| Multilevel resistive switching with ionic and metallic filaments M Liu, Z Abid, W Wang, X He, Q Liu, W Guan Applied Physics Letters 94 (23), 2009 | 178 | 2009 |
| Design considerations for variation tolerant multilevel CMOS/Nano memristor memory H Manem, GS Rose, X He, W Wang Proceedings of the 20th symposium on Great lakes symposium on VLSI, 287-292, 2010 | 114 | 2010 |
| Proton-based total-dose irradiation effects on Cu/HfO2: Cu/Pt ReRAM devices B Butcher, X He, M Huang, Y Wang, Q Liu, H Lv, M Liu, W Wang Nanotechnology 21 (47), 475206, 2010 | 64 | 2010 |
| Impact of aggressive fin width scaling on FinFET device characteristics X He, J Fronheiser, P Zhao, Z Hu, S Uppal, X Wu, Y Hu, R Sporer, L Qin, ... 2017 IEEE International Electron Devices Meeting (IEDM), 20.2. 1-20.2. 4, 2017 | 50 | 2017 |
| Superior TID Hardness in TiN/HfO _ {2}/TiN ReRAMs After Proton Radiation X He, W Wang, B Butcher, S Tanachutiwat, RE Geer IEEE Transactions on Nuclear Science 59, 2550-2555, 2012 | 49 | 2012 |
| Synthesis and characterization of room-temperature ferromagnetism in Fe-and Ni-co-doped In2O3 X Li, C Xia, G Pei, X He Journal of Physics and Chemistry of Solids 68 (10), 1836-1840, 2007 | 42 | 2007 |
| Synthesis of vertically oriented GaN nanowires on a LiAlO2 substrate via chemical vapor deposition X He, G Meng, X Zhu, M Kong Nano Research 2 (4), 321-326, 2009 | 18 | 2009 |
| Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices S Yamaguchi, Z Bayindir, X He, S Uppal, P Srinivasan, C Yong, D Choi, ... Microelectronics Reliability 72, 80-84, 2017 | 17 | 2017 |
| Enhancement of ferromagnetic properties in In1. 99Co0. 01O3 by additional Cu doping X Li, C Xia, X He, X Gao, S Liang, G Pei, Y Dong Scripta Materialia 58 (3), 171-174, 2008 | 16 | 2008 |
| Influence of stress induced CT local layout effect (LLE) on 14nm FinFET P Zhao, SM Pandey, E Banghart, X He, R Asra, V Mahajan, H Zhang, ... 2017 Symposium on VLSI Technology, T228-T229, 2017 | 14 | 2017 |
| Electrochemical synthesis and magnetic properties of single-crystal and netlike poly-crystal Ni nanowire arrays G Yue, Q Xu, G Meng, X He, F Han, L Zhang Journal of alloys and compounds 477 (1-2), L30-L34, 2009 | 14 | 2009 |
| Heavy ion radiation effects on TiN/HfO2/W resistive random access memory X He, RE Geer 2013 IEEE Aerospace Conference, 1-7, 2013 | 12 | 2013 |
| Study on nitridation processes of beta-Ga2O3 single crystal X Li, C Xia, X He, G Pei, J Zhang, J Xu Chinese Optics Letters 6 (4), 282-285, 2008 | 12 | 2008 |
| Processing and functionalization of conductive substoichiometric TiO2 catalyst supports for PEM fuel cell applications R Phillips, A O’Toole, X He, R Hansen, R Geer, E Eisenbraun Journal of Materials Research 1 (1), 1-7, 2013 | 11 | 2013 |
| Structure and magnetic properties of CoNiP nanowire arrays embedded in AAO template X He, G Yue, Y Hao, Q Xu, Q Wei, X Zhu, M Kong, L Zhang, X Li Journal of crystal growth 310 (15), 3579-3583, 2008 | 11 | 2008 |
| A 12nm FinFET technology featuring 2nd generation FinFET for low power and high performance applications HC Lo, D Choi, Y Hu, Y Shen, Y Qi, J Peng, D Zhou, M Mohan, C Yong, ... 2018 IEEE Symposium on VLSI Technology, 215-216, 2018 | 10 | 2018 |
| Fast diffusers in a thermal gradient (solder ball) JR Lloyd, NA Connelly, X He, KJ Ryan, BH Wood Microelectronics Reliability 50 (9-11), 1355-1358, 2010 | 6 | 2010 |
| Universal-ion irradiation dose threshold and error recovery in HfO2 resistance random access memory X He, RE Geer 2014 IEEE Aerospace Conference, 1-6, 2014 | 4 | 2014 |
| Advanced RMG module to improve AC/DC performance for 14nm FinFETs and beyond M Togo, M Joshi, HV Meer, Y Liu, C Yong, B Liu, X He, X Wu, SY Mun, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 2 | 2014 |
| High total-dose proton radiation tolerance in tin/hfo2/tin reram devices X He, RE Geer MRS Online Proceedings Library (OPL) 1430, mrss12-1430-e09-02, 2012 | 2 | 2012 |
