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mourad baira
mourad baira
Université de Monastir
Подтвержден адрес электронной почты в домене isimm.rnu.tn - Главная страница
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Hydrostatic pressure and temperature effects on nonlinear optical rectification in a lens shape InAs/GaAs quantum dot
L Bouzaïene, RB Mahrsia, M Baira, L Sfaxi, H Maaref
Journal of luminescence 135, 271-275, 2013
472013
Investigation of the InAs/GaAs quantum dots’ size: dependence on the strain reducing layer’s position
M Souaf, M Baira, O Nasr, MH Hadj Alouane, H Maaref, L Sfaxi, B Ilahi
Materials 8 (8), 4699-4709, 2015
332015
Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0. 22Ga0. 78N/GaN heterostructures
I Jabbari, M Baira, H Maaref, R Mghaieth
Solid State Communications 314, 113920, 2020
202020
Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors
I Saidi, H Mejri, M Baira, H Maaref
Superlattices and Microstructures 84, 113-125, 2015
182015
Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure
H Khmissi, M Baira, L Sfaxi, L Bouzaïene, F Saidi, C Bru-Chevallier, ...
Journal of Applied Physics 109 (5), 054316, 2011
132011
Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots
L Bouzaïene, L Sfaxi, M Baira, H Maaref, C Bru-Chevallier
Journal of Nanoparticle Research 13 (1), 257-262, 2011
132011
Linear and nonlinear intersubband optical properties of direct band gap GeSn quantum dots
M Baira, B Salem, NA Madhar, B Ilahi
Nanomaterials 9 (1), 124, 2019
122019
Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule
M Baira, L Sfaxi, L Bouzaiene, H Maaref, N Chauvin, C Bru-Chevallier
Journal of Applied Physics 104 (6), 064314, 2008
122008
Toward long wavelength low density InAs/GaAs quantum dots
B Ilahi, L Sfaxi, E Tranvouez, G Brémond, M Baïra, C Bru-Chevalier, ...
Physics Letters A 357 (4-5), 360-363, 2006
122006
Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots
M Baira, L Bouzaïene, L Sfaxi, H Maaref, O Marty, C Bru-Chevallier
Journal of Applied Physics 105 (9), 094322, 2009
112009
Correlation between Kink effect and trapping mechanism through H1 hole trap in Al0.22Ga0.78N/GaN/SiC HEMTs by current DLTS: field effect enhancement
I Jabbari, M Baira, H Maaref
Applied Physics A 126, 1-11, 2020
102020
C-DLTS interface defects in Al0. 22Ga0. 78N/GaN HEMTs on SiC: Spatial location of E2 traps
I Jabbari, M Baira, H Maaref, R Mghaieth
Physica E: Low-dimensional Systems and Nanostructures 104, 216-222, 2018
102018
Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices
M Baira, B Salem, NA Madhar, B Ilahi
Superlattices and Microstructures 117, 31-35, 2018
92018
Evolution of InAs/GaAs QDs size with the growth rate: a numerical investigation
B Ilahi, M Souaf, M Baira, J Alrashdi, L Sfaxi, A Alhazaa, H Maaref
Journal of Nanomaterials 16 (1), 287-287, 2015
92015
Design of strain-engineered GeSn/GeSiSn quantum dots for mid-IR direct bandgap emission on Si substrate
R Al-Saigh, M Baira, B Salem, B Ilahi
Nanoscale Research Letters 13, 1-5, 2018
82018
Effective generation lifetime depth profile in InAs quantum dots grown on InAlAs/InP (0 0 1)
R Ajjel, M Baira, H Maaref, B Salem, G Bremond, M Gendry
Semiconductor science and technology 20 (6), 514, 2005
72005
Schottky barrier inhomogeneity in (Pd/Au) Al0. 22 Ga0. 78N/GaN/SiC HEMT: Triple Gaussian distributions
I Jabbari, M Baira, H Maaref, R Mghaieth
Chinese Journal of Physics 73, 719-731, 2021
62021
Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection model
S Ilahi, M Baira, F Saidi, N Yacoubi, L Auvray, H Maaref
Journal of alloys and compounds 581, 358-362, 2013
62013
Capacitance–voltage analysis of InAs quantum dots grown on InAlAs/InP (0 0 1)
O Saad, M Baira, R Ajjel, H Maaref, B Salem, G Brémond, M Gendry
Microelectronics journal 39 (1), 7-11, 2008
62008
Cryogenic investigation of the negative pinch-off voltage Vpinch-off, leakage current and interface defects in the Al0. 22Ga0. 78N/GaN/SiC HEMT
I Jabbari, M Baira, H Maaref, R Mghaieth
Microelectronics Reliability 116, 114009, 2021
52021
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