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William Alan Doolittle
William Alan Doolittle
Verified email at ece.gatech.edu
Title
Cited by
Cited by
Year
Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics
G Namkoong, WA Doolittle, AS Brown, M Losurdo, P Capezzuto, G Bruno
Journal of applied physics 91 (4), 2499-2507, 2002
1072002
InN: A material with photovoltaic promise and challenges
E Trybus, G Namkoong, W Henderson, S Burnham, WA Doolittle, ...
Journal of Crystal Growth 288 (2), 218-224, 2006
1062006
Metal modulation epitaxy growth for extremely high hole concentrations above in GaN
G Namkoong, E Trybus, KK Lee, M Moseley, WA Doolittle, DC Look
Applied Physics Letters 93 (17), 172112, 2008
792008
GaN betavoltaic energy converters
C Honsberg, WA Doolittle, M Allen, C Wang
Conference Record of the Thirty-first IEEE Photovoltaic Specialists …, 2005
742005
Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy
SD Burnham, G Namkoong, DC Look, B Clafin, WA Doolittle
Journal of Applied Physics 104 (2), 024902, 2008
692008
Hybrid vehicle with integral generator for auxiliary loads
AJ Buglione, TS Moore, G Cilibraise, KS Lee, RG Reed Jr, DC Schroeder, ...
US Patent 7,231,994, 2007
672007
Energetics of Mg incorporation at GaN(0001) and surfaces
Q Sun, A Selloni, TH Myers, WA Doolittle
Physical Review B 73 (15), 155337, 2006
652006
Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers
M Losurdo, P Capezzuto, G Bruno, G Namkoong, WA Doolittle, AS Brown
Journal of applied physics 91 (4), 2508-2518, 2002
652002
Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap
M Moseley, J Lowder, D Billingsley, WA Doolittle
Applied Physics Letters 97 (19), 191902, 2010
562010
Transient atomic behavior and surface kinetics of GaN
M Moseley, D Billingsley, W Henderson, E Trybus, WA Doolittle
Journal of Applied Physics 106 (1), 014905, 2009
532009
Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN
BP Gunning, CAM Fabien, JJ Merola, EA Clinton, WA Doolittle, S Wang, ...
Journal of Applied Physics 117 (4), 045710, 2015
522015
Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation
AM Fischer, YO Wei, FA Ponce, M Moseley, B Gunning, WA Doolittle
Applied Physics Letters 103 (13), 131101, 2013
492013
Molecular beam epitaxy of complex metal-oxides: Where have we come, where are we going, and how are we going to get there?
WA Doolittle, AG Carver, W Henderson
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
492005
III-nitrides on oxygen-and zinc-face ZnO substrates
G Namkoong, S Burnham, KK Lee, E Trybus, WA Doolittle, M Losurdo, ...
Applied Physics Letters 87 (18), 184104, 2005
472005
III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy
G Namkoong, KK Lee, SM Madison, W Henderson, SE Ralph, ...
Applied Physics Letters 87 (17), 171107, 2005
462005
Oxygen adsorption and incorporation at irradiated and surfaces: First-principles density-functional calculations
Q Sun, A Selloni, TH Myers, WA Doolittle
Physical Review B 74 (19), 195317, 2006
452006
Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells
CAM Fabien, WA Doolittle
Solar Energy Materials and Solar Cells 130, 354-363, 2014
442014
metal–semiconductor–metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy
SW Seo, KK Lee, S Kang, S Huang, WA Doolittle, NM Jokerst, AS Brown
Applied Physics Letters 79 (9), 1372-1374, 2001
442001
The impact of substrate nitridation temperature and buffer design and synthesis on the polarity of GaN epitaxial films
G Namkoong, WA Doolittle, AS Brown, M Losurdo, MM Giangregorio, ...
Journal of crystal growth 252 (1-3), 159-166, 2003
432003
Reproducible reflection high energy electron diffraction signatures for improvement of AlN using in situ growth regime characterization
SD Burnham, G Namkoong, KK Lee, WA Doolittle
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
422007
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Articles 1–20