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Tongtong Zhu
Tongtong Zhu
University of Cambridge
Подтвержден адрес электронной почты в домене cam.ac.uk - Главная страница
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Процитировано
Процитировано
Год
Microstructural origins of localization in InGaN quantum wells
RA Oliver, SE Bennett, T Zhu, DJ Beesley, MJ Kappers, DW Saxey, ...
Journal of Physics D: Applied Physics 43 (35), 354003, 2010
1142010
Unintentional doping in GaN
T Zhu, RA Oliver
Physical Chemistry Chemical Physics 14 (27), 9558-9573, 2012
892012
Low threshold, room-temperature microdisk lasers in the blue spectral range
I Aharonovich, A Woolf, KJ Russell, T Zhu, N Niu, MJ Kappers, RA Oliver, ...
Applied Physics Letters 103 (2), 2013
832013
Functional conductive nanomaterials via polymerisation in nano-channels: PEDOT in a MOF
T Wang, M Farajollahi, S Henke, T Zhu, SR Bajpe, S Sun, JS Barnard, ...
Materials Horizons 4 (1), 64-71, 2017
792017
Wafer-scale fabrication of non-polar mesoporous GaN distributed Bragg reflectors via electrochemical porosification
T Zhu, Y Liu, T Ding, WY Fu, J Jarman, CX Ren, RV Kumar, RA Oliver
Scientific reports 7 (1), 1-8, 2017
732017
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ...
Applied Physics Letters 106 (7), 2015
622015
Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures
TJ Badcock, M Ali, T Zhu, M Pristovsek, RA Oliver, AJ Shields
Applied Physics Letters 109 (15), 2016
572016
Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
T Zhu, F Oehler, BPL Reid, RM Emery, RA Taylor, MJ Kappers, RA Oliver
Applied Physics Letters 102 (25), 2013
532013
Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
F Oehler, T Zhu, S Rhode, MJ Kappers, CJ Humphreys, RA Oliver
Journal of crystal growth 383, 12-18, 2013
492013
Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities
A Woolf, T Puchtler, I Aharonovich, T Zhu, N Niu, D Wang, R Oliver, EL Hu
Proceedings of the National Academy of Sciences 111 (39), 14042-14046, 2014
472014
Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires
TJ Puchtler, T Wang, CX Ren, F Tang, RA Oliver, RA Taylor, T Zhu
arXiv preprint arXiv:1609.07973, 2016
442016
Ultra-low-threshold InGaN/GaN quantum dot micro-ring lasers
D Wang, T Zhu, RA Oliver, EL Hu
Optics letters 43 (4), 799-802, 2018
432018
Effect of threading dislocations on the quality factor of InGaN/GaN microdisk cavities
TJ Puchtler, A Woolf, T Zhu, D Gachet, EL Hu, RA Oliver
ACS photonics 2 (1), 137-143, 2015
412015
Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
FCP Massabuau, L Trinh-Xuan, D Lodié, EJ Thrush, D Zhu, F Oehler, ...
Journal of Applied Physics 113 (7), 2013
402013
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, ...
Ultramicroscopy 176, 93-98, 2017
392017
Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots
T Wang, TJ Puchtler, T Zhu, JC Jarman, LP Nuttall, RA Oliver, RA Taylor
Nanoscale 9 (27), 9421-9427, 2017
392017
Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching
FCP Massabuau, PH Griffin, HP Springbett, Y Liu, RV Kumar, T Zhu, ...
APL Materials 8 (3), 2020
362020
Microstructural, optical, and electrical characterization of semipolar (112 2) gallium nitride grown by epitaxial lateral overgrowth
T Zhu, CF Johnston, MJ Kappers, RA Oliver
Journal of Applied Physics 108 (8), 2010
362010
Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN
KTP Lim, C Deakin, B Ding, X Bai, P Griffin, T Zhu, RA Oliver, ...
APL Materials 7 (2), 2019
322019
Origins of spectral diffusion in the micro-photoluminescence of single InGaN quantum dots
BPL Reid, T Zhu, TJ Puchtler, LJ Fletcher, CCS Chan, RA Oliver, ...
Japanese Journal of Applied Physics 52 (8S), 08JE01, 2013
312013
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Статьи 1–20