Design issues and considerations for low-cost 3-D TSV IC technology G Van der Plas, P Limaye, I Loi, A Mercha, H Oprins, C Torregiani, S Thijs, ...
IEEE Journal of Solid-State Circuits 46 (1), 293-307, 2010
393 2010 Design methodology for MuGFET ESD protection devices S Thijs, D Linten, DE Trémouilles
US Patent 7,923,266, 2011
196 2011 Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective V Subramanian, B Parvais, J Borremans, A Mercha, D Linten, P Wambacq, ...
IEEE Transactions on Electron Devices 53 (12), 3071-3079, 2006
192 2006 A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS D Linten, S Thijs, MI Natarajan, P Wambacq, W Jeamsaksiri, J Ramos, ...
IEEE Journal of Solid-State Circuits 40 (7), 1434-1442, 2005
189 2005 Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
181 2018 Causes and consequences of the stochastic aspect of filamentary RRAM R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ...
Microelectronic Engineering 147, 171-175, 2015
128 2015 Low-power 5 GHz LNA and VCO in 90 nm RF CMOS D Linten, L Aspemyr, W Jeamsaksiri, J Ramos, A Mercha, S Jenei, S Thijs, ...
2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No …, 2004
123 2004 An ESD-protected DC-to-6GHz 9.7 mW LNA in 90nm digital CMOS J Borremans, P Wambacq, D Linten
2007 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2007
102 2007 Laser-and heavy ion-induced charge collection in bulk FinFETs F El-Mamouni, EX Zhang, ND Pate, N Hooten, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 58 (6), 2563-2569, 2011
90 2011 Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs V Subramaniana, B Parvais, J Borremans, A Mercha, D Linten, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
80 2005 Geometry dependence of total-dose effects in bulk FinFETs I Chatterjee, EX Zhang, BL Bhuva, RA Reed, ML Alles, NN Mahatme, ...
IEEE Transactions on Nuclear Science 61 (6), 2951-2958, 2014
75 2014 The Impact of X-Ray and Proton Irradiation on JS Bi, ZS Han, EX Zhang, MW McCurdy, RA Reed, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 60 (6), 4540-4546, 2013
67 2013 A physically unclonable function using soft oxide breakdown featuring 0% native BER and 51.8 fJ/bit in 40-nm CMOS KH Chuang, E Bury, R Degraeve, B Kaczer, D Linten, I Verbauwhede
IEEE Journal of Solid-State Circuits 54 (10), 2765-2776, 2019
66 2019 A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability B Kaczer, J Franco, P Weckx, PJ Roussel, V Putcha, E Bury, M Simicic, ...
Microelectronics Reliability 81, 186-194, 2018
66 2018 The potential of FinFETs for analog and RF circuit applications P Wambacq, B Verbruggen, K Scheir, J Borremans, M Dehan, D Linten, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 54 (11), 2541-2551, 2007
64 2007 Heavy-ion-induced current transients in bulk and SOI FinFETs F El-Mamouni, EX Zhang, DR Ball, B Sierawski, MP King, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 59 (6), 2674-2681, 2012
59 2012 Single- and Multiple-Event Induced Upsets in WG Bennett, NC Hooten, RD Schrimpf, RA Reed, MH Mendenhall, ...
IEEE Transactions on Nuclear Science 61 (4), 1717-1725, 2014
54 2014 Neutron-induced failure in silicon IGBTs, silicon super-junction and SiC MOSFETs A Griffoni, J van Duivenbode, D Linten, E Simoen, P Rech, L Dilillo, ...
IEEE Transactions on Nuclear Science 59 (4), 866-871, 2012
54 2012 T-diodes-a novel plug-and-play wideband RF circuit ESD protection methodology D Linten, S Thijs, J Borremans, M Dehan, D Tremouilles, M Scholz, ...
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007
52 2007 Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels E Bury, B Kaczer, D Linten, L Witters, H Mertens, N Waldron, X Zhou, ...
2016 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2016
50 2016 
Steven ThijsimecПодтвержден адрес электронной почты в домене imec.be
