| Enhanced Inversion Mobility on 4H-SiCUsing Phosphorus and Nitrogen Interface Passivation G Liu, AC Ahyi, Y Xu, T Isaacs-Smith, YK Sharma, JR Williams, ... IEEE Electron Device Letters 34 (2), 181-183, 2013 | 129 | 2013 |
| Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC J Crofton, SE Mohney, JR Williams, T Isaacs-Smith Solid-State Electronics 46 (1), 109-113, 2002 | 109 | 2002 |
| Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the 4H–SiC interface S Dhar, YW Song, LC Feldman, T Isaacs-Smith, CC Tin, JR Williams, ... Applied physics letters 84 (9), 1498-1500, 2004 | 106 | 2004 |
| Interface trap passivation for SiO2∕(0001) C-terminated 4H-SiC S Dhar, LC Feldman, S Wang, T Isaacs-Smith, JR Williams Journal of Applied Physics 98 (1), 2005 | 102 | 2005 |
| High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer YK Sharma, AC Ahyi, T Isaacs-Smith, A Modic, M Park, Y Xu, ... IEEE Electron Device Letters 34 (2), 175-177, 2013 | 94 | 2013 |
| Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Y Zhou, C Ahyi, T Isaacs-Smith, M Bozack, CC Tin, J Williams, M Park, ... Solid-State Electronics 52 (5), 756-764, 2008 | 83 | 2008 |
| Si/SiO2 and SiC/SiO2 interfaces for MOSFETs–challenges and advances ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ... Materials science forum 527, 935-948, 2006 | 73 | 2006 |
| Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC XD Chen, S Dhar, T Isaacs-Smith, JR Williams, LC Feldman, PM Mooney Journal of Applied Physics 103 (3), 2008 | 72 | 2008 |
| Nitrogen and hydrogen induced trap passivation at the SiO2/4H-SiC interface S Dhar, SR Wang, AC Ahyi, T Isaacs-Smith, ST Pantelides, JR Williams, ... Materials science forum 527, 949-954, 2006 | 63 | 2006 |
| Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors MJ Marinella, DK Schroder, T Isaacs-Smith, AC Ahyi, JR Williams, ... Applied Physics Letters 90 (25), 2007 | 54 | 2007 |
| 10kV trench gate IGBTs on 4H-SiC Q Zhang, HR Chang, M Gomez, C Bui, E Hanna, JA Higgins, ... Proceedings. ISPSD'05. The 17th International Symposium on Power …, 2005 | 49 | 2005 |
| High-voltage UMOSFETs in 4H SiC IA Khan, JA Cooper, MA Capano, T Isaacs-Smith, JR Williams Proceedings of the 14th International Symposium on Power Semiconductor …, 2002 | 46 | 2002 |
| The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors T Chen, Z Luo, JD Cressler, TF Isaacs-Smith, JR Williams, G Chung, ... Solid-State Electronics 46 (12), 2231-2235, 2002 | 45 | 2002 |
| High temperature implant activation in 4H and 6H-SiC in a silane ambient to reduce step bunching SE Saddow, J Williams, T Isaacs-Smith, MA Capano, JA Cooper, ... Materials Science Forum 338, 901-904, 2000 | 41 | 2000 |
| Nitrogen passivation of deposited oxides on n 4H–SiC GY Chung, JR Williams, T Isaacs-Smith, F Ren, K McDonald, LC Feldman Applied physics letters 81 (22), 4266-4268, 2002 | 39 | 2002 |
| Improved ohmic contact to n-type 4H and 6H-SiC using nichrome ED Luckowski, JM Delucca, JR Williams, SE Mohney, MJ Bozack, ... Journal of electronic materials 27, 330-334, 1998 | 37 | 1998 |
| Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures TN Oder, P Martin, AV Adedeji, T Isaacs-Smith, JR Williams Journal of electronic materials 36, 805-811, 2007 | 33 | 2007 |
| Carrier generation lifetimes in 4H-SiC MOS capacitors MJ Marinella, DK Schroder, G Chung, MJ Loboda, T Isaacs-Smith, ... IEEE Transactions on Electron Devices 57 (8), 1910-1923, 2010 | 28 | 2010 |
| Structure and magnetic properties of electrodeposited Ni films on n-GaAs (001) C Scheck, P Evans, R Schad, G Zangari, JR Williams, TF Isaacs-Smith Journal of Physics: Condensed Matter 14 (47), 12329, 2002 | 28 | 2002 |
| Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs annealed in O2, N2O, NO and CO2 W Wang, S Banerjee, TP Chow, RJ Gutmann, T Isaacs-Smith, JR Williams, ... Materials Science Forum 457, 1309-1312, 2004 | 23 | 2004 |
