Junyoung Kwon
Junyoung Kwon
Samsung Advanced Institute of Technology
Подтвержден адрес электронной почты в домене samsung.com - Главная страница
Thickness-dependent Schottky barrier height of MoS2 field-effect transistors
J Kwon†, JY Lee†, YJ Yu, CH Lee, X Cui, J Hone, GH Lee*
Nanoscale 9 (18), 6151-6157, 2017
Horizontal-to-vertical transition of 2D layer orientation in low-temperature chemical vapor deposition-grown PtSe2 and its influences on electrical properties and device …
SS Han, JH Kim, C Noh, JH Kim, E Ji, J Kwon, SM Yu, TJ Ko, E Okogbue, ...
ACS Applied Materials & Interfaces 11 (14), 13598-13607, 2019
Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
J Son†, J Kwon†, SP Kim, Y Lv, J Yu, JY Lee, H Ryu, K Watanabe, ...
Nature Communications 9 (1), 1-9, 2018
Artificial synaptic emulators based on MoS2 flash memory devices with double floating gates
SG Yi, MU Park, SH Kim, CJ Lee, J Kwon, GH Lee, KH Yoo
ACS Applied Materials & Interfaces 10 (37), 31480-31487, 2018
Thickness-independent semiconducting-to-metallic conversion in wafer-scale two-dimensional PtSe2 layers by plasma-driven chalcogen defect engineering
MS Shawkat, J Gil, SS Han, TJ Ko, M Wang, D Dev, J Kwon, GH Lee, ...
ACS Applied Materials & Interfaces 12 (12), 14341-14351, 2020
High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact
D Seo, DY Lee, J Kwon, JJ Lee, T Taniguchi, K Watanabe, GH Lee, ...
Applied Physics Letters 115 (1), 2019
van der Waals epitaxial growth of single crystal α-MoO3 layers on layered materials growth templates
JH Kim†, JK Dash†, J Kwon, C Hyun, H Kim, E Ji, GH Lee
2D Materials 6 (1), 015016, 2018
Enhanced Photoluminescence of Multiple Two-Dimensional van der Waals Heterostructures Fabricated by Layer-by-Layer Oxidation of MoS2
S Kang†, YS Kim†, JH Jeong, J Kwon, JH Kim, Y Jung, JC Kim, B Kim, ...
ACS Applied Materials & Interfaces 13 (1), 1245-1252, 2021
Ethanol-CVD growth of sub-mm single-crystal graphene on flat Cu surfaces
A Gnisci, G Faggio, G Messina, J Kwon, JY Lee, GH Lee, T Dikonimos, ...
The Journal of Physical Chemistry C 122 (50), 28830-28838, 2018
Tailoring surface properties via functionalized hydrofluorinated graphene compounds
J Son, N Buzov, S Chen, D Sung, H Ryu, J Kwon, SP Kim, S Namiki, J Xu, ...
Advanced Materials 31 (39), 1903424, 2019
All-2D ReS2 transistors with split gates for logic circuitry
J Kwon, Y Shin, H Kwon, JY Lee, H Park, K Watanabe, T Taniguchi, J Kim, ...
Scientific Reports 9 (1), 10354, 2019
Amorphous Carbon Films for Electronic Applications
IS Kim†, CE Shim†, SW Kim, CS Lee, J Kwon, KE Byun*, U Jeong*
Advanced Materials, 2204912, 2022
Tailoring Single-and Double-Sided Fluorination of Bilayer Graphene via Substrate Interactions
J Son, H Ryu, J Kwon, S Huang, J Yu, J Xu, K Watanabe, T Taniguchi, E Ji, ...
Nano Letters 21 (2), 891-898, 2020
Interactions between primary neurons and graphene films with different structure and electrical conductivity
A Capasso, J Rodrigues, M Moschetta, F Buonocore, G Faggio, ...
Advanced Functional Materials 31 (11), 2005300, 2021
Tunable wettability of graphene through non-destructive hydrogenation and wettability-based patterning for bio-applications
J Son†, JY Lee†, N Han, J Cha, J Choi, J Kwon, SW Nam, KH Yoo, ...
Nano Letters 20 (8), 5625-5631, 2020
Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography
VL Nguyen, M Seol, J Kwon, EK Lee, WJ Jang, HW Kim, C Liang, ...
Nature Electronics 6 (2), 146-153, 2023
Multioperation‐mode light‐emitting field‐effect transistors based on van der Waals heterostructure
J Kwon, JC Shin, H Ryu, JY Lee, D Seo, K Watanabe, T Taniguchi, ...
Advanced Materials 32 (43), 2003567, 2020
Graphene via contact architecture for vertical integration of vdW heterostructure devices
Y Shin, J Kwon, Y Jeong, K Watanabe, T Taniguchi, S Im, GH Lee
Small 18 (28), 2200882, 2022
Phonon-assisted carrier transport through a lattice-mismatched interface
HS Yoon†, J Oh†, JY Park†, JS Kang, J Kwon, T Cusati, G Fiori, ...
NPG Asia Materials 11, 14, 2019
Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors
H Ryu, DH Kim, J Kwon, SK Park, W Lee, H Seo, K Watanabe, ...
Advanced Electronic Materials 8 (10), 2101370, 2022
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