| Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si AD Bolshakov, VV Fedorov, KY Shugurov, AM Mozharov, GA Sapunov, ... Nanotechnology 30 (39), 395602, 2019 | 34 | 2019 |
| Microlens-enhanced substrate patterning and MBE growth of GaP nanowires AD Bolshakov, LN Dvoretckaia, VV Fedorov, GA Sapunov, AM Mozharov, ... Semiconductors 52, 2088-2091, 2018 | 22 | 2018 |
| Self-catalyzed mbe-grown gap nanowires on si (111): V/iii ratio effects on the morphology and crystal phase switching VV Fedorov, AD Bolshakov, LN Dvoretckaia, GA Sapunov, DA Kirilenko, ... Semiconductors 52, 2092-2095, 2018 | 22 | 2018 |
| Red GaPAs/GaP nanowire-based flexible light-emitting diodes V Neplokh, V Fedorov, A Mozharov, F Kochetkov, K Shugurov, E Moiseev, ... Nanomaterials 11 (10), 2549, 2021 | 12 | 2021 |
| Focused ion beam milling based formation of nanochannels in silicon-glass microfluidic chips for the study of ion transport D Lebedev, G Malyshev, I Ryzhkov, A Mozharov, K Shugurov, V Sharov, ... Microfluidics and Nanofluidics 25 (6), 51, 2021 | 12 | 2021 |
| Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface KY Shugurov, AM Mozharov, AD Bolshakov, VV Fedorov, GA Sapunov, ... Nanotechnology 31 (24), 244003, 2020 | 10 | 2020 |
| Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heterostructure KY Shugurov, RR Reznik, AM Mozharov, KP Kotlyar, OY Koval, ... Materials Science in Semiconductor Processing 90, 20-25, 2019 | 10 | 2019 |
| Novel design strategy for GaAs‐based solar cell by application of single‐walled carbon nanotubes topmost layer DM Mitin, AD Bolshakov, V Neplokh, AM Mozharov, SA Raudik, ... Energy Science & Engineering 8 (8), 2938-2945, 2020 | 7 | 2020 |
| Single GaN Nanowires for Extremely High Current Commutation K Shugurov, A Mozharov, G Sapunov, V Fedorov, M Tchernycheva, ... physica status solidi (RRL)–Rapid Research Letters 15 (4), 2000590, 2021 | 4 | 2021 |
| Influence of interface layer preparation on the electrical and spectral characteristics of GaN/Si solar cells KU Shugurov, AM Mozharov, GA Sapunov, VV Fedorov, AD Bolshakov, ... Journal of Physics: Conference Series 993 (1), 012034, 2018 | 4 | 2018 |
| Influence of wet etching in KOH on defects in silicon nanowires formed by cryogenic dry etching AI Baranov, DA Kudryashov, IA Morozov, AV Uvarov, KY Shugurov, ... Journal of Physics: Conference Series 1697 (1), 012060, 2020 | 3 | 2020 |
| Capacitance characterization of silicon nanowires formed by cryogenic dry etching AI Baranov, DA Kudryashov, LN Dvoretckaia, IA Morozov, AV Uvarov, ... Journal of Physics: Conference Series 1695 (1), 012089, 2020 | 2 | 2020 |
| Extremely high frequency Schottky diodes based on single GaN nanowires KY Shugurov, AM Mozharov, VV Fedorov, SA Blokhin, VV Neplokh, ... Nanotechnology 34 (24), 245204, 2023 | 1 | 2023 |
| Numerical study of Schottky diode based on single GaN NW on Si KY Shugurov, AM Mozharov, IS Mukhin Journal of Physics: Conference Series 1695 (1), 012172, 2020 | 1 | 2020 |
| GaN-nanowire/Si solar cell: numerical modeling, fabrication and characterization KY Shugurov, AM Mozharov, GA Sapunov, VV Fedorov, AD Bolshakov, ... Journal of Physics: Conference Series 1199 (1), 012030, 2019 | 1 | 2019 |
| High-speed MBE-grown 1550 nm wafer-fused VCSELs G Sapunov, SC Tian, S Blokhin, I Kovach, D Papylev, S Rochas, ... Vertical-Cavity Surface-Emitting Lasers XXVIII 12904, 156-163, 2024 | | 2024 |
| Microwave Schottky Diodes based on Single GaN Nanowires KY Shugurov, AM Mozharov, GA Sapunov, VV Fedorov, EI Moiseev, ... Technical Physics Letters 49 (Suppl 4), S346-S349, 2023 | | 2023 |
| Study of the electrical properties of InAs nanowires/Si substrate for IR photodetector AM Mozharov, VV Fedorov, KY Shugurov, AA Vorobyev, DA Kudryashov 2022 International Conference Laser Optics (ICLO), 1-1, 2022 | | 2022 |
| Study of Schottky Diodes Based on an Array of Silicon Wires Obtained by Cryogenic Dry Etching AI Baranov, DA Kudryashov, AV Uvarov, IA Morozov, KY Shugurov, ... Technical Physics Letters 48 (2), 23-26, 2022 | | 2022 |
| ÑÂÅÐÕÂÛÑÎÊÎ×ÀÑÒÎÒÍÛÅ ÄÈÎÄÛ ØÎÒÒÊÈ ÍÀ ÎÑÍÎÂÅ ÎÄÈÍÎ×ÍÛÕ ÍÈÒÅÂÈÄÍÛÕ ÍÀÍÎÊÐÈÑÒÀËËΠGAN ÊÞ ØÓÃÓÐÎÂ, ÀÌ ÌÎÆÀÐÎÂ, ÃÀ ÑÀÏÓÍÎÂ,  ԨÄÎÐÎÂ, ... ÏÈÑÜÌÀ  ÆÓÐÍÀË ÒÅÕÍÈ×ÅÑÊÎÉ ÔÈÇÈÊÈ 48 (15), 22-25, 2022 | | 2022 |
Alexey MozharovSt Petersburg Academic UniversityVerified email at spbau.ru
