| Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials D Donetsky, G Belenky, S Svensson, S Suchalkin Applied Physics Letters 97 (5), 2010 | 179 | 2010 |
| Continuous wave operation of diode lasers at 3.36 μm at 12 C L Shterengas, G Belenky, T Hosoda, G Kipshidze, S Suchalkin Applied Physics Letters 93 (1), 2008 | 142 | 2008 |
| Type-I quantum well cascade diode lasers emitting near 3 μm L Shterengas, R Liang, G Kipshidze, T Hosoda, S Suchalkin, G Belenky Applied Physics Letters 103 (12), 2013 | 57 | 2013 |
| GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions S Suchalkin, S Jung, G Kipshidze, L Shterengas, T Hosoda, D Westerfeld, ... Applied Physics Letters 93 (8), 2008 | 43 | 2008 |
| Semiconductor light source with electrically tunable emission wavelength G Belenky, JD Bruno, MV Kisin, S Luryi, L Shterengas, S Suchalkin, ... US Patent 7,876,795, 2011 | 39 | 2011 |
| Evidence for electron-hole hybridization in cyclotron-resonance spectra of InAs/GaSb heterostructures Y Vasilyev, S Suchalkin, K Von Klitzing, B Meltser, S Ivanov, P Kop’ev Physical Review B 60 (15), 10636, 1999 | 36 | 1999 |
| Electronic properties of unstrained unrelaxed narrow gap InAsxSb1− x alloys S Suchalkin, J Ludwig, G Belenky, B Laikhtman, G Kipshidze, Y Lin, ... Journal of Physics D: Applied Physics 49 (10), 105101, 2016 | 35 | 2016 |
| 200 mW type I GaSb-based laser diodes operating at 3 μm: Role of waveguide width T Hosoda, G Kipshidze, L Shterengas, S Suchalkin, G Belenky Applied Physics Letters 94 (26), 2009 | 33 | 2009 |
| Optical gain and loss in 3 μm diode “W” quantum-well lasers S Suchalkin, D Westerfeld, D Donetski, S Luryi, G Belenky, R Martinelli, ... Applied physics letters 80 (16), 2833-2835, 2002 | 33 | 2002 |
| Widely tunable type-II interband cascade laser S Suchalkin, MV Kisin, S Luryi, G Belenky, FJ Towner, JD Bruno, ... Applied physics letters 88 (3), 031103, 2006 | 30 | 2006 |
| Dynamics of the far-infrared photoresponse in quantum Hall systems NG Kalugin, YB Vasilyev, SD Suchalkin, G Nachtwei, BE Sagol, K Eberl Physical Review B 66 (8), 085308, 2002 | 30 | 2002 |
| High dimensional addressable LED arrays based on type I GaInAsSb quantum wells with quinternary AlGaInAsSb barriers S Jung, S Suchalkin, D Westerfeld, G Kipshidze, E Golden, D Snyder, ... Semiconductor science and technology 26 (8), 085022, 2011 | 29 | 2011 |
| Dual wavelength GaSb based type I quantum well mid-infrared light emitting diodes S Jung, S Suchalkin, G Kipshidze, D Westerfeld, E Golden, D Snyder, ... Applied Physics Letters 96 (19), 2010 | 27 | 2010 |
| Experimental study of the optical gain and loss in InAs/GaInSb interband cascade lasers S Suchalkin, J Bruno, R Tober, D Westerfeld, M Kisin, G Belenky Applied physics letters 83 (8), 1500-1502, 2003 | 26 | 2003 |
| Engineering Dirac Materials: Metamorphic InAs1–xSbx/InAs1–ySby Superlattices with Ultralow Bandgap S Suchalkin, G Belenky, M Ermolaev, S Moon, Y Jiang, D Graf, D Smirnov, ... Nano Letters 18 (1), 412-417, 2018 | 25 | 2018 |
| Background and interface electron populations in InAs0. 58Sb0. 42 SP Svensson, FJ Crowne, HS Hier, WL Sarney, WA Beck, Y Lin, ... Semiconductor Science and Technology 30 (3), 035018, 2015 | 25 | 2015 |
| In-plane and growth direction electron cyclotron effective mass in short period InAs/GaSb semiconductor superlattices S Suchalkin, G Belenky, SP Svensson, B Laikhtman, D Smirnov, LC Tung, ... Journal of Applied Physics 110 (4), 2011 | 24 | 2011 |
| Cascade pumping of GaSb-based type-I quantum well diode lasers L Shterengas, R Liang, G Kipshidze, T Hosoda, S Suchalkin, G Belenky Novel In-Plane Semiconductor Lasers XIII 9002, 92-101, 2014 | 23 | 2014 |
| Different components of far-infrared photoresponse of quantum Hall detectors NG Kalugin, G Nachtwei, YB Vasilyev, SD Suchalkin, K Eberl Applied physics letters 81 (2), 382-384, 2002 | 23 | 2002 |
| High performance interband cascade lasers at 3.8 microns RP Leavitt, JD Bruno, JL Bradshaw, KM Lascola, JT Pham, FJ Towner, ... Novel In-Plane Semiconductor Lasers XI 8277, 206-217, 2012 | 22 | 2012 |
