Broadband frequency dispersion small-signal modeling of the output conductance and transconductance in AlInN/GaN HEMTs SD Nsele, L Escotte, JG Tartarin, S Piotrowicz, SL Delage IEEE Transactions on Electron Devices 60 (4), 1372-1378, 2013 | 56 | 2013 |
Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design G Soubercaze-Pun, JG Tartarin, L Bary, J Rayssac, E Morvan, B Grimbert, ... 2006 IEEE MTT-S International Microwave Symposium Digest, 747-750, 2006 | 30 | 2006 |
Using low frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction JG Tartarin, A Rennane, E Angeli, L Bary, JC De Jaeger, S Delage, ... Noise in Devices and Circuits II 5470, 296-306, 2004 | 22 | 2004 |
Ka-band low noise amplifiers based on InAlN/GaN technologies SD Nsele, C Robin, JG Tartarin, L Escotte, S Piotrowicz, O Jardel, ... 2015 International Conference on Noise and Fluctuations (ICNF), 1-4, 2015 | 20 | 2015 |
I-DLTS, electrical lag and low frequency noise measurements of trapping effects in AlGaN/GaN HEMT for reliability studies JG Tartarin, S Karboyan, F Olivié, G Astre, L Bary, B Lambert 2011 6th European Microwave Integrated Circuit Conference, 438-441, 2011 | 20 | 2011 |
Microwave noise parameters of pseudomorphic GaInAs HEMTs under optical illumination L Escotte, K Grenier, JG Tartarin, J Graffeuil IEEE transactions on microwave theory and techniques 46 (11), 1788-1789, 1998 | 20 | 1998 |
Diagnostic tools for accurate reliability investigations of GaN devices JG Tartarin 2011 21st International Conference on Noise and Fluctuations, 452-457, 2011 | 19 | 2011 |
Generation‐Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Noise Measurements And SIMS Characterization JG Tartarin, G Soubercaze‐Pun, JL Grondin, L Bary, J Mimila‐Arroyo, ... AIP Conference Proceedings 922 (1), 163-166, 2007 | 19 | 2007 |
Noise characteristics of AlInN/GaN HEMTs at microwave frequencies SD Nsele, L Escotte, JG Tartarin, S Piotrowicz 2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013 | 18 | 2013 |
RF source characterization of tire pressure monitoring system M Cheikh, J David, JG Tartarin, S Kessler, A Morin 2009 European Wireless Technology Conference, 176-179, 2009 | 18 | 2009 |
Analysis of barrier inhomogeneities in AlGaN/GaN HEMTs' Schottky diodes by IVT measurements S Karboyan, JG Tartarin, B Lambert 2013 European Microwave Integrated Circuit Conference, 240-243, 2013 | 17 | 2013 |
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements S Karboyan, JG Tartarin, M Rzin, L Brunel, A Curutchet, N Malbert, ... Microelectronics Reliability 53 (9-11), 1491-1495, 2013 | 17 | 2013 |
Generation-recombination traps in AlGaN/GaN HEMT analyzed by time-domain and frequency-domain measurements: impact of HTRB stress on short term and long term memory effects JG Tartarin, G Astre, S Karboyan, T Noutsa, B Lambert 2013 IEEE International Wireless Symposium (IWS), 1-4, 2013 | 17 | 2013 |
Hot carrier effects in Si-SiGe HBTs M Borgarino, J Kuchenbecker, JG Tartarin, L Bary, T Kovacic, R Plana, ... IEEE transactions on device and materials reliability 1 (2), 86-94, 2001 | 17 | 2001 |
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors M Borgarino, JG Tartarin, J Kuchenbecker, T Parra, H Lafontaine, ... IEEE microwave and guided wave letters 10 (11), 466-468, 2000 | 17 | 2000 |
InAlN/GaN HEMT technology for robust HF receivers: an overview of the HF and LF noise performances SD Nsele, JG Tartarin, L Escotte, S Piotrowicz, S Delage 2015 International Conference on Noise and Fluctuations (ICNF), 1-4, 2015 | 16 | 2015 |
2 W mm− 1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz MR Irekti, M Lesecq, N Defrance, E Okada, E Frayssinet, Y Cordier, ... Semiconductor Science and Technology 34 (12), 12LT01, 2019 | 13 | 2019 |
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test B Lambert, N Labat, D Carisetti, S Karboyan, JG Tartarin, J Thorpe, ... Microelectronics Reliability 52 (9-10), 2184-2187, 2012 | 13 | 2012 |
New approach for an accurate Schottky Barrier Height's extraction by IVT measurements O Lazăr, JG Tartarin, B Lambert, C Moreau, JL Roux, JL Muraro 2015 IEEE MTT-S International Microwave Symposium, 1-4, 2015 | 12 | 2015 |
High-frequency noise in heterojunction bipolar transistors L Escotte, JG Tartarin, R Plana, J Graffeuil Solid-State Electronics 42 (4), 661-663, 1998 | 12 | 1998 |