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Wanghua CHEN
Wanghua CHEN
Ecole Polytechnique
Подтвержден адрес электронной почты в домене polytechnique.edu
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Процитировано
Год
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
VG Dubrovskii, NV Sibirev, GE Cirlin, IP Soshnikov, WH Chen, R Larde, ...
Physical Review B 79 (20), 205316, 2009
2452009
Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth
W Chen, L Yu, S Misra, Z Fan, P Pareige, G Patriarche, S Bouchoule, ...
Nature communications 5, 4134, 2014
1192014
A review on plasma-assisted VLS synthesis of silicon nanowires and radial junction solar cells
S Misra, L Yu, W Chen, M Foldyna, PR i Cabarrocas
Journal of physics D: Applied physics 47 (39), 393001, 2014
1012014
Ultrathin epitaxial silicon solar cells with inverted nanopyramid arrays for efficient light trapping
A Gaucher, A Cattoni, C Dupuis, W Chen, R Cariou, M Foldyna, L Lalouat, ...
Nano Letters 9 (16), 5358-5364, 2016
962016
Photonic nanostructures for advanced light trapping in thin crystalline silicon solar cells
C Trompoukis, I Abdo, R Cariou, I Cosme, W Chen, O Deparis, A Dmitriev, ...
physica status solidi (a) 212 (1), 140-155, 2015
782015
Boron distribution in the core of Si nanowire grown by chemical vapor deposition
W Chen, VG Dubrovskii, X Liu, T Xu, R Lardé, J Philippe Nys, ...
Journal of Applied Physics 111 (9), 2012
652012
Wetting layer: the key player in plasma-assisted silicon nanowire growth mediated by tin
S Misra, L Yu, W Chen, P Roca i Cabarrocas
The Journal of Physical Chemistry C 117 (34), 17786-17790, 2013
612013
Narrowing the length distribution of Ge nanowires
VG Dubrovskii, T Xu, Y Lambert, JP Nys, B Grandidier, D Stievenard, ...
Physical review letters 108 (10), 105501, 2012
602012
Growth-in-place deployment of in-plane silicon nanowires
L Yu, W Chen, B O’Donnell, G Patriarche, S Bouchoule, P Pareige, ...
Applied Physics Letters 99 (20), 2011
432011
Natural occurrence of the diamond hexagonal structure in silicon nanowires grown by a plasma assisted vapour-liquid-solid method
J Tang, JL Maurice, F Fossard, I Florea, W Chen, EV Johnson, M Foldyna, ...
Nanoscale 9 (24), 8113-8118, 2017
412017
Ultrathin PECVD epitaxial Si solar cells on glass via low‐temperature transfer process
R Cariou, W Chen, I Cosme‐Bolanos, JL Maurice, M Foldyna, V Depauw, ...
Progress in Photovoltaics: Research and Applications 24 (8), 1075, 2016
402016
Core-Shell Heterojunction Solar Cells Based on Disordered Silicon Nanowire Arrays
AS Togonal, M Foldyna, W Chen, JX Wang, V Neplokh, M Tchernycheva, ...
The Journal of Physical Chemistry C 120 (5), 2962, 2016
402016
Rational design of nanowire solar cells: from single nanowire to nanowire arrays
W Chen, PR i Cabarrocas
Nanotechnology 30, 194002, 2019
382019
Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration
R Cariou, W Chen, JL Maurice, J Yu, G Patriarche, O Mauguin, L Largeau, ...
Scientific reports 6, 25674, 2016
362016
Plasma-assisted growth of silicon nanowires by Sn catalyst: step-by-step observation
J Tang, JL Maurice, W Chen, S Misra, M Foldyna, EV Johnson, ...
Nanoscale Research Letters 11, 1-10, 2016
352016
Sunlight-thin nanophotonic monocrystalline silicon solar cells
V Depauw, C Trompoukis, I Massiot, W Chen, A Dmitriev, ...
Nano Futures 1, 021001, 2017
272017
Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon
W Chen, R Cariou, G Hamon, R Léal, JL Maurice, P Roca i Cabarrocas
Scientific Reports 7, 43968, 2017
212017
Growth of In-Plane Ge 1-x Sn x Nanowires with 22 at.% Sn Using Solid-Liquid-Solid Mechanism
E Azrak, W Chen, S Moldovan, S Gao, S Duguay, P Pareige, ...
The Journal of Physical Chemistry C 122 (45), 26236, 2018
202018
Lifetime assessment in crystalline silicon: From nanopatterned wafer to ultra-thin crystalline films for solar cells
I Cosme, R Cariou, W Chen, M Foldyna, R Boukhicha, PR i Cabarrocas, ...
Solar Energy Materials and Solar Cells 135, 93-98, 2015
202015
Study of the effect of gas pressure and catalyst droplets number density on silicon nanowires growth, tapering, and gold coverage
W Chen, R Larde, E Cadel, T Xu, B Grandidier, JP Nys, D Stiévenard, ...
Journal of Applied Physics 107 (8), 084902, 2010
202010
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Статьи 1–20