| Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field VA Shalygin, LE Vorobjev, DA Firsov, AN Sofronov, GA Melentyev, ... Journal of Applied Physics 109 (7), 073108, 2011 | 43 | 2011 |
| Impurity breakdown and terahertz luminescence in epilayers under external electric field VA Shalygin, LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, ... Journal of applied physics 106 (12), 123523, 2009 | 39 | 2009 |
| Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation GA Melentev, VA Shalygin, LE Vorobjev, VY Panevin, DA Firsov, ... Journal of Applied Physics 119 (9), 093104, 2016 | 38 | 2016 |
| Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels VF Agekyan, EV Borisov, LE Vorobjev, GA Melentyev, H Nykänen, ... Physics of the Solid State 57, 787-793, 2015 | 14 | 2015 |
| Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states. D Firsov, V Shalygin, V Panevin, G Melentyev, A Sofronov, L Vorobjev, ... Semiconductors 44 (11), 2010 | 14 | 2010 |
| Interaction of surface plasmon–phonon polaritons with terahertz radiation in heavily doped GaAs epilayers VA Shalygin, MD Moldavskaya, VY Panevin, AI Galimov, GA Melentev, ... Journal of Physics: Condensed Matter 31 (10), 105002, 2019 | 12 | 2019 |
| Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers. V Agekyan, L Vorob'ev, G Melentyev, H Nykänen, A Serov, S Suihkonen, ... Physics of the Solid State 55 (2), 2013 | 12 | 2013 |
| Surface plasmon-phonon polaritons in GaAs GA Melentev, VA Shalygin, DA Firsov, MY Vinnichenko, LE Vorobjev Journal of Physics: Conference Series 917 (6), 062038, 2017 | 9 | 2017 |
| Plasmon phonon modes and optical resonances in n-GaN GA Melentev, DY Yaichnikov, VA Shalygin, MY Vinnichenko, LE Vorobjev, ... Journal of Physics: Conference Series 690 (1), 012005, 2016 | 8 | 2016 |
| Bulk plasmon-phonon polaritons in n-GaN EY Orlov, GA Melentev, VA Shalygin, S Suihkonen Journal of Physics: Conference Series 816 (1), 012004, 2017 | 7 | 2017 |
| Optical properties of GaN/AlGaN nanostructures in the terahertz frequency range AI Galimov, VA Shalygin, MD Moldavskaya, GA Melentev, ... Journal of Physics: Conference Series 816 (1), 012019, 2017 | 6 | 2017 |
| Terahertz radiation emission by hot electrons from AlGaN/GaN heterostructure V Shalygin, L Vorobjev, D Firsov, A Sofronov, G Melentyev, W Lundin, ... Acta Physica Polonica A 119 (2), 241-243, 2011 | 5 | 2011 |
| Experimental study of surface plasmon-phonon polaritons in GaAs-based microstructures AI Galimov, VA Shalygin, MD Moldavskaya, VY Panevin, GA Melentyev, ... Journal of Physics: Conference Series 993 (1), 012012, 2018 | 4 | 2018 |
| Two-dimensional plasmons in a GaN/AlGaN heterojunction MY Vinnichenko, VA Shalygin, MD Moldavskaya, AA Artemyev, ... Journal of Physics: Conference Series 1199 (1), 012014, 2019 | 3 | 2019 |
| Excitation and decay of surface plasmon polaritons in n-GaN VA Shalygin, GA Melentev, LE Vorobjev, VY Panevin, DA Firsov, ... Journal of Physics: Conference Series 864 (1), 012073, 2017 | 3 | 2017 |
| Emission of terahertz radiation from GaN under impact ionization of donors in an electric field VA Shalygin, LE Vorob’ev, DA Firsov, VY Panevin, AN Sofronov, ... Bulletin of the Russian Academy of Sciences: Physics 74, 86-88, 2010 | 3 | 2010 |
| Terahertz reflection and emission associated with nonequilibrium surface plasmon polaritons in n-GaN GA Melentyev, VA Shalygin, MD Moldavskaya, VY Panevin, LE Vorobjev, ... Journal of Physics: Conference Series 586 (1), 012005, 2015 | 2 | 2015 |
| Emission of terahertz radiation from GaN/AlGaN heterostructure under electron heating in lateral electric field VA Shalygin, LE Vorobjev, DA Firsov, AN Sofronov, GA Melentyev, ... AIP Conference Proceedings 1566 (1), 449-450, 2013 | 2 | 2013 |
| Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field VA Shalygin, LE Vorobjev, DA Firsov, AN Sofronov, GA Melentyev, ... Bulletin of the Russian Academy of Sciences: Physics 76, 207-210, 2012 | 1 | 2012 |
| Influence of Auger recombination on the lifetime of nonequilibrium carriers in InGaAsSb/AlGaAsSb quantum well structures LE Vorobjev, DA Firsov, MY Vinnichenko, VL Zerova, GA Melentyev, ... Bulletin of the Russian Academy of Sciences: Physics 76, 211-213, 2012 | 1 | 2012 |
Vadim A. Shalygin (Øàëûãèí Â.À.)Peter the Great St.Petersburg Polytechnic University (SPbPU)Verified email at rphf.spbstu.ru
