Alexey Mikhaylov
Alexey Mikhaylov
Lobachevsky University
Подтвержден адрес электронной почты в домене
Bipolar resistive switching and charge transport in silicon oxide memristor
AN Mikhaylov, AI Belov, DV Guseinov, DS Korolev, IN Antonov, ...
Materials Science and Engineering: B 194, 48-54, 2015
Influence of the nature of oxide matrix on the photoluminescence spectrum of ion-synthesized silicon nanostructures
DI Tetelbaum, ON Gorshkov, AV Ershov, AP Kasatkin, VA Kamin, ...
Thin Solid Films 515 (1), 333-337, 2006
Field‐and irradiation‐induced phenomena in memristive nanomaterials
AN Mikhaylov, EG Gryaznov, AI Belov, DS Korolev, AN Sharapov, ...
physica status solidi (c) 13 (10‐12), 870-881, 2016
Effect of ion doping with donor and acceptor impurities on intensity and lifetime of photoluminescence from SiO2 films with silicon quantum dots
AN Mikhaylov, DI Tetelbaum, VA Burdov, ON Gorshkov, AI Belov, ...
Journal of nanoscience and nanotechnology 8 (2), 780-788, 2008
Resistive switching in metal-insulator-metal structures based on germanium oxide and stabilized zirconia
ON Gorshkov, IN Antonov, AI Belov, AP Kasatkin, AN Mikhaylov
Technical Physics Letters 40 (2), 101-103, 2014
Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO x /ZrO2 system containing Si nanoclusters
AV Ershov, DI Tetelbaum, IA Chugrov, AI Mashin, AN Mikhaylov, ...
Semiconductors 45 (6), 731, 2011
Peculiarities of the formation and properties of light-emitting structures based on ion-synthesized silicon nanocrystals in SiO2 and Al2O3 matrices
AN Mikhaylov, AI Belov, AB Kostyuk, IY Zhavoronkov, DS Korolev, ...
Physics of the Solid State 54 (2), 368-382, 2012
Effect of carbon implantation on visible luminescence and composition of Si-implanted SiO2 layers
DI Tetelbaum, AN Mikhaylov, VK Vasiliev, AI Belov, AI Kovalev, ...
Surface and Coatings Technology 203 (17-18), 2658-2663, 2009
Properties of Al2O3: nc-Si nanostructures formed by implantation of silicon ions into sapphire and amorphous films of aluminum oxide
DI Tetelbaum, AN Mikhaylov, AI Belov, AV Ershov, EA Pitirimova, ...
Physics of the Solid State 51 (2), 409-416, 2009
Improvement of the photon generation efficiency in phosphorus-doped silicon nanocrystals: Γ–X mixing of the confined electron states
VA Belyakov, AI Belov, AN Mikhaylov, DI Tetelbaum, VA Burdov
Journal of Physics: Condensed Matter 21 (4), 045803, 2009
Ion beam synthesis of Si nanocrystals in silicon dioxide and sapphire matrices—the photoluminescence study
DI Tetelbaum, AN Mikhaylov, ON Gorshkov, AP Kasatkin, AI Belov, ...
Vacuum 78 (2-4), 519-524, 2005
Formation of weighting coefficients in an artificial neural network based on the memristive effect in metal–oxide–metal nanostructures
IN Antonov, AI Belov, AN Mikhaylov, OA Morozov, PE Ovchinnikov
Journal of Communications Technology and Electronics 63 (8), 950-957, 2018
Formation and “white” photoluminescence of nanoclusters in SiO x films implanted with carbon ions
AI Belov, AN Mikhaylov, DE Nikolitchev, AV Boryakov, AP Sidorin, ...
Semiconductors 44 (11), 1450-1456, 2010
Effect of coalescence and of the character of the initial oxide on the photoluminescence of ion-synthesized Si nanocrystals in SiO2
DI Tetelbaum, ON Gorshkov, AP Kasatkin, AN Mikhaylov, AI Belov, ...
Physics of the Solid State 47 (1), 13-17, 2005
The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2: nc-Si system
DI Tetelbaum, ON Gorshkov, VA Burdov, SA Trushin, AN Mikhaylov, ...
Physics of the Solid State 46 (1), 17-21, 2004
The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2: Si nanosystem at additional phosphorus implantation
DI Tetelbaum, SA Trushin, AN Mikhaylov, VK Vasil'ev, GA Kachurin, ...
Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 410-413, 2003
Ion-beam simulation of radiation damage produced by fast neutrons in heterophase structures
DI Tetelbaum, DV Guseinov, VK Vasiliev, AN Mikhaylov, AI Belov, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014
Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation
AV Boryakov, DE Nikolitchev, DI Tetelbaum, AI Belov, AV Ershov, ...
Physics of the Solid State 54 (2), 394-403, 2012
Mechanism of quantum dot luminescence excitation within implanted SiO2: Si: C films
AF Zatsepin, EA Buntov, VS Kortov, DI Tetelbaum, AN Mikhaylov, AI Belov
Journal of Physics: Condensed Matter 24 (4), 045301, 2012
Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications
AV Emelyanov, KE Nikiruy, VA Demin, VV Rylkov, AI Belov, DS Korolev, ...
Microelectronic Engineering 215, 110988, 2019
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