| Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy JG Keizer, J Bocquel, PM Koenraad, T Mano, T Noda, K Sakoda Applied Physics Letters 96 (6), 2010 | 79 | 2010 |
| Spatial metrology of dopants in silicon with exact lattice site precision M Usman, J Bocquel, J Salfi, B Voisin, A Tankasala, R Rahman, ... Nature nanotechnology 11 (9), 763-768, 2016 | 68 | 2016 |
| Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion N Ha, T Mano, YL Chou, YN Wu, SJ Cheng, J Bocquel, PM Koenraad, ... Physical Review B 92 (7), 075306, 2015 | 51 | 2015 |
| Precise shape engineering of epitaxial quantum dots by growth kinetics S Bietti, J Bocquel, S Adorno, T Mano, JG Keizer, PM Koenraad, ... Physical Review B 92 (7), 075425, 2015 | 42 | 2015 |
| Valley interference and spin exchange at the atomic scale in silicon B Voisin, J Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, ... Nature communications 11 (1), 6124, 2020 | 32 | 2020 |
| Two-electron states of a group-V donor in silicon from atomistic full configuration interactions A Tankasala, J Salfi, J Bocquel, B Voisin, M Usman, G Klimeck, ... Physical Review B 97 (19), 195301, 2018 | 28 | 2018 |
| Spatially resolved resonant tunneling on single atoms in silicon B Voisin, J Salfi, J Bocquel, R Rahman, S Rogge Journal of Physics: Condensed Matter 27 (15), 154203, 2015 | 28 | 2015 |
| Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory M Usman, R Rahman, J Salfi, J Bocquel, B Voisin, S Rogge, G Klimeck, ... Journal of Physics: Condensed Matter 27 (15), 154207, 2015 | 28 | 2015 |
| Low-temperature photophysics of single nitrogen-vacancy centers in diamond J Happacher, DA Broadway, J Bocquel, P Reiser, A Jimenéz, ... Physical Review Letters 128 (17), 177401, 2022 | 24 | 2022 |
| Valley filtering in spatial maps of coupling between silicon donors and quantum dots J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, MY Simmons, ... Physical Review X 8 (3), 031049, 2018 | 24 | 2018 |
| Donor wave functions in Si gauged by STM images AL Saraiva, J Salfi, J Bocquel, B Voisin, S Rogge, RB Capaz, ... Physical Review B 93 (4), 045303, 2016 | 23 | 2016 |
| Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope J Bocquel, VR Kortan, C Şahin, RP Campion, BL Gallagher, ME Flatté, ... Physical Review B—Condensed Matter and Materials Physics 87 (7), 075421, 2013 | 22 | 2013 |
| Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy J Bocquel, AD Giddings, T Mano, TJ Prosa, DJ Larson, PM Koenraad Applied Physics Letters 105 (15), 2014 | 17 | 2014 |
| CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K T Aichele, A Tribu, G Sallen, J Bocquel, E Bellet-Amalric, C Bougerol, ... Journal of crystal growth 311 (7), 2123-2127, 2009 | 17 | 2009 |
| Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy JG Keizer, M Bozkurt, J Bocquel, T Mano, T Noda, K Sakoda, EC Clark, ... Journal of Applied Physics 109 (10), 2011 | 14 | 2011 |
| Magnetic Field Mapping Around Individual Magnetic Nanoparticle Agglomerates Using Nitrogen‐Vacancy Centers in Diamond F Camarneiro, J Bocquel, J Gallo, M Bañobre‐López, K Berg‐Sørensen, ... Particle & Particle Systems Characterization 38 (8), 2100011, 2021 | 10 | 2021 |
| A probabilistic finite state logic machine realized experimentally on a single dopant atom B Fresch, J Bocquel, S Rogge, RD Levine, F Remacle Nano Letters 17 (3), 1846-1852, 2017 | 10 | 2017 |
| Temperature Dependent Photophysics of Single NV Centers in Diamond J Happacher, J Bocquel, HT Dinani, MA Tschudin, P Reiser, ... Physical Review Letters 131 (8), 086904, 2023 | 8 | 2023 |
| Implementation of Multivariable Logic Functions in Parallel by Electrically Addressing a Molecule of Three Dopants in Silicon B Fresch, J Bocquel, D Hiluf, S Rogge, RD Levine, F Remacle ChemPhysChem 18 (13), 1790-1797, 2017 | 8 | 2017 |
| Charge stability and charge-state-based spin readout of shallow nitrogen-vacancy centers in diamond R Giri, RH Jensen, D Khurana, J Bocquel, IP Radko, J Lang, C Osterkamp, ... ACS Applied Electronic Materials 5 (12), 6603-6610, 2023 | 5 | 2023 |
