| Plasma etching: Yesterday, today, and tomorrow VM Donnelly, A Kornblit Journal of Vacuum Science & Technology A 31 (5), 2013 | 856 | 2013 |
| Atomic layer etching with pulsed plasmas VM Donnelly, DJ Economou US Patent App. 12/966,844, 2011 | 600 | 2011 |
| The reaction of fluorine atoms with silicon DL Flamm, VM Donnelly, JA Mucha Journal of Applied Physics 52 (5), 3633-3639, 1981 | 511 | 1981 |
| The design of plasma etchants DL Flamm, VM Donnelly Plasma Chemistry and Plasma Processing 1, 317-363, 1981 | 489 | 1981 |
| Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy JP Chang, ML Green, VM Donnelly, RL Opila, J Eng Jr, J Sapjeta, ... Journal of Applied Physics 87 (9), 4449-4455, 2000 | 324 | 2000 |
| Plasma electron temperatures and electron energy distributions measured by trace rare gases optical emission spectroscopy VM Donnelly Journal of Physics D: Applied Physics 37 (19), R217, 2004 | 297 | 2004 |
| Anisotropic etching of SiO2 in low‐frequency CF4/O2 and NF3/Ar plasmas VM Donnelly, DL Flamm, WC Dautremont‐Smith, DJ Werder Journal of applied physics 55 (1), 242-252, 1984 | 293 | 1984 |
| Basic chemistry and mechanisms of plasma etching DL Flamm, VM Donnelly, DE Ibbotson Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1983 | 250 | 1983 |
| Simulation of a direct current microplasma discharge in helium at atmospheric pressure Q Wang, DJ Economou, VM Donnelly Journal of Applied Physics 100 (2), 2006 | 236 | 2006 |
| Temperature dependence of the near-infrared refractive index of silicon, gallium arsenide, and indium phosphide JA McCaulley, VM Donnelly, M Vernon, I Taha Physical Review B 49 (11), 7408, 1994 | 221 | 1994 |
| Optical emission actinometry and spectral line shapes in rf glow discharges RA Gottscho, VM Donnelly Journal of applied physics 56 (2), 245-250, 1984 | 196 | 1984 |
| Etching techniques JM Cook, VM Donnelly, DL Flamm, DE Ibbotson, JA Mucha US Patent 4,498,953, 1985 | 194 | 1985 |
| Diagnostics of inductively coupled chlorine plasmas: Measurements of the neutral gas temperature VM Donnelly, MV Malyshev Applied Physics Letters 77 (16), 2467-2469, 2000 | 183 | 2000 |
| Determination of electron temperatures in plasmas by multiple rare gas optical emission, and implications for advanced actinometry MV Malyshev, VM Donnelly Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 15 (3 …, 1997 | 182 | 1997 |
| Temperature dependence of InP and GaAs etching in a chlorine plasma VM Donnelly, DL Flamm, CW Tu, DE Ibbotson Journal of the Electrochemical Society 129 (11), 2533, 1982 | 176 | 1982 |
| Spatially resolved diagnostics of an atmospheric pressure direct current helium microplasma Q Wang, I Koleva, VM Donnelly, DJ Economou Journal of Physics D: Applied Physics 38 (11), 1690, 2005 | 175 | 2005 |
| Trace rare gases optical emission spectroscopy: Nonintrusive method for measuring electron temperatures in low-pressure, low-temperature plasmas MV Malyshev, VM Donnelly Physical Review E 60 (5), 6016, 1999 | 159 | 1999 |
| Comparison of XeF2 and F‐atom reactions with Si and SiO2 DE Ibbotson, DL Flamm, JA Mucha, VM Donnelly Applied physics letters 44 (12), 1129-1131, 1984 | 150 | 1984 |
| Crystallographic etching of GaAs with bromine and chlorine plasmas DE Ibbotson, DL Flamm, VM Donnelly Journal of applied physics 54 (10), 5974-5981, 1983 | 144 | 1983 |
| Infrared‐laser interferometric thermometry: A nonintrusive technique for measuring semiconductor wafer temperatures VM Donnelly, JA McCaulley Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (1 …, 1990 | 142 | 1990 |
