Solidification temperature of silicon surface layer melted by pulsed laser irradiation GD Ivlev, EI Gatskevich
Applied surface science 143 (1-4), 265-271, 1999
42 1999 Effect of pulsed laser action on hole-energy spectrum of self-assembled quantum dots AI Yakimov, AV Dvurechenskii, VA Volodin, MD Efremov, AI Nikiforov, ...
Physical Review B 72 (11), 115318, 2005
39 2005 Dynamics of the excimer laser annealing of hydrogenated amorphous silicon thin films G Ivlev, E Gatskevich, V Chab, J Stuchlı́k, V Vorlı́ček, J Kočka
Applied physics letters 75 (4), 498-500, 1999
27 1999 Creation of silicon nanocrystals using the laser ablation in liquid PA Perminov, IO Dzhun, AA Ezhov, SV Zabotnov, LA Golovan, GD Ivlev, ...
Laser Physics 21, 801-804, 2011
22 2011 Melting and solidification of the surface layer of single-crystal silicon heated by pulsed laser radiation EI Gatskevich, GD Ivlev, AM Chaplanov
Quantum Electronics 25 (8), 774, 1995
19 1995 Оптико-пирометрическая диагностика состояния кремния при наноимпульсном лазерном облучении ГД Ивлев, ЕИ Гацкевич
Журнал технической физики 82 (6), 69, 2012
16 2012 Pulsed laser-induced phase transformations in CdTe single crystals E Gatskevich, G Ivlev, P Přikryl, R Černý, V Chab, O Cibulka
Applied surface science 248 (1-4), 259-263, 2005
16 2005 Optical-pyrometric diagnostics of the state of silicon during nanopulsed laser irradiation GD Ivlev, EI Gatskevich
Technical Physics 57, 803-806, 2012
15 2012 Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation VA Volodin, AI Yakimov, AV Dvurechenskiĭ, MD Efremov, AI Nikiforov, ...
Semiconductors 40, 202-209, 2006
15 2006 Phase transformations induced in CdTe single crystal by ruby laser pulsed irradiation GD Ivlev, EI Gatskevich, SP Zhvavyi, R Cerny, P Prikryl, V Chab, ...
Eighth International Conference on Laser and Laser Information Technologies …, 2004
13 2004 Фазовые превращения, инициируемые в тонких слоях аморфного кремния наносекундным воздействием излучения эксимерного лазера ГД Ивлев, ЕИ Гацкевич
Физика и техника полупроводников 37 (5), 622, 2003
13 2003 Doping of cadmium telluride by indium at nanosecond laser irradiation of In/CdTe structure V Veleschuk, A Vlasenko, E Gatskevich, V Gnatyuk, G Ivlev, S Levytskyi, ...
Journal of Materials Science and Engineering B 2 (4), 230-239, 2012
12 2012 Модификация квантовых точек в наноструктурах Ge/Si импульсным лазерным облучением ВА Володин, АИ Якимов, АВ Двуреченский, МД Ефремов, ...
Физика и техника полупроводников 40 (2), 207-214, 2006
12 2006 Modeling the phase-change processes in pulsed laser-irradiated InSb R Černý, V Chab, G Ivlev, E Gatskevich, P Přikryl
Physical Review B 59 (16), 10685, 1999
12 1999 Temperature-induced changes in optical properties of the liquid phase during nanosecond laser melting of silicon and germanium GD Ivlev, EI Gatskevich
Semiconductors 30 (11), 1093-1098, 1996
12 1996 Time-resolved temperature and reflectivity measurements of nanosecond laser-induced melting and crystallization of silicon GD Ivlev, EI Gatskevich, DN Sharaev
Laser-Assisted Microtechnology 2000 4157, 78-81, 2001
11 2001 Ferroelectric Hf0.5 Zr0.5 O2 Thin Films Crystallized by Pulsed Laser Annealing N Volodina, A Dmitriyeva, A Chouprik, E Gatskevich, A Zenkevich
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100082, 2021
10 2021 Pulsed laser annealing of Si–Ge superlattices NA Sobolev, GD Ivlev, EI Gatskevich, JP Leitão, A Fonseca, MC Carmo, ...
Materials Science and Engineering: C 23 (1-2), 19-22, 2003
10 2003 Liquid phase reflectivity under conditions of laser-induced silicon melting GD Ivlev, EI Gatskevich
Semiconductors 34, 759-762, 2000
10 2000 Температурное изменение оптических свойств жидкой фазы при наносекундном лазерном плавлении кремния и германия ГД Ивлев, ЕИ Гацкевич
Физика и техника полупроводников 30 (11), 2097-2107, 1996
10 1996