| Metastable nature of InN and In-rich InGaN alloys SV Ivanov, TV Shubina, TA Komissarova, VN Jmerik Journal of crystal growth 403, 83-89, 2014 | 73 | 2014 |
| Impedance of photosensitive nanocrystalline PbTe (In) films T Komissarova, D Khokhlov, L Ryabova, Z Dashevsky, V Kasiyan Physical Review B 75 (19), 195326, 2007 | 31 | 2007 |
| Inconsistency of basic optical processes in plasmonic nanocomposites TV Shubina, VA Kosobukin, TA Komissarova, VN Jmerik, AN Semenov, ... Physical Review B 79 (15), 153105, 2009 | 21 | 2009 |
| Low voltage control of exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure VL Korenev, IV Kalitukha, IA Akimov, VF Sapega, EA Zhukov, E Kirstein, ... Nature communications 10 (1), 2899, 2019 | 17 | 2019 |
| Terahertz electroluminescence of surface plasmons from nanostructured InN layers TV Shubina, AV Andrianov, AO Zakhar’in, VN Jmerik, IP Soshnikov, ... Applied Physics Letters 96 (18), 2010 | 17 | 2010 |
| Abnormal magnetic-field dependence of Hall coefficient in InN epilayers TA Komissarova, MA Shakhov, VN Jmerik, TV Shubina, RV Parfeniev, ... Applied Physics Letters 95 (1), 2009 | 16 | 2009 |
| Peculiarities of strain relaxation in linearly graded InxGa1− xAs/GaAs (001) metamorphic buffer layers grown by molecular beam epitaxy SV Sorokin, GV Klimko, IV Sedova, AA Sitnikova, DA Kirilenko, ... Journal of Crystal Growth 455, 83-89, 2016 | 15 | 2016 |
| Features of molecular beam epitaxy of the GaN (0001) and GaN (000) layers with the use of different methods of activation of nitrogen AM Mizerov, VN Jmerik, VK Kaibyshev, TA Komissarova, SA Masalov, ... Semiconductors 43 (8), 1058-1063, 2009 | 14 | 2009 |
| Interaction of surface plasmon–phonon polaritons with terahertz radiation in heavily doped GaAs epilayers VA Shalygin, MD Moldavskaya, VY Panevin, AI Galimov, GA Melentev, ... Journal of Physics: Condensed Matter 31 (10), 105002, 2019 | 13 | 2019 |
| Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures AN Semenov, BY Meltser, VA Solov’Ev, TA Komissarova, AA Sitnikova, ... Semiconductors 45, 1327-1333, 2011 | 13 | 2011 |
| Identification of the main contributions to the conductivity of epitaxial InN TA Komissarova, VN Jmerik, SV Ivanov, O Drachenko, X Wang, ... Physical Review B 84 (3), 035205, 2011 | 12 | 2011 |
| Electrical properties of Mg‐doped GaN and AlxGa1–xN TA Komissarova, VN Jmerik, AM Mizerov, NM Shmidt, BY Ber, ... physica status solidi c 6 (S2 2), S466-S469, 2009 | 11 | 2009 |
| Investigation of InSb structures grown by molecular beam epitaxy ID Burlakov, KO Boltar, AE Mirofyanchenko, PV Vlasov, AA Lopukhin, ... Uspekhi prikladnoi fiziki 3 (6), 559-565, 2015 | 10 | 2015 |
| Strain relaxation in convex-graded InxAl1-xAs (x= 0.05–0.79) metamorphic buffer layers grown by molecular beam epitaxy on GaAs (001) VA Solov’ev, MY Chernov, MV Baidakova, DA Kirilenko, MA Yagovkina, ... Superlattices and Microstructures 113, 777-784, 2018 | 9 | 2018 |
| Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions and ex situ annealing TA Komissarova, MV Lebedev, SV Sorokin, GV Klimko, IV Sedova, ... Semiconductor Science and Technology 32 (4), 045012, 2017 | 9 | 2017 |
| Electrical properties of surface and interface layers of the N-and In-polar undoped and Mg-doped InN layers grown by PA MBE TA Komissarova, E Kampert, J Law, VN Jmerik, P Paturi, X Wang, ... Applied Physics Letters 112 (2), 2018 | 8 | 2018 |
| Large magnetoresistance effect in InN epilayers TA Komissarova, MA Shakhov, VN Jmerik, RV Parfeniev, P Paturi, ... Physical Review B 82 (24), 245204, 2010 | 8 | 2010 |
| Detection of metallic In nanoparticles in InGaN alloys TA Komissarova, VN Jmerik, SV Ivanov, P Paturi Applied Physics Letters 99 (7), 2011 | 7 | 2011 |
| Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures YV Terent’ev, C Zoth, VV Bel’kov, P Olbrich, C Drexler, V Lechner, P Lutz, ... Applied Physics Letters 99 (7), 2011 | 7 | 2011 |
| Studies of N-Doped p-ZnO layers grown on c-Sapphire by radical source molecular beam epitaxy SV Ivanov, A El-Shaer, M Al-Suleiman, A Bakin, A Waag, ... Journal of the Korean Physical Society 53 (9), 3016-3020, 2008 | 7 | 2008 |
