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Anurag Chaudhry
Anurag Chaudhry
Неизвестная организация
Подтвержден адрес электронной почты в домене ucdavis.edu
Название
Процитировано
Процитировано
Год
Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: a review
A Chaudhry, MJ Kumar
IEEE Transactions on Device and Materials Reliability 4 (1), 99-109, 2004
4592004
Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs
MJ Kumar, A Chaudhry
IEEE Transactions on Electron Devices 51 (4), 569-574, 2004
3092004
Investigation of the novel attributes of a fully depleted dual-material gate SOI MOSFET
A Chaudhry, MJ Kumar
IEEE Transactions on Electron Devices 51 (9), 1463-1467, 2004
1582004
Field programmable logic device with efficient memory utilization
M Singh, A Chaudhry
US Patent 6,788,104, 2004
1392004
First-principles study of luminescence in Ce-doped inorganic scintillators
A Canning, A Chaudhry, R Boutchko, N Grønbech-Jensen
Physical Review B 83 (12), 125115, 2011
1342011
Eu2+-doped Ba2CsI5, a new high-performance scintillator
ED Bourret-Courchesne, G Bizarri, R Borade, Z Yan, SM Hanrahan, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2009
1262009
First-principles study of luminescence in Eu2+-doped inorganic scintillators
A Chaudhry, R Boutchko, S Chourou, G Zhang, N Grønbech-Jensen, ...
PHYSICAL REVIEW B 89, 155105, 2014
952014
Ultra-low contact resistance of epitaxially interfaced bridged silicon nanowires
A Chaudhry, V Ramamurthi, E Fong, MS Islam
Nano letters 7 (6), 1536-1541, 2007
832007
New scintillators discovered by high-throughput screening
S Derenzo, G Bizarri, R Borade, E Bourret-Courchesne, R Boutchko, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2011
562011
First-principles studies of Ce-doped RE2M2O7 (RE = Y, La; M = Ti, Zr, Hf): A class of nonscintillators
A Chaudhry, A Canning, R Boutchko, MJ Weber, N Grønbech-Jensen, ...
Journal of Applied Physics 109 (8), 083708, 2011
402011
Luminescence study of cerium-doped La2Hf2O7: Effects due to trivalent and tetravalent cerium and oxygen vacancies
Y Eagleman, M Weber, A Chaudhry, S Derenzo
Journal of luminescence 132 (11), 2889-2896, 2012
362012
Scintillation properties of Eu2+-activated barium fluoroiodide
G Gundiah, E Bourret-Courchesne, G Bizarri, SM Hanrahan, A Chaudhry, ...
2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC), 1575-1578, 2009
312009
Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs
R Kotlyar, SM Cea, G Dewey, B Chu-Kung, UE Avci, R Rios, A Chaudhry, ...
US Patent 8,890,120, 2014
302014
First-principles studies and predictions of scintillation in Ce-doped materials
A Canning, R Boutchko, A Chaudhry, SE Derenzo
IEEE Transactions on Nuclear Science 56 (3), 944-948, 2009
262009
Dose radiation effects in FinFETs
X Wu, PCH Chan, A Orozco, A Vazquez, A Chaudhry, JP Colinge
Solid-state electronics 50 (2), 287-290, 2006
262006
Spin logic with spin hall electrodes and charge interconnects
S Manipatruni, DE Nikonov, A Chaudhry, IA Young
US Patent 10,679,782, 2020
252020
Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers
CC Kuo, K Oguz, ML Doczy, BS Doyle, S Suri, RS Chau, DL Kencke, ...
US Patent App. 14/039,668, 2015
212015
Fin thickness asymmetry effects in multiple-gate SOI FETs (MuGFETs)
T Schulz, W Xiong, CR Cleavelin, K Schruefer, M Gostkowski, K Matthews, ...
2005 IEEE International SOI Conference Proceedings, 154-156, 2005
192005
Process modeling for advanced device technologies
SM Cea, S Botelho, A Chaudhry, P Fleischmann, MD Giles, A Grigoriev, ...
Journal of Computational Electronics 13, 18-32, 2014
182014
Lanthanide doped strontium-barium cesium halide scintillators
G Bizarri, E Bourret-Courchesne, SE Derenzo, RB Borade, G Gundiah, ...
US Patent 9,053,832, 2015
162015
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Статьи 1–20