| Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy W Metaferia, KL Schulte, J Simon, S Johnston, AJ Ptak Nature communications 10 (1), 3361, 2019 | 94 | 2019 |
| III–Vs on Si for photonic applications—A monolithic approach Z Wang, C Junesand, W Metaferia, C Hu, L Wosinski, S Lourdudoss Materials Science and Engineering: B 177 (17), 1551-1557, 2012 | 71 | 2012 |
| GaAsP nanowires grown by aerotaxy W Metaferia, AR Persson, K Mergenthaler, F Yang, W Zhang, A Yartsev, ... Nano Letters 16 (9), 5701-5707, 2016 | 53 | 2016 |
| Simple epitaxial lateral overgrowth process as a strategy for photonic integration on silicon H Kataria, W Metaferia, C Junesand, C Zhang, N Julian, JE Bowers, ... IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 380-386, 2013 | 41 | 2013 |
| Towards a monolithically integrated III–V laser on silicon: optimization of multi-quantum well growth on InP on Si H Kataria, C Junesand, Z Wang, W Metaferia, YT Sun, S Lourdudoss, ... Semiconductor science and technology 28 (9), 094008, 2013 | 35 | 2013 |
| Hot-carrier extraction in nanowire-nanoantenna photovoltaic devices IJ Chen, S Limpert, W Metaferia, C Thelander, L Samuelson, F Capasso, ... Nano Letters 20 (6), 4064-4072, 2020 | 32 | 2020 |
| Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth C Junesand, H Kataria, W Metaferia, N Julian, Z Wang, YT Sun, J Bowers, ... Optical Materials Express 3 (11), 1960-1973, 2013 | 32 | 2013 |
| n-type doping and morphology of GaAs nanowires in Aerotaxy W Metaferia, S Sivakumar, AR Persson, I Geijselaers, LR Wallenberg, ... Nanotechnology 29 (28), 285601, 2018 | 28 | 2018 |
| Advanced fabrication of single-mode and multi-wavelength MIR-QCLs MJ Süess, R Peretti, Y Liang, JM Wolf, C Bonzon, B Hinkov, S Nida, ... Photonics 3 (2), 26, 2016 | 25 | 2016 |
| Growth of InP directly on Si by corrugated epitaxial lateral overgrowth W Metaferia, H Kataria, YT Sun, S Lourdudoss Journal of Physics D: Applied Physics 48 (4), 045102, 2015 | 25 | 2015 |
| Growth of AlGaAs, AlInP, and AlGaInP by hydride vapor phase epitaxy KL Schulte, W Metaferia, J Simon, D Guiling, K Udwary, G Dodson, ... ACS Applied Energy Materials 2 (12), 8405-8410, 2019 | 24 | 2019 |
| Effect of the surface morphology of seed and mask layers on InP grown on Si by epitaxial lateral overgrowth C Junesand, C Hu, Z Wang, W Metaferia, P Dagur, G Pozina, L Hultman, ... Journal of electronic materials 41, 2345-2349, 2012 | 24 | 2012 |
| Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon W Metaferia, C Junesand, MH Gau, I Lo, G Pozina, L Hultman, ... Journal of crystal growth 332 (1), 27-33, 2011 | 23 | 2011 |
| Demonstration of a quick process to achieve buried heterostructure quantum cascade laser leading to high power and wall plug efficiency W Metaferia, B Simozrag, C Junesand, YT Sun, M Carras, R Blanchard, ... Optical Engineering 53 (8), 087104-087104, 2014 | 20 | 2014 |
| GaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas EL McClure, KL Schulte, J Simon, W Metaferia, AJ Ptak Applied Physics Letters 116 (18), 2020 | 19 | 2020 |
| Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth YT Sun, H Kataria, W Metaferia, S Lourdudoss CrystEngComm 16 (34), 7889-7893, 2014 | 19 | 2014 |
| Room temperature operation of a deep etched buried heterostructure photonic crystal quantum cascade laser R Peretti, V Liverini, MJ Süess, Y Liang, PB Vigneron, JM Wolf, C Bonzon, ... Laser & Photonics Reviews 10 (5), 843-848, 2016 | 14 | 2016 |
| Aerotaxy: gas-phase epitaxy of quasi 1D nanostructures S Sivakumar, AR Persson, W Metaferia, M Heurlin, R Wallenberg, ... Nanotechnology 32 (2), 025605, 2020 | 12 | 2020 |
| Hydride vapour phase epitaxy assisted buried heterostructure quantum cascade lasers for sensing applications S Lourdudoss, W Metaferia, C Junesand, B Manavaimaran, S Ferré, ... Quantum Sensing and Nanophotonic Devices XII 9370, 42-49, 2015 | 10 | 2015 |
| Uniformity of GaAs solar cells grown in a kinetically-limited regime by dynamic hydride vapor phase epitaxy KL Schulte, W Metaferia, J Simon, AJ Ptak Solar Energy Materials and Solar Cells 197, 84-92, 2019 | 7 | 2019 |
