Vertical full-colour micro-LEDs via 2D materials-based layer transfer J Shin, H Kim, S Sundaram, J Jeong, BI Park, CS Chang, J Choi, T Kim, ... Nature 614 (7946), 81-87, 2023 | 98 | 2023 |
Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy SH Bae, K Lu, Y Han, S Kim, K Qiao, C Choi, Y Nie, H Kim, HS Kum, ... Nature nanotechnology 15 (4), 272-276, 2020 | 94 | 2020 |
Impact of 2D–3D heterointerface on remote epitaxial interaction through graphene H Kim, K Lu, Y Liu, HS Kum, KS Kim, K Qiao, SH Bae, S Lee, YJ Ji, ... ACS nano 15 (6), 10587-10596, 2021 | 67 | 2021 |
Reconfigurable heterogeneous integration using stackable chips with embedded artificial intelligence C Choi, H Kim, JH Kang, MK Song, H Yeon, CS Chang, JM Suh, J Shin, ... Nature Electronics 5 (6), 386-393, 2022 | 65 | 2022 |
Graphene buffer layer on SiC as a release layer for high-quality freestanding semiconductor membranes K Qiao, Y Liu, C Kim, RJ Molnar, T Osadchy, W Li, X Sun, H Li, ... Nano letters 21 (9), 4013-4020, 2021 | 43 | 2021 |
Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction H Kim, S Lee, J Shin, M Zhu, M Akl, K Lu, NM Han, Y Baek, CS Chang, ... Nature Nanotechnology 17 (10), 1054-1059, 2022 | 38 | 2022 |
Role of transferred graphene on atomic interaction of GaAs for remote epitaxy H Kim, JC Kim, Y Jeong, J Yu, K Lu, D Lee, N Kim, HY Jeong, J Kim, ... Journal of Applied Physics 130 (17), 2021 | 27 | 2021 |
High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process H Kim, Y Liu, K Lu, CS Chang, D Sung, M Akl, K Qiao, KS Kim, BI Park, ... Nature nanotechnology 18 (5), 464-470, 2023 | 20 | 2023 |
Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN J Gong, K Lu, J Kim, TK Ng, D Kim, J Zhou, D Liu, J Kim, BS Ooi, Z Ma Japanese Journal of Applied Physics 61 (1), 011003, 2021 | 10 | 2021 |
Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes J Gong, J Zhou, P Wang, TH Kim, K Lu, S Min, R Singh, M Sheikhi, ... Advanced Electronic Materials 9 (5), 2201309, 2023 | 6 | 2023 |
Remote epitaxial interaction through graphene CS Chang, KS Kim, BI Park, J Choi, H Kim, J Jeong, M Barone, N Parker, ... Science Advances 9 (42), eadj5379, 2023 | 4 | 2023 |
Influences of ALD AlO on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors J Gong, J Kim, TK Ng, K Lu, D Kim, J Zhou, D Liu, J Kim, BS Ooi, Z Ma arXiv preprint arXiv:2109.04597, 2021 | 2* | 2021 |
Low-cost, high-efficiency III-V photovoltaics enabled by remote epitaxy through graphene K Lu, H Kim, NM Han, J Kim Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States), 2024 | | 2024 |
Remote Epitaxy: Fundamentals, Challenges, and Opportunities BI Park, J Kim, K Lu, X Zhang, S Lee, JM Suh, DH Kim, H Kim, J Kim Nano letters 24 (10), 2939-2952, 2024 | | 2024 |
Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy DM Roberts, H Kim, EL McClure, K Lu, JS Mangum, AK Braun, AJ Ptak, ... ACS omega 8 (47), 45088-45095, 2023 | | 2023 |
Amorphous 2D Materials–A Novel Platform for Remote Epitaxy and Nanopatterned Epitaxy of III-V Semiconductors with Low Decomposition Temperatures K Lu Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States), 2022 | | 2022 |
Wafer-scale remote epitaxy of III-V semiconductors and applications H Kim, K Lu, S Lee, KS Kim, SH Bae, J Kim Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States), 2021 | | 2021 |
Graphene-assisted spontaneous relaxation and direct CVD growth of graphene on III-V substrate K Lu Massachusetts Institute of Technology, 2020 | | 2020 |
Spontaneous Relaxation towards Dislocation-free Heteroepitaxy SH Bae, K Lu, S Kim, K Qiao, C Choi, H Kim, HS Kum, W Kong, J Shim, ... Nanotechnology, Nanostructure, Nanomaterials, 124, 0 | | |