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Suda Jun
Suda Jun
Nagoya University / Kyoto University
Verified email at nuee.nagoya-u.ac.jp - Homepage
Title
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Cited by
Year
Negative- System of Carbon Vacancy in -SiC
NT Son, XT Trinh, LS Løvlie, BG Svensson, K Kawahara, J Suda, ...
Physical review letters 109 (18), 187603, 2012
2912012
Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation
T Kimoto, K Danno, J Suda
physica status solidi (b) 245 (7), 1327-1336, 2008
1512008
Ultrahigh-voltage SiC pin diodes with improved forward characteristics
N Kaji, H Niwa, J Suda, T Kimoto
IEEE Transactions on Electron Devices 62 (2), 374-381, 2014
1462014
Nearly ideal current–voltage characteristics of Schottky barrier diodes formed on hydride-vapor-phase-epitaxy-grown GaN free-standing substrates
J Suda, K Yamaji, Y Hayashi, T Kimoto, K Shimoyama, H Namita, ...
Applied physics express 3 (10), 101003, 2010
1442010
Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing
H Sakurai, M Omori, S Yamada, Y Furukawa, H Suzuki, T Narita, ...
Applied Physics Letters 115 (14), 2019
1402019
Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping
G Feng, J Suda, T Kimoto
Applied Physics Letters 92 (22), 2008
1362008
21-kV SiC BJTs with space-modulated junction termination extension
H Miyake, T Okuda, H Niwa, T Kimoto, J Suda
IEEE Electron Device Letters 33 (11), 1598-1600, 2012
1292012
Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers
A Koizumi, J Suda, T Kimoto
Journal of Applied Physics 106 (1), 2009
1292009
Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride
H Kinoshita, S Otani, S Kamiyama, H Amano, I Akasaki, J Suda, ...
Japanese Journal of Applied Physics 40 (12A), L1280, 2001
1292001
Space-modulated junction termination extension for ultrahigh-voltage pin diodes in 4H-SiC
G Feng, J Suda, T Kimoto
IEEE transactions on electron devices 59 (2), 414-418, 2011
1192011
The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515° C
N Watanabe, T Kimoto, J Suda
Journal of Applied Physics 104 (10), 2008
1152008
Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes
T Hiyoshi, T Hori, J Suda, T Kimoto
IEEE Transactions on electron devices 55 (8), 1841-1846, 2008
1102008
Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations
M Horita, S Takashima, R Tanaka, H Matsuyama, K Ueno, M Edo, ...
Japanese Journal of Applied Physics 56 (3), 031001, 2017
1072017
Design and fabrication of GaN pn junction diodes with negative beveled-mesa termination
T Maeda, T Narita, H Ueda, M Kanechika, T Uesugi, T Kachi, T Kimoto, ...
IEEE Electron Device Letters 40 (6), 941-944, 2019
1022019
Impact ionization coefficients in 4H-SiC toward ultrahigh-voltage power devices
H Niwa, J Suda, T Kimoto
IEEE Transactions on Electron Devices 62 (10), 3326-3333, 2015
982015
Interface Properties of 4H-SiC () and () MOS Structures Annealed in NO
S Nakazawa, T Okuda, J Suda, T Nakamura, T Kimoto
IEEE Transactions on Electron Devices 62 (2), 309-315, 2014
982014
Analytical model for reduction of deep levels in SiC by thermal oxidation
K Kawahara, J Suda, T Kimoto
Journal of Applied Physics 111 (5), 2012
972012
Reduction in potential barrier height of AlGaN∕ GaN heterostructures by SiN passivation
N Onojima, M Higashiwaki, J Suda, T Kimoto, T Mimura, T Matsui
Journal of applied physics 101 (4), 2007
922007
Progress on and challenges of p-type formation for GaN power devices
T Narita, H Yoshida, K Tomita, K Kataoka, H Sakurai, M Horita, ...
Journal of Applied Physics 128 (9), 2020
892020
Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers
T Kimoto, T Hiyoshi, T Hayashi, J Suda
Journal of Applied Physics 108 (8), 2010
862010
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Articles 1–20