James Jeremy MacDonald Law
James Jeremy MacDonald Law
Подтвержден адрес электронной почты в домене gener8.net
Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
V Chobpattana, J Son, JJM Law, R Engel-Herbert, CY Huang, S Stemmer
Applied Physics Letters 102 (2), 2013
Al2O3 growth on (100) In0. 53Ga0. 47As initiated by cyclic trimethylaluminum and hydrogen plasma exposures
AD Carter, WJ Mitchell, BJ Thibeault, JJM Law, MJW Rodwell
Applied physics express 4 (9), 091102, 2011
High performance raised source/drain InAs/In0. 53Ga0. 47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer
S Lee, CY Huang, D Cohen-Elias, JJM Law, V Chobpattanna, S Krämer, ...
Applied Physics Letters 103 (23), 2013
Influence of gate metallization processes on the electrical characteristics of high-k/In0. 53Ga0. 47As interfaces
GJ Burek, Y Hwang, AD Carter, V Chobpattana, JJM Law, WJ Mitchell, ...
Journal of Vacuum Science & Technology B 29 (4), 2011
III–V FET channel designs for high current densities and thin inversion layers
M Rodwell, W Frensley, S Steiger, E Chagarov, S Lee, H Ryu, Y Tan, ...
68th Device Research Conference, 149-152, 2010
Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy
JJM Law, ET Yu, G Koblmüller, F Wu, JS Speck
Applied Physics Letters 96 (10), 2010
Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed-L Valleys
SR Mehrotra, M Povolotskyi, DC Elias, T Kubis, JJM Law, MJW Rodwell, ...
IEEE electron device letters 34 (9), 1196-1198, 2013
Record extrinsic transconductance (2.45 mS/µm at VDS= 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth
S Lee, CY Huang, AD Carter, DC Elias, JJM Law, V Chobpattana, ...
2013 Symposium on VLSI Technology, T246-T247, 2013
III-V MOSFETs: Scaling laws, scaling limits, fabrication processes
MJW Rodwell, U Singisetti, M Wistey, GJ Burek, A Carter, A Baraskar, ...
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching
S Lee, CY Huang, AD Carter, JJM Law, DC Elias, V Chobpattana, ...
2013 International Conference on Indium Phosphide and Related Materials …, 2013
Co-doping of InxGa1− xAs with silicon and tellurium for improved ultra-low contact resistance
JJM Law, AD Carter, S Lee, CY Huang, H Lu, MJW Rodwell, AC Gossard
Journal of crystal growth 378, 92-95, 2013
Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy
JJM Law, ET Yu, BA Haskell, PT Fini, S Nakamura, JS Speck, ...
Journal of Applied Physics 103 (1), 2008
Reduction of leakage current in In0. 53Ga0. 47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0. 56Sb0. 44 confinement layers
CY Huang, S Lee, D Cohen-Elias, JJM Law, AD Carter, V Chobpattana, ...
Applied Physics Letters 103 (20), 2013
IEDM Tech. Dig.
KK Young
IEDM Tech. Dig, 563, 2000
Two dimensional electron transport in modulation-doped In0. 53Ga0. 47As/AlAs0. 56Sb0. 44 ultrathin quantum wells
CY Huang, JJM Law, H Lu, D Jena, MJW Rodwell, AC Gossard
Journal of Applied Physics 115 (12), 2014
Formation of sub-10 nm width InGaAs finFETs of 200 nm height by atomic layer epitaxy
D Cohen-Elias, JJM Law, HW Chiang, A Sivananthan, C Zhang, ...
71st Device Research Conference, 1-2, 2013
Scanning capacitance characterization of potential screening in InAs nanowire devices
JJM Law, SA Dayeh, D Wang, ET Yu
Journal of Applied Physics 105 (1), 2009
Design of high-current L-valley GaAs=AlAs0.56Sb0.44/InP (111) ultra-thin-body nMOSFETs
S Mehrotra, M Povolotskyi, J Law, T Kubis, G Klimeck, M Rodwell
2012 International Conference on Indium Phosphide and Related Materials, 151-154, 2012
Influence of InP source/drain layers upon the DC characteristics of InAs/InGaAs MOSFETs
CY Huang, S Lee, DC Elias, JJM Law, V Chobpattana, S Stemmer, ...
72nd Device Research Conference, 225-226, 2014
Substitutional-gate MOSFETs with composite (In0. 53Ga0. 47As/InAs/In0. 53Ga0. 47As) channels and self-aligned MBE source–drain regrowth
L Sanghoon, JJM Law, AD Carter, BJ Thibeault, W Mitchell, ...
IEEE Electron Device Lett 33 (11), 1553-1555, 2012
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