| The emergence and prospects of deep-ultraviolet light-emitting diode technologies M Kneissl, TY Seong, J Han, H Amano nature photonics 13 (4), 233-244, 2019 | 1047 | 2019 |
| Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ... Nature materials 5 (10), 810-816, 2006 | 844 | 2006 |
| AlGaN/GaN quantum well ultraviolet light emitting diodes J Han, MH Crawford, RJ Shul, JJ Figiel, M Banas, L Zhang, YK Song, ... Applied physics letters 73 (12), 1688-1690, 1998 | 348 | 1998 |
| Graded band gap ohmic contact to p‐ZnSe Y Fan, J Han, L He, J Saraie, RL Gunshor, M Hagerott, H Jeon, ... Applied physics letters 61 (26), 3160-3162, 1992 | 310 | 1992 |
| Stress evolution during metalorganic chemical vapor deposition of GaN S Hearne, E Chason, J Han, JA Floro, J Figiel, J Hunter, H Amano, ... Applied Physics Letters 74 (3), 356-358, 1999 | 307 | 1999 |
| The band-gap bowing of alloys SR Lee, AF Wright, MH Crawford, GA Petersen, J Han, RM Biefeld Applied physics letters 74 (22), 3344-3346, 1999 | 277 | 1999 |
| Low-dislocation-density GaN from a single growth on a textured substrate CIH Ashby, CC Mitchell, J Han, NA Missert, PP Provencio, DM Follstaedt, ... Applied Physics Letters 77 (20), 3233-3235, 2000 | 238 | 2000 |
| Stress and defect control in GaN using low temperature interlayers H Amano, M Iwaya, T Kashima, M Katsuragawa, I Akasaki, J Han, ... Japanese journal of applied physics 37 (12B), L1540, 1998 | 231 | 1998 |
| Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors KE Waldrip, J Han, JJ Figiel, H Zhou, E Makarona, AV Nurmikko Applied Physics Letters 78 (21), 3205-3207, 2001 | 223 | 2001 |
| Influence of MgO and passivation on AlGaN/GaN high-electron-mobility transistors B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ... Applied Physics Letters 80 (9), 1661-1663, 2002 | 222 | 2002 |
| The effect of on morphology evolution during GaN metalorganic chemical vapor deposition J Han, TB Ng, RM Biefeld, MH Crawford, DM Follstaedt Applied physics letters 71 (21), 3114-3116, 1997 | 204 | 1997 |
| III-Nitride based light emitting diodes and applications TY Seong, J Han, H Amano, H Morkoç Springer, 2017 | 198 | 2017 |
| Continuous-wave, room temperature, ridge waveguide green-blue diode laser A Salokatve, H Jeon, J Ding, M Hovinen, AV Nurmikko, DC Grillo, L He, ... Electronics Letters 25 (29), 2192-2194, 1993 | 192 | 1993 |
| Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy C Theodoropoulos, TJ Mountziaris, HK Moffat, J Han Journal of crystal growth 217 (1-2), 65-81, 2000 | 176 | 2000 |
| Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue‐green laser diode GC Hua, N Otsuka, DC Grillo, Y Fan, J Han, MD Ringle, RL Gunshor, ... Applied physics letters 65 (11), 1331-1333, 1994 | 176 | 1994 |
| Mesoporous GaN for Photonic Engineering Highly Reflective GaN Mirrors as an Example C Zhang, SH Park, D Chen, DW Lin, W Xiong, HC Kuo, CF Lin, H Cao, ... ACS photonics 2 (7), 980-986, 2015 | 173 | 2015 |
| Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism D Chen, H Xiao, J Han Journal of Applied Physics 112 (6), 2012 | 160 | 2012 |
| Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers J Han, KE Waldrip, SR Lee, JJ Figiel, SJ Hearne, GA Petersen, SM Myers Applied Physics Letters 78 (1), 67-69, 2001 | 159 | 2001 |
| Micro‐light emitting diode: from chips to applications PJ Parbrook, B Corbett, J Han, TY Seong, H Amano Laser & Photonics Reviews 15 (5), 2000133, 2021 | 155 | 2021 |
| Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures SJ Hearne, J Han, SR Lee, JA Floro, DM Follstaedt, E Chason, IST Tsong Applied Physics Letters 76 (12), 1534-1536, 2000 | 152 | 2000 |
Arto NurmikkoProfessor of Engineering and Physics, Brown UniversityVerified email at brown.edu
