| Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer FA McGuire, Z Cheng, K Price, AD Franklin Applied Physics Letters 109 (9), 2016 | 122 | 2016 |
| Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts Z Cheng, Y Yu, S Singh, K Price, SG Noyce, YC Lin, L Cao, AD Franklin Nano letters 19 (8), 5077-5085, 2019 | 91 | 2019 |
| How to report and benchmark emerging field-effect transistors Z Cheng, CS Pang, P Wang, ST Le, Y Wu, D Shahrjerdi, I Radu, ... Nature Electronics 5 (7), 416-423, 2022 | 72 | 2022 |
| Electronic stability of carbon nanotube transistors under long-term bias stress SG Noyce, JL Doherty, Z Cheng, H Han, S Bowen, AD Franklin Nano letters 19 (3), 1460-1466, 2019 | 46 | 2019 |
| Contacting and gating 2-D nanomaterials Z Cheng, K Price, AD Franklin IEEE Transactions on Electron Devices 65 (10), 4073-4083, 2018 | 34 | 2018 |
| Capping Layers to Improve the Electrical Stress Stability of MoS2 Transistors JL Doherty, SG Noyce, Z Cheng, H Abuzaid, AD Franklin ACS applied materials & interfaces 12 (31), 35698-35706, 2020 | 28 | 2020 |
| Convergent ion beam alteration of 2D materials and metal-2D interfaces Z Cheng, H Abuzaid, Y Yu, F Zhang, Y Li, SG Noyce, NX Williams, YC Lin, ... 2D Materials 6 (3), 034005, 2019 | 21 | 2019 |
| Are 2D interfaces really flat? Z Cheng, H Zhang, ST Le, H Abuzaid, G Li, L Cao, AV Davydov, ... ACS nano 16 (4), 5316-5324, 2022 | 20 | 2022 |
| Modifying the Ni-MoS2 Contact Interface Using a Broad-Beam Ion Source Z Cheng, JA Cardenas, F McGuire, S Najmaei, AD Franklin IEEE Electron Device Letters 37 (9), 1234-1237, 2016 | 16 | 2016 |
| Unanticipated polarity shift in edge-contacted tungsten-based 2D transition metal dichalcogenide transistors H Abuzaid, Z Cheng, G Li, L Cao, AD Franklin IEEE Electron Device Letters 42 (10), 1563-1566, 2021 | 10 | 2021 |
| Effects of gate stack composition and thickness in 2-D negative capacitance FETs YC Lin, F McGuire, S Noyce, N Williams, Z Cheng, J Andrews, ... IEEE Journal of the Electron Devices Society 7, 645-649, 2019 | 6 | 2019 |
| Distinct Contact Scaling Effects in MoS2 Transistors Revealed with Asymmetrical Contact Measurements Z Cheng, J Backman, H Zhang, H Abuzaid, G Li, Y Yu, L Cao, ... Advanced Materials 35 (21), 2210916, 2023 | 4 | 2023 |
| Using Ar Ion beam exposure to improve contact resistance in MoS2 FETs Z Cheng, JA Cardenas, F McGuire, AD Franklin Device Research Conference (DRC), 2016 74th Annual, 1-2, 2016 | 3 | 2016 |
| New Observations in Contact Scaling for 2D FETs Z Cheng, H Abuzaid, Y Yu, S Singh, L Cao, AD Franklin 2019 Device Research Conference (DRC), 227-228, 2019 | 2 | 2019 |
| Asymmetrical contact scaling and measurements in MoS2 FETs Z Cheng, J Backman, H Zhang, H Abuzaid, G Li, Y Yu, L Cao, ... arXiv preprint arXiv:2209.04144, 2022 | | 2022 |
| New Approaches and Observations in Scaled Contacts for 2D FETs Z Cheng, H Abuzaid, Y Yu, S Singh, L Cao, C Richter, A Franklin Bulletin of the American Physical Society 65, 2020 | | 2020 |
| Modification and Scaling of Metal Contacts to 2D Materials Using an in-situ Argon Ion Beam Z Cheng Duke University, 2019 | | 2019 |
| Edge contacts to multilayer MoS2 using in situ Ar ion beam Z Cheng, K Price, AD Franklin Device Research Conference (DRC), 2017 75th Annual, 1-2, 2017 | | 2017 |
Aaron FranklinAddy Professor of Electrical & Computer Engineering, Duke UniversityVerified email at duke.edu
