Strain engineering of WS2, WSe2, and WTe2 B Amin, TP Kaloni, U Schwingenschlögl
RSC Advances 4 (65), 34561-34565, 2014
323 2014 Heterostructures of transition metal dichalcogenides B Amin, N Singh, U Schwingenschlögl
Physical review B 92 (7), 075439, 2015
222 2015 Ab initio study of the bandgap engineering of Al1− xGaxN for optoelectronic applications B Amin, I Ahmad, M Maqbool, S Goumri-Said, R Ahmad
Journal of Applied Physics 109 (2), 2011
181 2011 Layered graphene/GaS van der Waals heterostructure: Controlling the electronic properties and Schottky barrier by vertical strain CVN Khang D. Pham, Nguyen N. Hieu, Huynh V. Phuc, I. A. Fedorov, C. A. Duque ...
Applied Physics Letters 113 (17), 171605, 2018
180 2018 Rashba spin splitting and photocatalytic properties of GeC−MSSe (M= Mo, W) van der Waals heterostructures HU Din, M Idrees, A Albar, M Shafiq, I Ahmad, CV Nguyen, B Amin
Physical Review B 100 (16), 165425, 2019
153 2019 Optoelectronic and solar cell applications of Janus monolayers and their van der Waals heterostructures M Idrees, HU Din, R Ali, G Rehman, T Hussain, CV Nguyen, I Ahmad, ...
Physical Chemistry Chemical Physics 21 (34), 18612-18621, 2019
152 2019 Graphene/WSeTe van der Waals heterostructure: Controllable electronic properties and Schottky barrier via interlayer coupling and electric field TV Vu, NV Hieu, HV Phuc, NN Hieu, HD Bui, M Idrees, B Amin, ...
Applied Surface Science 507, 145036, 2020
144 2020 Investigation of structural and optoelectronic properties of BaThO3 G Murtaza, I Ahmad, B Amin, A Afaq, M Maqbool, J Maqssod, I Khan, ...
Optical Materials 33 (3), 553-557, 2011
138 2011 Interfacial characteristics, Schottky contact, and optical performance of a van der Waals heterostructure: Strain engineering and electric field tunability HTT Nguyen, MM Obeid, A Bafekry, M Idrees, TV Vu, HV Phuc, NN Hieu, ...
Physical Review B 102 (7), 075414, 2020
113 2020 Electronic structure, optical and photocatalytic performance of novel SiC-MX2 (M= Mo, W and X=S, Se) van der Waals heterostructures BA H. U-Din, M. Idrees, Gul Rehman, Chuong V. Nguyen, Li-Yong Gan, Iftikhar ...
Physical Chemistry Chemical Physics, 2018
84 2018 Materials properties of out-of-plane heterostructures of MoS2-WSe2 and WS2-MoSe2 B Amin, TP Kaloni, G Schreckenbach, MS Freund
Applied Physics Letters 108 (6), 063105, 2016
81 2016 Interlayer coupling and electric field controllable Schottky barriers and contact types in graphene/ heterostructures CV Nguyen, M Idrees, HV Phuc, NN Hieu, NTT Binh, B Amin, TV Vu
Physical Review B 101 (23), 235419, 2020
80 2020 Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field PTT Le, NN Hieu, LM Bui, HV Phuc, BD Hoi, B Amin, CV Nguyen
Physical Chemistry Chemical Physics 20 (44), 27856-27864, 2018
74 2018 Intriguing electronic structures and optical properties of two-dimensional van der Waals heterostructures of Zr2CT2 (T= O, F) with MoSe2 and WSe2 G Rehman, SA Khan, B Amin, I Ahmad, LY Gan, M Maqbool
Journal of Materials Chemistry C 6 (11), 2830-2839, 2018
74 2018 Electronic properties of WS2 and WSe2 monolayers with biaxial strain: a first-principles study D Muoi, NN Hieu, HTT Phung, HV Phuc, B Amin, BD Hoi, NV Hieu, ...
Chemical Physics 519, 69-73, 2019
72 2019 Opto-electronic response of spinels MgAl2O4 and MgGa2O4 through modified Becke-Johnson exchange potential B Amin, R Khenata, A Bouhemadou, I Ahmad, M Maqbool
Physica B: Condensed Matter 407 (13), 2588-2592, 2012
72 2012 Strain engineering of electronic structures and photocatalytic responses of MXenes functionalized by oxygen S. A. Khan, B. Amin, Li-Yong Gan, and Iftikhar Ahmad
Physical Chemistry Chemical Physics 19, 14738-14744, 2017
63 2017 Bandgap investigations and the effect of the In and Al concentration on the optical properties of Inx Al1−x N M Maqbool, B Amin, I Ahmad
JOSA B 26 (11), 2181-2184, 2009
62 2009 Cs 2 NaGaBr 6: a new lead-free and direct band gap halide double perovskite Y Saeed, B Amin, H Khalil, F Rehman, H Ali, MI Khan, A Mahmood, ...
RSC advances 10 (30), 17444-17451, 2020
61 * 2020 First principles study of the electronic properties and Schottky barrier in vertically stacked graphene on the Janus MoSeS under electric field Khang D. Pham, Nguyen N. Hieu, Huynh V. Phuc, Bui D. Hoi, Victor V. Ilysov ...
Computational Materials Science 153, 438-444, 2018
59 2018