Подписаться
Bassem Salem
Bassem Salem
LTM Grenoble / CNRS
Подтвержден адрес электронной почты в домене cea.fr
Название
Процитировано
Процитировано
Год
Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP (001)
J Brault, M Gendry, G Grenet, G Hollinger, J Olivares, B Salem, ...
Journal of applied physics 92 (1), 506-510, 2002
1162002
From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
M Gendry, C Monat, J Brault, P Regreny, G Hollinger, B Salem, G Guillot, ...
Journal of applied physics 95 (9), 4761-4766, 2004
1082004
Effect of HCl on the doping and shape control of silicon nanowires
P Gentile, A Solanki, N Pauc, F Oehler, B Salem, G Rosaz, T Baron, ...
Nanotechnology 23 (21), 215702, 2012
832012
Silicon nanowires: Diameter dependence of growth rate and delay in growth
F Dhalluin, T Baron, P Ferret, B Salem, P Gentile, JC Harmand
Applied Physics Letters 96 (13), 133109, 2010
722010
Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method
O Demichel, V Calvo, A Besson, P Noé, B Salem, N Pauc, F Oehler, ...
Nano letters 10 (7), 2323-2329, 2010
642010
Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP (001)
P Miska, J Even, C Platz, B Salem, T Benyattou, C Bru-Chevalier, ...
Journal of applied physics 95 (3), 1074-1080, 2004
632004
High-performance silicon nanowire field-effect transistor with silicided contacts
G Rosaz, B Salem, N Pauc, P Gentile, A Potié, A Solanki, T Baron
Semiconductor science and technology 26 (8), 085020, 2011
542011
An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: application to GaN nanowires
X Xu, A Potié, R Songmuang, JW Lee, B Bercu, T Baron, B Salem, ...
Nanotechnology 22 (10), 105704, 2011
542011
Pulsed photoconductive antenna terahertz sources made on ion-implanted GaAs substrates
B Salem, D Morris, V Aimez, J Beerens, J Beauvais, D Houde
Journal of Physics: Condensed Matter 17 (46), 7327, 2005
512005
Composition-Dependent Interfacial Abruptness in Au-Catalyzed Si1–xGex/Si/Si1–xGex Nanowire Heterostructures
P Periwal, NV Sibirev, G Patriarche, B Salem, F Bassani, VG Dubrovskii, ...
Nano letters 14 (9), 5140-5147, 2014
482014
Optical properties of self-assembled InAs quantum islands grown on InP (001) vicinal substrates
B Salem, J Olivares, G Guillot, G Bremond, J Brault, C Monat, M Gendry, ...
Applied Physics Letters 79 (26), 4435-4437, 2001
462001
Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements
N Hamdaoui, R Ajjel, B Salem, M Gendry
Materials science in semiconductor processing 26, 431-437, 2014
432014
Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP (001)
B Salem, T Benyattou, G Guillot, C Bru-Chevallier, G Bremond, C Monat, ...
Physical Review B 66 (19), 193305, 2002
432002
Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials
B Salem, D Morris, V Aimez, J Beauvais, D Houde
Semiconductor science and technology 21 (3), 283, 2006
372006
Controlled growth of SiGe nanowires by addition of HCl in the gas phase
A Potié, T Baron, L Latu-Romain, G Rosaz, B Salem, L Montes, P Gentile, ...
Journal of Applied Physics 110 (2), 024311, 2011
342011
Size and shape effects on excitons and biexcitons in single quantum dots
N Chauvin, B Salem, G Bremond, G Guillot, C Bru-Chevallier, M Gendry
Journal of applied physics 100 (7), 073702, 2006
332006
Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices
B Ilahi, L Sfaxi, F Hassen, L Bouzaiene, H Maaref, B Salem, G Bremond, ...
physica status solidi (a) 199 (3), 457-463, 2003
332003
Vertically integrated silicon-germanium nanowire field-effect transistor
G Rosaz, B Salem, N Pauc, A Potié, P Gentile, T Baron
Applied Physics Letters 99 (19), 193107, 2011
302011
Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots
B Ilahi, L Sfaxi, F Hassen, B Salem, G Bremond, O Marty, L Bouzaiene, ...
Materials Science and Engineering: C 26 (2-3), 374-377, 2006
292006
Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources
B Salem, D Morris, Y Salissou, V Aimez, S Charlebois, M Chicoine, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 24 (3 …, 2006
282006
В данный момент система не может выполнить эту операцию. Повторите попытку позднее.
Статьи 1–20