Huixia Fu
Huixia Fu
Подтвержден адрес электронной почты в домене
Ordered and reversible hydrogenation of silicene
J Qiu, H Fu, Y Xu, AI Oreshkin, T Shao, H Li, S Meng, L Chen, K Wu
Physical review letters 114 (12), 126101, 2015
From silicene to half-silicane by hydrogenation
J Qiu, H Fu, Y Xu, Q Zhou, S Meng, H Li, L Chen, K Wu
ACS nano 9 (11), 11192-11199, 2015
Stacking-dependent electronic structure of bilayer silicene
H Fu, J Zhang, Z Ding, H Li, S Meng
Applied Physics Letters 104 (13), 131904, 2014
Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se
C Chen, M Wang, J Wu, H Fu, H Yang, Z Tian, T Tu, H Peng, Y Sun, X Xu, ...
Science Advances 4 (9), eaat8355, 2018
Interlayer‐State‐Coupling Dependent Ultrafast Charge Transfer in MoS2/WS2 Bilayers
J Zhang, H Hong, C Lian, W Ma, X Xu, X Zhou, H Fu, K Liu, S Meng
Advanced science 4 (9), 1700086, 2017
Suppressed superconductivity in substrate-supported β 12 borophene by tensile strain and electron doping
C Cheng, JT Sun, H Liu, HX Fu, J Zhang, XR Chen, S Meng
2D Materials 4 (2), 025032, 2017
Intrinsic valley polarization of magnetic VSe2 monolayers
J Liu, WJ Hou, C Cheng, HX Fu, JT Sun, S Meng
Journal of Physics: Condensed Matter 29 (25), 255501, 2017
Self-modulation doping effect in the high-mobility layered semiconductor
H Fu, J Wu, H Peng, B Yan
Physical Review B 97 (24), 241203, 2018
Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se
J Wu, C Qiu, H Fu, S Chen, C Zhang, Z Dou, C Tan, T Tu, T Li, Y Zhang, ...
Nano Letters 19 (1), 197-202, 2018
Nonlinear Rashba spin splitting in transition metal dichalcogenide monolayers
C Cheng, JT Sun, XR Chen, HX Fu, S Meng
Nanoscale 8 (41), 17854-17860, 2016
New pathway for hot electron relaxation in two-dimensional heterostructures
J Zhang, H Hong, J Zhang, H Fu, P You, J Lischner, K Liu, E Kaxiras, ...
Nano letters 18 (9), 6057-6063, 2018
Multilayered silicene: the bottom-up approach for a weakly relaxed Si (111) with Dirac surface states
H Fu, L Chen, J Chen, J Qiu, Z Ding, J Zhang, K Wu, H Li, S Meng
Nanoscale 7 (38), 15880-15885, 2015
Observation of charge to spin conversion in Weyl semimetal at room temperature
B Zhao, D Khokhriakov, Y Zhang, H Fu, B Karpiak, AM Hoque, X Xu, ...
Physical Review Research 2 (1), 013286, 2020
Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers
L Kou, H Fu, Y Ma, B Yan, T Liao, A Du, C Chen
Physical Review B 97 (7), 075429, 2018
Magnetic Dirac fermions and Chern insulator supported on pristine silicon surface
H Fu, Z Liu, C Lian, J Zhang, H Li, JT Sun, S Meng
Physical Review B 94 (3), 035427, 2016
Exchange bias and quantum anomalous nomalous Hall effect in the MnBi2Te4/CrI3 heterostructure
H Fu, CX Liu, B Yan
Science Advances 6 (10), eaaz0948, 2020
Two-dimensional silicon-carbon hybrids with a honeycomb lattice: New family for two-dimensional photovoltaic materials
J Zhang, J Ren, HX Fu, ZJ Ding, H Li, S Meng
SCIENCE CHINA Physics, Mechanics & Astronomy 58 (10), 106801, 2015
Silicene: from monolayer to multilayer—A concise review
L Hui, HX Fu, M Sheng
Chinese Physics B 24 (8), 086102, 2015
Tuning magnetic splitting of zigzag graphene nanoribbons by edge functionalization with hydroxyl groups
H Zhang, S Meng, H Yang, L Li, H Fu, W Ma, C Niu, J Sun, C Gu
Journal of Applied Physics 117 (11), 113902, 2015
Finite-temperature violation of the anomalous transverse Wiedemann-Franz law
L Xu, X Li, X Lu, C Collignon, H Fu, J Koo, B Fauqué, B Yan, Z Zhu, ...
Science Advances 6 (17), eaaz3522, 2020
В данный момент система не может выполнить эту операцию. Повторите попытку позднее.
Статьи 1–20