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Pierre Noé
Pierre Noé
Research scientist, CEA Grenoble, LETI
Подтвержден адрес электронной почты в домене cea.fr
Название
Процитировано
Процитировано
Год
Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues
P Noé, C Vallée, F Hippert, F Fillot, JY Raty
Semiconductor Science and Technology 33 (1), 013002, 2017
2012017
Spin injection in silicon at zero magnetic field
L Grenet, M Jamet, P Noé, V Calvo, JM Hartmann, LE Nistor, B Rodmacq, ...
Applied Physics Letters 94 (3), 032502, 2009
692009
Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed
P Noé, A Verdy, F d’Acapito, JB Dory, M Bernard, G Navarro, JB Jager, ...
Science advances 6 (9), eaay2830, 2020
672020
Trade-off between SET and data retention performance thanks to innovative materials for phase-change memory
G Navarro, M Coué, A Kiouseloglou, P Noé, F Fillot, V Delaye, A Persico, ...
2013 IEEE International Electron Devices Meeting, 21.5. 1-21.5. 4, 2013
652013
Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method
O Demichel, V Calvo, A Besson, P Noé, B Salem, N Pauc, F Oehler, ...
Nano letters 10 (7), 2323-2329, 2010
652010
Impact of interfaces on scenario of crystallization of phase change materials
P Noé, C Sabbione, N Bernier, N Castellani, F Fillot, F Hippert
Acta Materialia 110, 142-148, 2016
642016
Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2Te3 Superlattices Used in Interfacial Phase‐Change Memory (iPCM) Devices
P Kowalczyk, F Hippert, N Bernier, C Mocuta, C Sabbione, ...
Small 14 (24), 1704514, 2018
412018
Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance
V Sousa, G Navarro, N Castellani, M Coue, O Cueto, C Sabbione, P Noe, ...
2015 Symposium on VLSI Technology (VLSI Technology), T98-T99, 2015
382015
In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission …
R Berthier, N Bernier, D Cooper, C Sabbione, F Hippert, P Noé
Journal of Applied Physics 122 (11), 115304, 2017
372017
Recombination dynamics of spatially confined electron− hole system in luminescent gold catalyzed silicon nanowires
O Demichel, V Calvo, N Pauc, A Besson, P Noé, F Oehler, P Gentile, ...
Nano letters 9 (7), 2575-2578, 2009
342009
Lowering the reset current and power consumption of phase-change memories with carbon-doped Ge2Sb2Te5
Q Hubert, C Jahan, A Toffoli, G Navarro, S Chandrashekar, P Noe, ...
2012 4th IEEE International Memory Workshop, 1-4, 2012
332012
High-Q silica microcavities on a chip: From microtoroid to microsphere
JB Jager, V Calvo, E Delamadeleine, E Hadji, P Noé, T Ricart, D Bucci, ...
Applied Physics Letters 99 (18), 181123, 2011
332011
Innovative PCM+ OTS device with high sub-threshold non-linearity for non-switching reading operations and higher endurance performance
G Navarro, A Verdy, N Castellani, G Bourgeois, V Sousa, G Molas, ...
2017 Symposium on VLSI Technology, T94-T95, 2017
322017
Structural change with the resistance drift phenomenon in amorphous GeTe phase change materials’ thin films
P Noé, C Sabbione, N Castellani, G Veux, G Navarro, V Sousa, F Hippert, ...
Journal of Physics D: Applied Physics 49 (3), 035305, 2015
322015
Enhancement of the photoluminescence of silicon oxide defect states by combining silicon oxide with silicon nanowires
P Noe, J Guignard, P Gentile, E Delamadeleine, V Calvo, P Ferret, ...
Journal of applied physics 102 (1), 016103, 2007
312007
Efficient coupling of -doped silicon-rich oxide to microdisk whispering gallery modes
J Verbert, F Mazen, T Charvolin, E Picard, V Calvo, P Noé, JM Gérard, ...
Applied Physics Letters 86 (11), 111117, 2005
302005
Vibrational properties and stabilization mechanism of the amorphous phase of doped GeTe
JY Raty, P Noé, G Ghezzi, S Maîtrejean, C Bichara, F Hippert
Physical Review B 88 (1), 014203, 2013
292013
Improved electrical performance thanks to Sb and N doping in Se-rich GeSe-based OTS selector devices
A Verdy, G Navarro, V Sousa, P Noe, M Bernard, F Fillot, G Bourgeois, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
272017
Photoluminescence of confined electron-hole plasma in core-shell silicon/silicon oxide nanowires
O Demichel, F Oehler, P Noé, V Calvo, N Pauc, P Gentile, T Baron, ...
Applied Physics Letters 93 (21), 213104, 2008
252008
Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition
O Demichel, F Oehler, V Calvo, P Noé, N Pauc, P Gentile, P Ferret, ...
Physica E: Low-dimensional Systems and Nanostructures 41 (6), 963-965, 2009
232009
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