Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si AD Bolshakov, VV Fedorov, KY Shugurov, AM Mozharov, GA Sapunov, ... Nanotechnology 30 (39), 395602, 2019 | 34 | 2019 |
Microlens-enhanced substrate patterning and MBE growth of GaP nanowires AD Bolshakov, LN Dvoretckaia, VV Fedorov, GA Sapunov, AM Mozharov, ... Semiconductors 52, 2088-2091, 2018 | 22 | 2018 |
Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures YV Terent'ev, SN Danilov, J Loher, D Schuh, D Bougeard, D Weiss, ... Applied Physics Letters 104 (10), 2014 | 16 | 2014 |
Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures YV Terent'ev, MS Mukhin, AA Toropov, MO Nestoklon, BY Meltser, ... Physical Review B 87 (4), 045315, 2013 | 12 | 2013 |
Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures YV Terent’ev, C Zoth, VV Bel’kov, P Olbrich, C Drexler, V Lechner, P Lutz, ... Applied Physics Letters 99 (7), 2011 | 7 | 2011 |
Spin injection in a heterovalent structure with coupled quantum wells GaAs/(Al, Ga) As/(Zn, Mn) Se/ZnSe F Liaci, VK Kaibyshev, AA Toropov, YV Terent'ev, MS Mukhin, GV Klimko, ... physica status solidi c 9 (8‐9), 1790-1792, 2012 | 6 | 2012 |
Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures YV Terent’ev, MS Mukhin, VA Solov’ev, AN Semenov, BY Meltser, ... Semiconductors 44, 1064-1069, 2010 | 5 | 2010 |
Study of electrical properties of single GaN nanowires grown by molecular beam epitaxy AM Mozharov, FE Komissarenko, AA Vasiliev, AD Bolshakov, EI Moiseev, ... Journal of Physics: Conference Series 741 (1), 012002, 2016 | 4 | 2016 |
Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix M Mukhin, Y Terent'ev, L Golub, M Nestoklon, B Meltser, A Semenov, ... Acta Physica Polonica A 120 (5), 868-869, 2011 | 2 | 2011 |
Elastic single-walled carbon nanotubes pixel matrix electrodes for flexible optoelectronics S Mukhangali, V Neplokh, F Kochetkov, A Vorobyev, D Mitin, M Mukhin, ... Applied Physics Letters 121 (24), 2022 | 1 | 2022 |
Application of planar materials obtained by photolithography containing equidistant ultramicroelectrodes for analyzing the properties of electroactive oligopeptides AY Arbenin, AA Petrov, DV Nazarov, EB Serebryakov, SO Kirichenko, ... Procedia Structural Integrity 50, 27-32, 2023 | | 2023 |
Prospects of Application of Ultramicroelectrode Ensembles for Voltammetric Determination of Compounds with Close Standard Electrode Potentials and Different Diffusion Coefficients AY Arbenin, AA Petrov, DV Nazarov, E Serebryakov, SO Kirichenko, ... Chemosensors 10 (10), 433, 2022 | | 2022 |
Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires LN Dvoretckaia, VV Fedorov, GA Sapunov, AM Mozharov, KY Shugurov, ... Semiconductors 52 (16), 2018 | | 2018 |
GaN nanowires on Si (111) substrates via molecular beam epitaxy: growth, electronic and optical properties AD Bolshakov, VV Fedorov, GA Sapunov, AM Mozharov, LN Dvoreckaia, ... Journal of Physics: Conference Series 1092 (1), 012013, 2018 | | 2018 |
Soviet aircraft industry of the 1940s and the first jets M Mukhin ROSSIISKAYA ISTORIYA, 44-55, 2016 | | 2016 |
Data archive of Applied Physics Letters (APL) 104, 101111 YV Terent'ev, S Danilov, J Loher, D Schuh, D Bougeard, D Weiss, ... | | 2015 |
Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures P Olbrich, C Zoth, C Drexler, V Lechner, P Lutz, SD Ganichev, ... Verhandlungen der Deutschen Physikalischen Gesellschaft, 2012 | | 2012 |
Electron Spin Alignment in InSb Type‐II Quantum Dots in an InAs Matrix MS Mukhin, YV Terent'ev, LE Golub, MO Nestoklon, BY Meltser, ... AIP Conference Proceedings 1416 (1), 34-37, 2011 | | 2011 |
Excitation Power Control of Circular Polarization of Magneto‐Photoluminescence from InSb/InAs Quantum Dots YV Terent'ev, MS Mukhin, AA Toropov, BY Meltser, AN Semenov, ... AIP Conference Proceedings 1399 (1), 667-668, 2011 | | 2011 |
GaN nanowires on Si (111) substrates via molecular beam epitaxy: growth, electronic and optical properties GECISM A.D. Bolshakov, V.V. Fedorov, G.A. Sapunov, A.M. Mozharov, L.N ... | | |