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Mikhail Mukhin
Mikhail Mukhin
HSE University Saint Petersburg
Verified email at hse.ru - Homepage
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Cited by
Year
Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si
AD Bolshakov, VV Fedorov, KY Shugurov, AM Mozharov, GA Sapunov, ...
Nanotechnology 30 (39), 395602, 2019
342019
Microlens-enhanced substrate patterning and MBE growth of GaP nanowires
AD Bolshakov, LN Dvoretckaia, VV Fedorov, GA Sapunov, AM Mozharov, ...
Semiconductors 52, 2088-2091, 2018
222018
Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures
YV Terent'ev, SN Danilov, J Loher, D Schuh, D Bougeard, D Weiss, ...
Applied Physics Letters 104 (10), 2014
162014
Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures
YV Terent'ev, MS Mukhin, AA Toropov, MO Nestoklon, BY Meltser, ...
Physical Review B 87 (4), 045315, 2013
122013
Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures
YV Terent’ev, C Zoth, VV Bel’kov, P Olbrich, C Drexler, V Lechner, P Lutz, ...
Applied Physics Letters 99 (7), 2011
72011
Spin injection in a heterovalent structure with coupled quantum wells GaAs/(Al, Ga) As/(Zn, Mn) Se/ZnSe
F Liaci, VK Kaibyshev, AA Toropov, YV Terent'ev, MS Mukhin, GV Klimko, ...
physica status solidi c 9 (8‐9), 1790-1792, 2012
62012
Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures
YV Terent’ev, MS Mukhin, VA Solov’ev, AN Semenov, BY Meltser, ...
Semiconductors 44, 1064-1069, 2010
52010
Study of electrical properties of single GaN nanowires grown by molecular beam epitaxy
AM Mozharov, FE Komissarenko, AA Vasiliev, AD Bolshakov, EI Moiseev, ...
Journal of Physics: Conference Series 741 (1), 012002, 2016
42016
Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix
M Mukhin, Y Terent'ev, L Golub, M Nestoklon, B Meltser, A Semenov, ...
Acta Physica Polonica A 120 (5), 868-869, 2011
22011
Elastic single-walled carbon nanotubes pixel matrix electrodes for flexible optoelectronics
S Mukhangali, V Neplokh, F Kochetkov, A Vorobyev, D Mitin, M Mukhin, ...
Applied Physics Letters 121 (24), 2022
12022
Application of planar materials obtained by photolithography containing equidistant ultramicroelectrodes for analyzing the properties of electroactive oligopeptides
AY Arbenin, AA Petrov, DV Nazarov, EB Serebryakov, SO Kirichenko, ...
Procedia Structural Integrity 50, 27-32, 2023
2023
Prospects of Application of Ultramicroelectrode Ensembles for Voltammetric Determination of Compounds with Close Standard Electrode Potentials and Different Diffusion Coefficients
AY Arbenin, AA Petrov, DV Nazarov, E Serebryakov, SO Kirichenko, ...
Chemosensors 10 (10), 433, 2022
2022
Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires
LN Dvoretckaia, VV Fedorov, GA Sapunov, AM Mozharov, KY Shugurov, ...
Semiconductors 52 (16), 2018
2018
GaN nanowires on Si (111) substrates via molecular beam epitaxy: growth, electronic and optical properties
AD Bolshakov, VV Fedorov, GA Sapunov, AM Mozharov, LN Dvoreckaia, ...
Journal of Physics: Conference Series 1092 (1), 012013, 2018
2018
Soviet aircraft industry of the 1940s and the first jets
M Mukhin
ROSSIISKAYA ISTORIYA, 44-55, 2016
2016
Data archive of Applied Physics Letters (APL) 104, 101111
YV Terent'ev, S Danilov, J Loher, D Schuh, D Bougeard, D Weiss, ...
2015
Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures
P Olbrich, C Zoth, C Drexler, V Lechner, P Lutz, SD Ganichev, ...
Verhandlungen der Deutschen Physikalischen Gesellschaft, 2012
2012
Electron Spin Alignment in InSb Type‐II Quantum Dots in an InAs Matrix
MS Mukhin, YV Terent'ev, LE Golub, MO Nestoklon, BY Meltser, ...
AIP Conference Proceedings 1416 (1), 34-37, 2011
2011
Excitation Power Control of Circular Polarization of Magneto‐Photoluminescence from InSb/InAs Quantum Dots
YV Terent'ev, MS Mukhin, AA Toropov, BY Meltser, AN Semenov, ...
AIP Conference Proceedings 1399 (1), 667-668, 2011
2011
GaN nanowires on Si (111) substrates via molecular beam epitaxy: growth, electronic and optical properties
GECISM A.D. Bolshakov, V.V. Fedorov, G.A. Sapunov, A.M. Mozharov, L.N ...
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