| Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser LV Asryan, RA Suris Semiconductor Science and Technology 11 (4), 554, 1996 | 428 | 1996 |
| Tunneling-injection quantum-dot laser: ultrahigh temperature stability LV Asryan, S Luryi IEEE Journal of Quantum Electronics 37 (7), 905-910, 2001 | 155 | 2001 |
| Threshold characteristics of InGaAsP/InP multiple quantum well lasers LV Asryan, NA Gun'Ko, AS Polkovnikov, GG Zegrya, RA Suris, PK Lau, ... Semiconductor science and technology 15 (12), 1131, 2000 | 131 | 2000 |
| High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser MV Maximov, YM Shernyakov, AF Tsatsul’nikov, AV Lunev, AV Sakharov, ... Journal of applied physics 83 (10), 5561-5563, 1998 | 124 | 1998 |
| Temperature dependence of the threshold current density of a quantum dot laser LV Asryan, RA Suris IEEE Journal of quantum electronics 34 (5), 841-850, 1998 | 123 | 1998 |
| Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation MV Maximov, LV Asryan, YM Shernyakov, AF Tsatsul'Nikov, IN Kaiander, ... IEEE journal of quantum electronics 37 (5), 676-683, 2001 | 105 | 2001 |
| Charge neutrality violation in quantum-dot lasers LV Asryan, RA Suris IEEE Journal of Selected Topics in Quantum Electronics 3 (2), 148-157, 1997 | 105 | 1997 |
| Temperature-insensitive semiconductor quantum dot laser LV Asryan, S Luryi Solid-State Electronics 47 (2), 205-212, 2003 | 104 | 2003 |
| Internal efficiency of semiconductor lasers with a quantum-confined active region LV Asryan, S Luryi, RA Suris IEEE journal of quantum electronics 39 (3), 404-418, 2003 | 95 | 2003 |
| Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser LV Asryan, M Grundmann, NN Ledentsov, O Stier, RA Suris, D Bimberg Journal of Applied Physics 90 (3), 1666-1668, 2001 | 88 | 2001 |
| Effect of excited-state transitions on the threshold characteristics of a quantum dot laser LV Asryan, M Grundmann, NN Ledentsov, O Stier, RA Suris, D Bimberg IEEE journal of quantum electronics 37 (3), 418-425, 2001 | 80 | 2001 |
| Intrinsic nonlinearity of the light–current characteristic of semiconductor lasers with a quantum-confined active region LV Asryan, S Luryi, RA Suris Applied physics letters 81 (12), 2154-2156, 2002 | 73 | 2002 |
| Effect of internal optical loss on threshold characteristics of semiconductor lasers with a quantum-confined active region LV Asryan, S Luryi IEEE journal of quantum electronics 40 (7), 833-843, 2004 | 72 | 2004 |
| Semiconductor laser with reduced temperature sensitivity LV Asryan, S Luryi US Patent 6,870,178, 2005 | 67 | 2005 |
| Theory of threshold characteristics of semiconductor quantum dot lasers LV Asryan, RA Suris Semiconductors 38, 1-22, 2004 | 65 | 2004 |
| Longitudinal spatial hole burning in a quantum-dot laser LV Asryan, RA Suris IEEE journal of quantum electronics 36 (10), 1151-1160, 2000 | 59 | 2000 |
| Two lasing thresholds in semiconductor lasers with a quantum-confined active region LV Asryan, S Luryi Applied physics letters 83 (26), 5368-5370, 2003 | 53 | 2003 |
| Characteristic temperature of quantum dot laser LV Asryan, RA Suris Electronics Letters 33 (22), 1871-1872, 1997 | 52 | 1997 |
| Optical power of semiconductor lasers with a low-dimensional active region LV Asryan, ZN Sokolova Journal of Applied Physics 115 (2), 2014 | 50 | 2014 |
| Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers AE Zhukov, NV Kryzhanovskaya, FI Zubov, YM Shernyakov, MV Maximov, ... Applied Physics Letters 100 (2), 2012 | 48 | 2012 |
Robert SurisIoffe Institute at Russian Academy of SciencesПодтвержден адрес электронной почты в домене theory.ioffe.ru
