The real structure of ε-Ga 2 O 3 and its relation to κ-phase I Cora, F Mezzadri, F Boschi, M Bosi, M Čaplovičová, G Calestani, ... CrystEngComm 19 (11), 1509-1516, 2017 | 332 | 2017 |
Amorphisation and surface morphology development at low-energy ion milling A Barna, B Pécz, M Menyhard Ultramicroscopy 70 (3), 161-171, 1998 | 160 | 1998 |
Nickel based ohmic contacts on SiC T Marinova, A Kakanakova-Georgieva, V Krastev, R Kakanakov, ... Materials Science and Engineering: B 46 (1-3), 223-226, 1997 | 152 | 1997 |
Tracks induced by swift heavy ions in semiconductors G Szenes, ZE Horvath, B Pecz, F Paszti, L Toth Physical Review B 65 (4), 045206, 2002 | 144 | 2002 |
Realization of vertical and zigzag single crystalline silicon nanowire architectures VA Sivakov, G Bronstrup, B Pecz, A Berger, GZ Radnoczi, M Krause, ... The Journal of Physical Chemistry C 114 (9), 3798-3803, 2010 | 143 | 2010 |
TEM sample preparation by ion milling/amorphization A Barna, B Pécz, M Menyhard Micron 30 (3), 267-276, 1999 | 135 | 1999 |
Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties J Anaya, S Rossi, M Alomari, E Kohn, L Tóth, B Pécz, KD Hobart, ... Acta Materialia 103, 141-152, 2016 | 133 | 2016 |
Thermal stability of ε-Ga2O3 polymorph R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ... Acta Materialia 140, 411-416, 2017 | 124 | 2017 |
Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy E Frayssinet, B Beaumont, JP Faurie, P Gibart, Z Makkai, B Pécz, ... MRS Internet Journal of Nitride Semiconductor Research 7, 1-7, 2002 | 102 | 2002 |
Crystallization of amorphous-Si films by flash lamp annealing B Pécz, L Dobos, D Panknin, W Skorupa, C Lioutas, N Vouroutzis Applied Surface Science 242 (1-2), 185-191, 2005 | 90 | 2005 |
Diamond overgrown InAlN/GaN HEMT M Alomari, M Dipalo, S Rossi, MA Diforte-Poisson, S Delage, JF Carlin, ... Diamond and Related Materials 20 (4), 604-608, 2011 | 86 | 2011 |
Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC B Pécz, L Tóth, MA di Forte-Poisson, J Vacas Applied Surface Science 206 (1-4), 8-11, 2003 | 83 | 2003 |
Contact formation in SiC devices B Pécz Applied Surface Science 184 (1-4), 287-294, 2001 | 82 | 2001 |
In situ TEM study of κ→ β and κ→ γ phase transformations in Ga2O3 I Cora, Z Fogarassy, R Fornari, M Bosi, A Rečnik, B Pécz Acta Materialia 183, 216-227, 2020 | 79 | 2020 |
Structure of sputtered nanocomposite CrCx∕ aC: H thin films G Gassner, J Patscheider, PH Mayrhofer, E Hegedus, L Toth, I Kovacs, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 78 | 2006 |
Early stages of growth of β-SiC on Si by MBE K Zekentes, V Papaioannou, B Pecz, J Stoemenos Journal of Crystal growth 157 (1-4), 392-399, 1995 | 78 | 1995 |
Diamond-graphene composite nanostructures P Németh, K McColl, RL Smith, M Murri, LAJ Garvie, M Alvaro, B Pécz, ... Nano Letters 20 (5), 3611-3619, 2020 | 74 | 2020 |
Characterization of ZnO: Al/Au/ZnO: Al trilayers for high performance transparent conducting electrodes T Dimopoulos, GZ Radnoczi, B Pécz, H Brückl Thin Solid Films 519 (4), 1470-1474, 2010 | 74 | 2010 |
Indium nitride at the 2D limit B Pécz, G Nicotra, F Giannazzo, R Yakimova, A Koos, ... Advanced Materials 33 (1), 2006660, 2021 | 72 | 2021 |
Epitaxial lateral overgrowth of GaN on Si (111) E Feltin, B Beaumont, P Vennéguès, M Vaille, P Gibart, T Riemann, ... Journal of Applied Physics 93 (1), 182-185, 2003 | 71 | 2003 |