| The Mechanism of Superfast Switching of Avalanche-Diodes Based on GaAs Doped With Cr and Fe IA Prudaev, VL Oleinik, TE Smirnova, VV Kopyev, MG Verkholetov, ... IEEE Transactions on Electron Devices 65 (8), 3339-3344, 2018 | 42 | 2018 |
| Avalanche Delay and Dynamic Triggering in GaAs-Based S-Diodes Doped With Deep Level Impurity IA Prudaev, SN Vainshtein, MG Verkholetov, VL Oleinik, VV Kopyev IEEE Transactions on Electron Devices 68 (1), 57-65, 2020 | 28 | 2020 |
| Hydrogen influence on electrical properties of Pt-contacted α-Ga2O3/ϵ-Ga2O3 structures grown on patterned sapphire substrates AV Almaev, VI Nikolaev, SI Stepanov, AI Pechnikov, AV Chikiryaka, ... Journal of Physics D: Applied Physics 53 (41), 414004, 2020 | 24 | 2020 |
| Solar-Blind Ultraviolet Detectors Based on High-Quality HVPE α-Ga2O3 Films With Giant Responsivity A Almaev, V Nikolaev, V Kopyev, S Shapenkov, N Yakovlev, B Kushnarev, ... IEEE Sensors Journal 23 (17), 19245-19255, 2023 | 22 | 2023 |
| Mechanism for long photocurrent time constants in α-Ga2O3 UV photodetectors AY Polyakov, AV Almaev, VI Nikolaev, AI Pechnikov, VI Shchemerov, ... ECS Journal of Solid State Science and Technology 12 (4), 045002, 2023 | 11 | 2023 |
| Effects of GaN barrier thickness on built-in electric field and internal quantum efficiency of blue InGaN/GaN multiple quantum wells LED structures IS Romanov, IA Prudaev, VV Kopyev Japanese Journal of Applied Physics 55 (5S), 05FJ15, 2016 | 11 | 2016 |
| Температурная зависимость квантового выхода структур с множественными квантовыми ямами InGaN/GaN при фото-и электролюминесценции ИА Прудаев, ИС Романов, ВВ Копьев, СБ Ширапов, ОП Толбанов, ... Известия высших учебных заведений 56 (7), 2013 | 11 | 2013 |
| Electroconductive and photoelectric properties of Pt/(100) β-Ga2O3 Schottky barrier diode based on Czochralski grown crystal A Almaev, V Nikolaev, N Yakovlev, P Butenko, A Tsymbalov, M Boiko, ... Journal of Vacuum Science & Technology A 42 (4), 2024 | 10 | 2024 |
| High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure A Almaev, N Yakovlev, V Kopyev, V Nikolaev, P Butenko, J Deng, ... Chemosensors 11 (6), 325, 2023 | 10 | 2023 |
| Ito thin films for low-resistance gas sensors AV Almaev, VV Kopyev, VA Novikov, AV Chikiryaka, NN Yakovlev, ... Materials 16 (1), 342, 2022 | 10 | 2022 |
| Comparative analysis of efficiency droop in InGaN/GaN light-emitting diodes for electrical and optical pumping conditions VV Kopyev, IA Prudaev, IS Romanov Journal of Physics: Conference Series 541 (1), 012055, 2014 | 9 | 2014 |
| Gas Sensitivity of IBSD Deposited TiO2 Thin Films AV Almaev, NN Yakovlev, BO Kushnarev, VV Kopyev, VA Novikov, ... Coatings 12 (10), 1565, 2022 | 8 | 2022 |
| Effect of growth temperature of GaN: Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells IS Romanov, IA Prudaev, VV Kopyev, AA Marmalyuk, VA Kureshov, ... Journal of Physics: Conference Series 541 (1), 012083, 2014 | 6 | 2014 |
| Microplasma Breakdown in GaAs‐Based Avalanche S‐Diodes Doped with Deep Fe Acceptors I Prudaev, V Kopyev, V Oleinik physica status solidi (b) 260 (4), 2200446, 2023 | 5 | 2023 |
| Suppression of Dynamic Current Leakage in Avalanche S-Diode Switching Circuits IA Prudaev, SN Vainshtein, VV Kopyev, VL Oleinik, SN Marochkin IEEE Electron Device Letters 43 (1), 100-103, 2021 | 5 | 2021 |
| Влияние баллистической утечки на температурную зависимость квантового выхода светодиодов на основе множественных квантовых ям InGaN/GaN ИА Прудаев, ИС Романов, ВЛ Олейник, ВВ Копьев | 4 | 2017 |
| Temperature dependence of quantum efficiency of InGaN/GaN LED structures at high current density IA Prudaev, VV Kopyev, IS Romanov, VN Brudnyi Russian Physics Journal 58, 641-645, 2015 | 4 | 2015 |
| Светодиодные структуры InGaN/GaN с короткопериодной сверхрешеткой, выращенные на планарной и профилированной сапфировых подложках ИС Романов, ВН Брудный, ВВ Копьев, ВА Новиков, АА Мармалюк, ... | 4 | 2014 |
| Effect of Ultraviolet Radiation and Electric Field on the Conductivity of Structures Based on α- and ε-Ga2O3 VM Kalygina, VI Nikolaev, AV Almaev, AV Tsymbalov, VV Kopyev, ... Semiconductors 54, 1224-1229, 2020 | 3 | 2020 |
| On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes IA Prudaev, VV Kopyev, IS Romanov, VL Oleynik Semiconductors 51, 232-238, 2017 | 3 | 2017 |
Илья ПрудаевТомский государственный университетVerified email at persona.tsu.ru
