A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to G Brammertz, A Alian, DHC Lin, M Meuris, M Caymax, WE Wang
IEEE Transactions on Electron Devices 58 (11), 3890-3897, 2011
121 2011 Border traps in Ge/III–V channel devices: Analysis and reliability aspects E Simoen, DHC Lin, A Alian, G Brammertz, C Merckling, J Mitard, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 444-455, 2013
88 2013 Electrical properties of III-V/oxide interfaces G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ...
ECS transactions 19 (5), 375, 2009
83 2009 Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
82 2011 Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53 Ga0.47 As devices with Al2 O3 J Franco, A Alian, B Kaczer, D Lin, T Ivanov, A Pourghaderi, K Martens, ...
2014 IEEE International Reliability Physics Symposium, 6A. 2.1-6A. 2.6, 2014
72 2014 Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate … LK Chu, C Merckling, A Alian, J Dekoster, J Kwo, M Hong, M Caymax, ...
Applied Physics Letters 99 (4), 2011
71 2011 IEEE International Electron Devices Meeting HY Lee, KI Choi, MK Cho, YH Song, KC Park, K Kim
IEDM Technical Digest (Washington, DC 2003 Dec. 8-10) p 22 (1), 2008
69 2008 CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance U Peralagu, A Alian, V Putcha, A Khaled, R Rodriguez, ...
2019 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2019
68 2019 InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature A Alian, Y Mols, CCM Bordallo, D Verreck, A Verhulst, A Vandooren, ...
Applied Physics Letters 109 (24), 2016
66 2016 Review of electrical characterization of ultra-shallow junctions with micro four-point probes DH Petersen, O Hansen, TM Hansen, P Bøggild, R Lin, D Kjær, ...
Journal of Vacuum Science & Technology B 28 (1), C1C27-C1C33, 2010
66 2010 GaSb molecular beam epitaxial growth on p-InP (001) and passivation with in situ deposited Al2O3 gate oxide C Merckling, X Sun, A Alian, G Brammertz, VV Afanas’ev, TY Hoffmann, ...
Journal of Applied Physics 109 (7), 2011
56 2011 Impact of the channel thickness on the performance of ultrathin InGaAs channel MOSFET devices A Alian, MA Pourghaderi, Y Mols, M Cantoro, T Ivanov, N Collaert, ...
2013 IEEE International Electron Devices Meeting, 16.6. 1-16.6. 4, 2013
55 2013 Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap N Collaert, A Alian, H Arimura, G Boccardi, G Eneman, J Franco, T Ivanov, ...
Microelectronic Engineering 132, 218-225, 2015
50 2015 RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs J Franco, B Kaczer, N Waldron, PJ Roussel, A Alian, MA Pourghaderi, Z Ji, ...
2014 IEEE International Electron Devices Meeting, 20.2. 1-20.2. 4, 2014
48 2014 Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET A Alian, J Franco, A Vandooren, Y Mols, A Verhulst, S El Kazzi, ...
2015 IEEE International Electron Devices Meeting (IEDM), 31.7. 1-31.7. 4, 2015
43 2015 BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities G Groeseneken, J Franco, M Cho, B Kaczer, M Toledano-Luque, ...
2014 IEEE International Electron Devices Meeting, 34.4. 1-34.4. 4, 2014
42 2014 Ammonium sulfide vapor passivation of In0. 53Ga0. 47As and InP surfaces A Alian, G Brammertz, C Merckling, A Firrincieli, WE Wang, HC Lin, ...
Applied Physics Letters 99 (11), 2011
41 2011 H2O-and O3-based atomic layer deposition of high-κ dielectric films on GeO2 passivation layers A Delabie, A Alian, F Bellenger, M Caymax, T Conard, A Franquet, ...
Journal of the Electrochemical Society 156 (10), G163, 2009
41 2009 Intrinsic robustness of TFET subthreshold swing to interface and oxide traps: A comparative PBTI study of InGaAs TFETs and MOSFETs J Franco, AR Alian, A Vandooren, AS Verhulst, D Linten, N Collaert, ...
IEEE Electron Device Letters 37 (8), 1055-1058, 2016
34 2016 Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs D Lin, A Alian, S Gupta, B Yang, E Bury, S Sioncke, R Degraeve, ...
2012 International Electron Devices Meeting, 28.3. 1-28.3. 4, 2012
34 2012 