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Valery Yu. Davydov
Valery Yu. Davydov
Dr. Sci., Chief Researcher, Ioffe Institute
Verified email at mail.ioffe.ru
Title
Cited by
Cited by
Year
Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
physica status solidi (b) 229 (3), r1-r3, 2002
13962002
Phonon dispersion and Raman scattering in hexagonal GaN and AlN
VY Davydov, YE Kitaev, IN Goncharuk, AN Smirnov, J Graul, ...
Physical Review B 58 (19), 12899, 1998
9061998
Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6HSiC
VY Davydov, NS Averkiev, IN Goncharuk, DK Nelson, IP Nikitina, ...
Journal of applied physics 82 (10), 5097-5102, 1997
4591997
Band gap of hexagonal InN and InGaN alloys
VY Davydov, AA Klochikhin, VV Emtsev, DA Kurdyukov, SV Ivanov, ...
physica status solidi (b) 234 (3), 787-795, 2002
4382002
Band Gap of InN and In‐Rich InxGa1xN alloys (0.36 < x < 1)
VY Davydov, AA Klochikhin, VV Emtsev, SV Ivanov, VV Vekshin, ...
physica status solidi (b) 230 (2), R4-R6, 2002
4322002
Experimental and theoretical studies of phonons in hexagonal InN
VY Davydov, VV Emtsev, IN Goncharuk, AN Smirnov, VD Petrikov, ...
Applied physics letters 75 (21), 3297-3299, 1999
3291999
Acceptor states in the photoluminescence spectra of
AA Klochikhin, VY Davydov, VV Emtsev, AV Sakharov, VA Kapitonov, ...
Physical Review B 71 (19), 195207, 2005
1802005
Composition dependence of optical phonon energies and Raman line broadening in hexagonal Al x Ga 1− x N alloys
VY Davydov, IN Goncharuk, AN Smirnov, AE Nikolaev, WV Lundin, ...
Physical Review B 65 (12), 125203, 2002
1742002
Phonon structure of InN grown by atomic layer epitaxy
T Inushima, T Shiraishi, VY Davydov
Solid state communications 110 (9), 491-495, 1999
1571999
Diamond-graphite phase transition in ultradisperse-diamond clusters
AE Aleksenskii, MV Baidakova, AY Vul, VY Davydov, YA Pevtsova
Physics of the Solid State 39, 1007-1015, 1997
1421997
InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
J Aderhold, VY Davydov, F Fedler, H Klausing, D Mistele, T Rotter, ...
Journal of crystal growth 222 (4), 701-705, 2001
1412001
Energy gap and optical properties of InxGa1xN
F Bechstedt, J Furthmüller, M Ferhat, LK Teles, LMR Scolfaro, JR Leite, ...
physica status solidi (a) 195 (3), 628-633, 2003
1362003
Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
AG Bhuiyan, K Sugita, K Kasashima, A Hashimoto, A Yamamoto, ...
Applied physics letters 83 (23), 4788-4790, 2003
1262003
Phys. Status Solidi B https://doi. org/10.1002/1521-3951 (200202) 229: 3< R1:: AID-PSSB99991> 3.0. CO; 2-O 229
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
R1, 2002
1192002
Phase transition-governed opalVO2 photonic crystal
VG Golubev, VY Davydov, NF Kartenko, DA Kurdyukov, AV Medvedev, ...
Applied Physics Letters 79 (14), 2127-2129, 2001
1172001
Graphene based sensor for environmental monitoring of NO2
S Novikov, N Lebedeva, A Satrapinski, J Walden, V Davydov, A Lebedev
Sensors and Actuators B: Chemical 236, 1054-1060, 2016
1022016
Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer
CH Shen, HY Chen, HW Lin, S Gwo, AA Klochikhin, VY Davydov
Applied physics letters 88 (25), 2006
1022006
Electronic and vibrational states in InN and InxGa1−x N solid solutions
VY Davydov, AA Klochikhin
Semiconductors 38, 861-898, 2004
100*2004
Rehybridization of carbon on facets of detonation diamond nanocrystals and forming hydrosols of individual particles
AT Dideikin, AE Aleksenskii, MV Baidakova, PN Brunkov, ...
Carbon 122, 737-745, 2017
942017
Physical properties of bulk GaN crystals grown by HVPE
YV Melnik, KV Vassilevski, IP Nikitina, AI Babanin, VY Davydov, ...
MRS Internet Journal of Nitride Semiconductor Research 2, 1-9, 1997
821997
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