| Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling S Tongay, H Sahin, C Ko, A Luce, W Fan, K Liu, J Zhou, YS Huang, ... Nature communications 5 (1), 3252, 2014 | 1049 | 2014 |
| Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors E Liu, Y Fu, Y Wang, Y Feng, H Liu, X Wan, W Zhou, B Wang, L Shao, ... Nature communications 6 (1), 1-7, 2015 | 601 | 2015 |
| Single-Layer ReS2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy YC Lin, HP Komsa, CH Yeh, T Bjorkman, ZY Liang, CH Ho, YS Huang, ... ACS nano 9 (11), 11249-11257, 2015 | 400 | 2015 |
| High-mobility InSe transistors: the role of surface oxides PH Ho, YR Chang, YC Chu, MK Li, CA Tsai, WH Wang, CH Ho, CW Chen, ... ACS nano 11 (7), 7362-7370, 2017 | 199 | 2017 |
| Formation and stability of point defects in monolayer rhenium disulfide S Horzum, D Çakır, J Suh, S Tongay, YS Huang, CH Ho, J Wu, H Sahin, ... Physical Review B 89 (15), 155433, 2014 | 177 | 2014 |
| High mobilities in layered InSe transistors with indium‐encapsulation‐induced surface charge doping M Li, CY Lin, SH Yang, YM Chang, JK Chang, FS Yang, C Zhong, ... Advanced Materials 30 (44), 1803690, 2018 | 130 | 2018 |
| Disorder engineering and conductivity dome in ReS2 with electrolyte gating D Ovchinnikov, F Gargiulo, A Allain, DJ Pasquier, D Dumcenco, CH Ho, ... Nature communications 7 (1), 12391, 2016 | 127 | 2016 |
| The study of optical band edge property of bismuth oxide nanowires α-Bi2O3 CH Ho, CH Chan, YS Huang, LC Tien, LC Chao Optics express 21 (10), 11965-11972, 2013 | 122 | 2013 |
| Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons and metal-semiconductor Zn/ZnO nanospheres JH Lin, RA Patil, RS Devan, ZA Liu, YP Wang, CH Ho, Y Liou, YR Ma Scientific reports 4 (1), 6967, 2014 | 115 | 2014 |
| Absorption-edge anisotropy in and layered semiconductors CH Ho, YS Huang, KK Tiong, PC Liao Physical Review B 58 (24), 16130, 1998 | 112 | 1998 |
| Optical properties of the interband transitions of layered gallium sulfide CH Ho, SL Lin Journal of applied physics 100 (8), 2006 | 102 | 2006 |
| Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features FS Yang, M Li, MP Lee, IY Ho, JY Chen, H Ling, Y Li, JK Chang, SH Yang, ... Nature Communications 11 (1), 2972, 2020 | 97 | 2020 |
| Surface Oxide Effect on Optical Sensing and Photoelectric Conversion of α-In2Se3 Hexagonal Microplates CH Ho, CH Lin, YP Wang, YC Chen, SH Chen, YS Huang ACS applied materials & interfaces 5 (6), 2269-2277, 2013 | 91 | 2013 |
| Bending photoluminescence and surface photovoltaic effect on multilayer InSe 2D microplate crystals CH Ho, YJ Chu Advanced Optical Materials 3 (12), 1750-1758, 2015 | 84 | 2015 |
| In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals CH Ho, YS Huang, KK Tiong Journal of alloys and compounds 317, 222-226, 2001 | 84 | 2001 |
| Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure W Wen, Y Zhu, X Liu, HP Hsu, Z Fei, Y Chen, X Wang, M Zhang, KH Lin, ... small 13 (12), 1603788, 2017 | 80 | 2017 |
| Temperature dependence of energies and broadening parameters of the band-edge excitons of single crystals CH Ho, CS Wu, YS Huang, PC Liao, KK Tiong Journal of Physics: Condensed Matter 10 (41), 9317, 1998 | 79 | 1998 |
| Thermoreflectance characterization of β-Ga2O3 thin-film nanostrips CH Ho, CY Tseng, LC Tien Optics Express 18 (16), 16360-16369, 2010 | 77 | 2010 |
| Crystal structure and band-edge transitions of ReS2− xSex layered compounds CH Ho, YS Huang, PC Liao, KK Tiong Journal of Physics and Chemistry of Solids 60 (11), 1797-1804, 1999 | 77 | 1999 |
| Gallium Oxide: Technology, Devices and Applications S Pearton, F Ren, M Mastro Elsevier, 2018 | 75 | 2018 |
