| Nitride-based semiconductors for blue and green light-emitting devices FA Ponce, DP Bour nature 386 (6623), 351-359, 1997 | 2043 | 1997 |
| High dislocation densities in high efficiency GaN‐based light‐emitting diodes SD Lester, FA Ponce, MG Craford, DA Steigerwald Applied Physics Letters 66 (10), 1249-1251, 1995 | 1444 | 1995 |
| Defects in single-crystal silicon induced by hydrogenation NM p Johnson, FA Ponce, RA Street, RJ Nemanich Physical Review B 35 (8), 4166, 1987 | 596 | 1987 |
| Spatial distribution of the luminescence in GaN thin films FA Ponce, DP Bour, W Götz, PJ Wright Applied physics letters 68 (1), 57-59, 1996 | 499 | 1996 |
| Luminescence from stacking faults in gallium nitride R Liu, A Bell, FA Ponce, CQ Chen, JW Yang, MA Khan Applied Physics Letters 86 (2), 2005 | 427 | 2005 |
| Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires HI Liu, DK Biegelsen, FA Ponce, NM Johnson, RFW Pease Applied physics letters 64 (11), 1383-1385, 1994 | 391 | 1994 |
| Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers FA Ponce, DP Bour, WT Young, M Saunders, JW Steeds Applied physics letters 69 (3), 337-339, 1996 | 323 | 1996 |
| Epitaxial MgO on Si (001) for Y‐Ba‐Cu‐O thin‐film growth by pulsed laser deposition DK Fork, FA Ponce, JC Tramontana, TH Geballe Applied Physics Letters 58 (20), 2294-2296, 1991 | 315 | 1991 |
| Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence D Cherns, SJ Henley, FA Ponce Applied Physics Letters 78 (18), 2691-2693, 2001 | 309 | 2001 |
| Solid State Light Emitting Device FA Ponce, S Srinivasan, H Omiya US Patent App. 11/886,027, 2009 | 267 | 2009 |
| Slip systems and misfit dislocations in InGaN epilayers S Srinivasan, L Geng, R Liu, FA Ponce, Y Narukawa, S Tanaka Applied Physics Letters 83 (25), 5187-5189, 2003 | 260 | 2003 |
| Microstructure of GaN epitaxy on SiC using AlN buffer layers FA Ponce, BS Krusor, JS Major Jr, WE Plano, DF Welch Applied physics letters 67 (3), 410-412, 1995 | 253 | 1995 |
| Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques FA Ponce, D Cherns, WT Young, JW Steeds Applied physics letters 69 (6), 770-772, 1996 | 248 | 1996 |
| Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer S Choi, HJ Kim, SS Kim, J Liu, J Kim, JH Ryou, RD Dupuis, AM Fischer, ... Applied Physics Letters 96 (22), 2010 | 245 | 2010 |
| Defects and interfaces in GaN epitaxy FA Ponce MRS bulletin 22 (2), 51-57, 1997 | 237 | 1997 |
| MOVPE growth of GaN on Si (1 1 1) substrates A Dadgar, M Poschenrieder, J Bläsing, O Contreras, F Bertram, ... Journal of Crystal Growth 248, 556-562, 2003 | 221 | 2003 |
| Self‐limiting oxidation of Si nanowires HI Liu, DK Biegelsen, NM Johnson, FA Ponce, RFW Pease Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 218 | 1993 |
| Microstructure and electronic properties of InGaN alloys FA Ponce, S Srinivasan, A Bell, L Geng, R Liu, M Stevens, J Cai, H Omiya, ... physica status solidi (b) 240 (2), 273-284, 2003 | 206 | 2003 |
| Initial stages of epitaxial growth of GaAs on (100) silicon DK Biegelsen, FA Ponce, AJ Smith, JC Tramontana Journal of applied physics 61 (5), 1856-1859, 1987 | 195 | 1987 |
| Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers FA Ponce, JS Major Jr, WE Plano, DF Welch Applied physics letters 65 (18), 2302-2304, 1994 | 186 | 1994 |
Alec M FischerArizona State UniversityVerified email at asu.edu
