physics Letters 111 (6), 2017 | 25 | 2017 |
| Superconductivity in bulk polycrystalline metastable phases of Sb2Te3 and Bi2Te3 quenched after high-pressure–high-temperature treatment SG Buga, VA Kulbachinskii, VG Kytin, GA Kytin, IA Kruglov, NA Lvova, ... Chemical Physics Letters 631, 97-102, 2015 | 23 | 2015 |
| Thermal conductivity of synthetic boron-doped single-crystal HPHT diamond from 20 to 400 K D Prikhodko, S Tarelkin, V Bormashov, A Golovanov, M Kuznetsov, ... MRS communications 6 (2), 71-76, 2016 | 20 | 2016 |
| Optimization of the coherence properties of diamond samples with an intermediate concentration of NV centers OR Rubinas, VV Soshenko, SV Bolshedvorskii, AI Zeleneev, AS Galkin, ... Results in Physics 21, 103845, 2021 | 19 | 2021 |
| Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates AY Polyakov, VI Nikolaev, SA Tarelkin, AI Pechnikov, SI Stepanov, ... Journal of Applied Physics 129 (18), 2021 | 17 | 2021 |
| Diamond microstructuring by deep anisotropic reactive ion etching AV Golovanov, VS Bormashov, NV Luparev, SA Tarelkin, SY Troschiev, ... physica status solidi (a) 215 (22), 1800273, 2018 | 17 | 2018 |
| Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition IH Lee, AY Polyakov, NB Smirnov, EB Yakimov, SA Tarelkin, AV Turutin, ... Applied Physics Express 9 (6), 061002, 2016 | 15 | 2016 |
Alexander PolyakovNUST MISISVerified email at misis.ru
