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Sami Suihkonen
Sami Suihkonen
Researcher, Aalto University
Verified email at aalto.fi
Title
Cited by
Cited by
Year
A single-pixel wireless contact lens display
AR Lingley, M Ali, Y Liao, R Mirjalili, M Klonner, M Sopanen, S Suihkonen, ...
Journal of Micromechanics and Microengineering 21 (12), 125014, 2011
1692011
Photocatalytic degradation of dyes by CdS microspheres under near UV and blue LED radiation
E Repo, S Rengaraj, S Pulkka, E Castangnoli, S Suihkonen, M Sopanen, ...
Separation and Purification Technology 120, 206-214, 2013
762013
P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si
N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ...
IEEE Electron Device Letters 40 (7), 1036-1039, 2019
692019
Identification of the -O defect complex in AlN single crystals
JM Mäki, I Makkonen, F Tuomisto, A Karjalainen, S Suihkonen, ...
Physical Review B 84 (8), 081204, 2011
652011
Low energy electron beam induced vacancy activation in GaN
H Nykänen, S Suihkonen, L Kilanski, M Sopanen, F Tuomisto
Applied Physics Letters 100 (12), 122105, 2012
532012
Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals
S Pimputkar, S Suihkonen, M Imade, Y Mori, JS Speck, S Nakamura
Journal of crystal growth 432, 49-53, 2015
512015
Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
S Suihkonen, T Lang, O Svensk, J Sormunen, PT Törmä, M Sopanen, ...
Journal of crystal growth 300 (2), 324-329, 2007
482007
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
PT Törmä, O Svensk, M Ali, S Suihkonen, M Sopanen, MA Odnoblyudov, ...
Journal of Crystal Growth 310 (23), 5162-5165, 2008
432008
Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes
P Kivisaari, L Riuttanen, J Oksanen, S Suihkonen, M Ali, H Lipsanen, ...
Applied Physics Letters 101 (2), 021113, 2012
412012
Atomic layer etching of gallium nitride (0001)
C Kauppinen, SA Khan, J Sundqvist, DB Suyatin, S Suihkonen, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 (6 …, 2017
402017
AlN metal–semiconductor field-effect transistors using Si-ion implantation
H Okumura, S Suihkonen, J Lemettinen, A Uedono, Y Zhang, D Piedra, ...
Japanese Journal of Applied Physics 57 (4S), 04FR11, 2018
392018
Defects in single crystalline ammonothermal gallium nitride
S Suihkonen, S Pimputkar, S Sintonen, F Tuomisto
Advanced Electronic Materials 3 (6), 1600496, 2017
392017
Impurity breakdown and terahertz luminescence in epilayers under external electric field
VA Shalygin, LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, ...
Journal of applied physics 106 (12), 123523, 2009
392009
Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN
S Sintonen, M Rudziński, S Suihkonen, H Jussila, M Knetzger, E Meissner, ...
Journal of Applied Physics 116 (8), 083504, 2014
382014
Growth of InN by vertical flow MOVPE
S Suihkonen, J Sormunen, VT Rangel-Kuoppa, H Koskenvaara, ...
Journal of crystal growth 291 (1), 8-11, 2006
382006
Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation
GA Melentev, VA Shalygin, LE Vorobjev, VY Panevin, DA Firsov, ...
Journal of Applied Physics 119 (9), 093104, 2016
372016
Enhanced light extraction from InGaN/GaN quantum wells with silver gratings
E Homeyer, P Mattila, J Oksanen, T Sadi, H Nykänen, S Suihkonen, ...
Applied Physics Letters 102 (8), 081110, 2013
352013
Effect of growth conditions on electrical properties of Mg-doped p-GaN
O Svensk, S Suihkonen, T Lang, H Lipsanen, M Sopanen, ...
Journal of crystal growth 298, 811-814, 2007
342007
Infrared absorption of hydrogen-related defects in ammonothermal GaN
S Suihkonen, S Pimputkar, JS Speck, S Nakamura
Applied Physics Letters 108 (20), 202105, 2016
312016
Low energy electron beam induced damage on InGaN/GaN quantum well structure
H Nykänen, P Mattila, S Suihkonen, J Riikonen, E Quillet, E Homeyer, ...
Journal of Applied Physics 109 (8), 083105, 2011
312011
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