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Tsuyoshi Horikawa
Tsuyoshi Horikawa
Tokyo Institue of Technology
Подтвержден адрес электронной почты в домене opto.ee.e.titech.ac.jp
Название
Процитировано
Процитировано
Год
Dielectric properties of (Ba, Sr) TiO3 thin films deposited by RF sputtering
T Horikawa, N Mikami, T Makita, J Tanimura, M Kataoka, KSK Sato, ...
Japanese Journal of Applied Physics 32 (9S), 4126, 1993
3251993
50-Gb/s ring-resonator-based silicon modulator
T Baba, S Akiyama, M Imai, N Hirayama, H Takahashi, Y Noguchi, ...
Optics express 21 (10), 11869-11876, 2013
2312013
Dielectric properties of (BaxSr1-x) TiO3 thin films prepared by RF sputtering for dynamic random access memory application
T Kuroiwa, Y Tsunemine, T Horikawa, T Makita, J Tanimura, NMN Mikami, ...
Japanese journal of applied physics 33 (9S), 5187, 1994
1551994
First demonstration of high density optical interconnects integrated with lasers, optical modulators, and photodetectors on single silicon substrate
Y Urino, T Shimizu, M Okano, N Hatori, M Ishizaka, T Yamamoto, T Baba, ...
Optics express 19 (26), B159-B165, 2011
1282011
Semiconductor device and manufacturing method thereof
T Horikawa
US Patent 6,563,182, 2003
1242003
Dielectric relaxation of (Ba, Sr) TiO3 thin films
T Horikawa, T Makita, T Kuroiwa, NMN Mikami
Japanese journal of applied physics 34 (9S), 5478, 1995
1201995
Comparative studies on oxygen diffusion coefficients for amorphous and γ-Al2O3 films using 18O isotope
T Nabatame, T Yasuda, M Nishizawa, M Ikeda, T Horikawa, A Toriumi
Japanese journal of applied physics 42 (12R), 7205, 2003
1062003
Low-loss silicon wire waveguides for optical integrated circuits
T Horikawa, D Shimura, T Mogami
MRS Communications 6 (1), 9-15, 2016
952016
12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode
S Akiyama, T Baba, M Imai, T Akagawa, M Takahashi, N Hirayama, ...
Optics express 20 (3), 2911-2923, 2012
942012
A newly designed planar stacked capacitor cell with high dielectric constant film for 256 Mbit DRAM
T Eimori, Y Ohno, H Kimura, J Matsufusa, S Kishimura, A Yoshida, ...
Proceedings of IEEE International Electron Devices Meeting, 631-634, 1993
911993
Thermal stability of a thin HfO2/ultrathin SiO2/Si structure: interfacial Si oxidation and silicidation
N Miyata, M Ichikawa, T Nabatame, T Horikawa, A Toriumi
Japanese journal of applied physics 42 (2B), L138, 2003
892003
A 300-mm silicon photonics platform for large-scale device integration
T Horikawa, D Shimura, H Okayama, SH Jeong, H Takahashi, J Ushida, ...
IEEE Journal of Selected Topics in Quantum Electronics 24 (4), 1-15, 2018
842018
Graph-theoretical formula for ring currents induced in a polycyclic conjugated system
J Aihara, T Horikawa
Bulletin of the Chemical Society of Japan 56 (6), 1853-1854, 1983
841983
Demonstration of 12.5-Gbps optical interconnects integrated with lasers, optical splitters, optical modulators and photodetectors on a single silicon substrate
Y Urino, Y Noguchi, M Noguchi, M Imai, M Yamagishi, S Saitou, ...
Optics express 20 (26), B256-B263, 2012
772012
Compact PIN-diode-based silicon modulator using side-wall-grating waveguide
S Akiyama, M Imai, T Baba, T Akagawa, N Hirayama, Y Noguchi, M Seki, ...
IEEE Journal of Selected Topics in Quantum Electronics 19 (6), 74-84, 2013
752013
Novel stacked capacitor technology for 1 Gbit DRAMs with CVD-(Ba, Sr) TiO/sub 3/thin films on a thick storage node of Ru
A Yuuki, M Yamamuka, T Makita, T Horikawa, T Shibano, N Hirano, ...
Proceedings of International Electron Devices Meeting, 115-118, 1995
731995
Low-loss, flat-topped and spectrally uniform silicon-nanowire-based 5th-order CROW fabricated by ArF-immersion lithography process on a 300-mm SOI wafer
SH Jeong, D Shimura, T Simoyama, M Seki, N Yokoyama, M Ohtsuka, ...
Optics express 21 (25), 30163-30174, 2013
672013
First demonstration of athermal silicon optical interposers with quantum dot lasers operating up to 125 C
Y Urino, N Hatori, K Mizutani, T Usuki, J Fujikata, K Yamada, T Horikawa, ...
Journal of Lightwave Technology 33 (6), 1223-1229, 2014
662014
Si-nanowire-based multistage delayed Mach–Zehnder interferometer optical MUX/DeMUX fabricated by an ArF-immersion lithography process on a 300 mm SOI wafer
SH Jeong, D Shimura, T Simoyama, T Horikawa, Y Tanaka, K Morito
Optics letters 39 (13), 3702-3705, 2014
602014
High-density and wide-bandwidth optical interconnects with silicon optical interposers
Y Urino, T Usuki, J Fujikata, M Ishizaka, K Yamada, T Horikawa, ...
Photonics Research 2 (3), A1-A7, 2014
552014
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