| Polarization effects in nitride semiconductors and device structures H Morkoç, R Cingolani, B Gil Material Research Innovations 3, 97-106, 1999 | 1478 | 1999 |
| Hexagonal boron nitride is an indirect bandgap semiconductor G Cassabois, P Valvin, B Gil Nature photonics 10 (4), 262-266, 2016 | 1266 | 2016 |
| Photonics with hexagonal boron nitride JD Caldwell, I Aharonovich, G Cassabois, JH Edgar, B Gil, DN Basov Nature Reviews Materials 4 (8), 552-567, 2019 | 748 | 2019 |
| Group Ill Nitride Semiconductor Compounds B Gil Group III Nitride Semiconductor Compounds–Physics and Applications, 1998 | 566 | 1998 |
| Quantum confined Stark effect due to built-in internal polarization fields in (Al, Ga) N/GaN quantum wells M Leroux, N Grandjean, M Laügt, J Massies, B Gil, P Lefebvre, ... Physical Review B 58 (20), R13371, 1998 | 463 | 1998 |
| ZnO as a material mostly adapted for the realization of room-temperature polariton lasers M Zamfirescu, A Kavokin, B Gil, G Malpuech, M Kaliteevski Physical Review B 65 (16), 161205, 2002 | 457 | 2002 |
| Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry B Gil, O Briot, RL Aulombard Physical Review B 52 (24), R17028, 1995 | 413 | 1995 |
| High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy P Lefebvre, A Morel, M Gallart, T Taliercio, J Allègre, B Gil, H Mathieu, ... Applied Physics Letters 78 (9), 1252-1254, 2001 | 314 | 2001 |
| Barrier-width dependence of group-III nitrides quantum-well transition energies M Leroux, N Grandjean, J Massies, B Gil, P Lefebvre, P Bigenwald Physical Review B 60 (3), 1496, 1999 | 268 | 1999 |
| Direct band-gap crossover in epitaxial monolayer boron nitride C Elias, P Valvin, T Pelini, A Summerfield, CJ Mellor, TS Cheng, L Eaves, ... Nature communications 10 (1), 2639, 2019 | 243 | 2019 |
| Internal electric field in wurtzite quantum wells C Morhain, T Bretagnon, P Lefebvre, X Tang, P Valvin, T Guillet, B Gil, ... Physical Review B—Condensed Matter and Materials Physics 72 (24), 241305, 2005 | 243 | 2005 |
| Raman determination of phonon deformation potentials in α-GaN F Demangeot, J Frandon, MA Renucci, O Briot, B Gil, RL Aulombard Solid state communications 100 (4), 207-210, 1996 | 240 | 1996 |
| Efficient single photon emission from a high-purity hexagonal boron nitride crystal LJ Martínez, T Pelini, V Waselowski, JR Maze, B Gil, G Cassabois, ... Physical review B 94 (12), 121405, 2016 | 221 | 2016 |
| Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl) N quantum wells P Lefebvre, J Allègre, B Gil, H Mathieu, N Grandjean, M Leroux, J Massies, ... Physical Review B 59 (23), 15363, 1999 | 192 | 1999 |
| Photon Bloch oscillations in porous silicon optical superlattices V Agarwal, JA Del Río, G Malpuech, M Zamfirescu, A Kavokin, D Coquillat, ... Physical review letters 92 (9), 097401, 2004 | 171 | 2004 |
| Optical properties of GaN epilayers on sapphire M Tchounkeu, O Briot, B Gil, JP Alexis, RL Aulombard Journal of applied physics 80 (9), 5352-5360, 1996 | 158 | 1996 |
| Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors H Morkoç, R Cingolani, B Gil Solid-State Electronics 43 (10), 1909-1927, 1999 | 151 | 1999 |
| Radiative lifetime of a single electron-hole pair in quantum dots T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ... Physical Review B—Condensed Matter and Materials Physics 73 (11), 113304, 2006 | 150 | 2006 |
| Polariton lasing in a hybrid bulk ZnO microcavity T Guillet, M Mexis, J Levrat, G Rossbach, C Brimont, T Bretagnon, B Gil, ... Applied Physics Letters 99 (16), 2011 | 149 | 2011 |
| III-Nitride Semiconductors and their Modern Devices B Gil OUP Oxford, 2013 | 143 | 2013 |
