| Activation energy in low compensated homoepitaxial boron-doped diamond films JP Lagrange, A Deneuville, E Gheeraert Diamond and Related Materials 7 (9), 1390-1393, 1998 | 258 | 1998 |
| Dependence of the Superconducting Transition Temperature on the Doping Level<? format?> in Single-Crystalline Diamond Films E Bustarret, J Kačmarčik, C Marcenat, E Gheeraert, C Cytermann, ... Physical review letters 93 (23), 237005, 2004 | 246 | 2004 |
| Characterization of heavily B‐doped polycrystalline diamond films using Raman spectroscopy and electron spin resonance P Gonon, E Gheeraert, A Deneuville, F Fontaine, L Abello, G Lucazeau Journal of applied physics 78 (12), 7059-7062, 1995 | 180 | 1995 |
| Zr/oxidized diamond interface for high power Schottky diodes A Traoré, P Muret, A Fiori, D Eon, E Gheeraert, J Pernot Applied Physics Letters 104 (5), 2014 | 179 | 2014 |
| Hydrogen-boron interactions in p-type diamond J Chevallier, B Theys, A Lusson, C Grattepain, A Deneuville, E Gheeraert Physical Review B 58 (12), 7966, 1998 | 156 | 1998 |
| Optical and electronic properties of heavily boron‐doped homo‐epitaxial diamond E Bustarret, E Gheeraert, K Watanabe physica status solidi (a) 199 (1), 9-18, 2003 | 125 | 2003 |
| Effect of boron incorporation on the “quality” of MPCVD diamond films E Gheeraert, P Gonon, A Deneuville, L Abello, G Lucazeau Diamond and Related Materials 2 (5-7), 742-745, 1993 | 124 | 1993 |
| Electronic states of boron and phosphorus in diamond E Gheeraert, S Koizumi, T Teraji, H Kanda, M Nesládek physica status solidi (a) 174 (1), 39-51, 1999 | 106 | 1999 |
| Review of the development of diamond radiation sensors W Adam, C Bauer, E Berdermann, P Bergonzo, F Bogani, E Borchi, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1999 | 100* | 1999 |
| Electronic transitions of electrons bound to phosphorus donors in diamond E Gheeraert, S Koizumi, T Teraji, H Kanda Solid state communications 113 (10), 577-580, 2000 | 99 | 2000 |
| Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC D Meier, W Adam, C Bauer, E Berdermann, P Bergonzo, F Bogani, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1999 | 96 | 1999 |
| Electrical conduction and deep levels in polycrystalline diamond films P Gonon, A Deneuville, F Fontaine, E Gheeraert Journal of applied physics 78 (11), 6633-6638, 1995 | 94 | 1995 |
| Hall electron mobility in diamond J Pernot, C Tavares, E Gheeraert, E Bustarret, M Katagiri, S Koizumi Applied physics letters 89 (12), 2006 | 92 | 2006 |
| A large range of boron doping with low compensation ratio for homoepitaxial diamond films JP Lagrange, A Deneuville, E Gheeraert Carbon 37 (5), 807-810, 1999 | 88 | 1999 |
| n-Type doping of diamond by sulfur and phosphorus E Gheeraert, N Casanova, A Tajani, A Deneuville, E Bustarret, JA Garrido, ... Diamond and related materials 11 (3-6), 289-295, 2002 | 80 | 2002 |
| Electronic states of phosphorus in diamond E Gheeraert, S Koizumi, T Teraji, H Kanda, M Nesladek Diamond and Related Materials 9 (3-6), 948-951, 2000 | 80 | 2000 |
| Nitrogen doping of diamond by ion implantation R Kalish, C Uzan-Saguy, B Philosoph, V Richter, JP Lagrange, ... Diamond and Related Materials 6 (2-4), 516-520, 1997 | 73 | 1997 |
| Defects and stress analysis of the Raman spectrum of diamond films E Gheeraert, A Deneuville, AM Bonnot, L Abello Diamond and Related Materials 1 (5-6), 525-528, 1992 | 72 | 1992 |
| Etching mechanism of diamond by Ni nanoparticles for fabrication of nanopores JC Arnault, D Eon, C Hébert, D Carole, F Omnes, E Gheeraert Carbon 59, 448-456, 2013 | 70 | 2013 |
| Metal oxide semiconductor structure using oxygen-terminated diamond G Chicot, A Maréchal, R Motte, P Muret, E Gheeraert, J Pernot Applied Physics Letters 102 (24), 2013 | 69 | 2013 |
