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Andreas Roelofs
Andreas Roelofs
Director, Center for Integrated Nanotechnologies, Los Alamos National Laboratory
Подтвержден адрес электронной почты в домене lanl.gov - Главная страница
Название
Процитировано
Процитировано
Год
Nanoelectronics and Information Technology
R Waser
WILEY-VCH, 2012
1427*2012
Tunable transport gap in phosphorene
S Das, W Zhang, M Demarteau, A Hoffmann, M Dubey, A Roelofs
Nano letters 14 (10), 5733-5739, 2014
7692014
All two-dimensional, flexible, transparent, and thinnest thin film transistor
S Das, R Gulotty, AV Sumant, A Roelofs
Nano letters 14 (5), 2861-2866, 2014
4532014
Ambipolar phosphorene field effect transistor
S Das, M Demarteau, A Roelofs
ACS nano 8 (11), 11730-11738, 2014
4412014
Differentiating 180 and 90 switching of ferroelectric domains with three-dimensional piezoresponse force microscopy
A Roelofs, U Böttger, R Waser, F Schlaphof, S Trogisch, LM Eng
Applied Physics Letters 77 (21), 3444-3446, 2000
2272000
Piezoresponse force microscopy of lead titanate nanograins possibly reaching the limit of ferroelectricity
A Roelofs, T Schneller, K Szot, R Waser
Applied Physics Letters 81 (27), 5231-5233, 2002
2172002
Imaging three-dimensional polarization in epitaxial polydomain ferroelectric thin films
CS Ganpule, V Nagarajan, BK Hill, AL Roytburd, ED Williams, R Ramesh, ...
Journal of applied physics 91 (3), 1477-1481, 2002
1962002
Review of ferroelectric domain imaging by piezoresponse force microscopy
AL Kholkin, SV Kalinin, A Roelofs, A Gruverman
Scanning Probe Microscopy: Electrical and Electromechanical Phenomena at the …, 2007
1822007
Nanosize ferroelectric oxides–tracking down the superparaelectric limit
A Rüdiger, T Schneller, A Roelofs, S Tiedke, T Schmitz, R Waser
Applied Physics A 80, 1247-1255, 2005
1552005
Non-volatile resistive sense memory with praseodymium calcium manganese oxide
A Roelofs, M Siegert, V Vaithyanathan, W Tian, Y Ahn, M Balakrishnan, ...
US Patent 8,227,783, 2012
1272012
Depolarizing-field-mediated 180 switching in ferroelectric thin films with 90 domains
A Roelofs, NA Pertsev, R Waser, F Schlaphof, LM Eng, C Ganpule, ...
Applied physics letters 80 (8), 1424-1426, 2002
1262002
High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors
S Das, M Dubey, A Roelofs
Applied Physics Letters 105 (8), 2014
1112014
Nb-doped single crystalline MoS2 field effect transistor
S Das, M Demarteau, A Roelofs
Applied Physics Letters 106 (17), 2015
1052015
Towards the limit of ferroelectric nanosized grains
A Roelofs, T Schneller, K Szot, R Waser
Nanotechnology 14 (2), 250, 2003
1022003
Pushing towards the digital storage limit
R Waser, A Rüdiger
Nature materials 3 (2), 81-82, 2004
1012004
Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope
S Tiedke, T Schmitz, K Prume, A Roelofs, T Schneller, U Kall, R Waser, ...
Applied Physics Letters 79 (22), 3678-3680, 2001
1012001
Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb (Zr0. 52, Ti0. 48) O3 thin films
MD Nguyen, M Dekkers, E Houwman, R Steenwelle, X Wan, A Roelofs, ...
Applied Physics Letters 99 (25), 2011
862011
Scanning probe microscopy: electrical and electromechanical phenomena at the nanoscale
AL Kholkin, SV Kalinin, A Roelofs, A Gruverman, S Kalinin
Springer 1, 173, 2007
782007
Critical thickness for extrinsic contributions to the dielectric and piezoelectric response in lead zirconate titanate ultrathin films
Y Bastani, T Schmitz-Kempen, A Roelofs, N Bassiri-Gharb
Journal of Applied Physics 109 (1), 2011
772011
Ferroelectric probe storage apparatus
MI Lutwyche, EC Johns, MG Forrester, MD Bedillion, AK Roelofs, ...
US Patent 7,447,140, 2008
702008
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