Observation of two-dimensional electron gas in a Si quantum well with mobility of TM Lu, DC Tsui, CH Lee, CW Liu
Applied Physics Letters 94 (18), 182102, 2009
75 2009 Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry TM Lu, NC Bishop, T Pluym, J Means, PG Kotula, J Cederberg, LA Tracy, ...
Applied Physics Letters 99 (4), 043101, 2011
39 2011 Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures SH Huang, TM Lu, SC Lu, CH Lee, CW Liu, DC Tsui
Applied Physics Letters 101, 042111, 2012
36 2012 Valley splitting of Si∕ Si_ {1− x} Ge_ {x} heterostructures in tilted magnetic fields K Lai, TM Lu, W Pan, DC Tsui, S Lyon, J Liu, YH Xie, M Mühlberger, ...
Physical Review B 73 (16), 161301, 2006
34 2006 Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors TM Lu, CH Lee, SH Huang, DC Tsui, CW Liu
Applied Physics Letters 99 (15), 153510, 2011
33 2011 Cyclotron mass of two-dimensional holes in (100) oriented TM Lu, ZF Li, DC Tsui, MJ Manfra, LN Pfeiffer, KW West
Applied Physics Letters 92 (1), 012109, 2008
31 2008 Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors TM Lu, W Pan, DC Tsui, CH Lee, CW Liu
Physical Review B 85 (12), 121307, 2012
30 2012 Atomic precision advanced manufacturing for digital electronics DR Ward, SW Schmucker, EM Anderson, E Bussmann, L Tracy, TM Lu, ...
arXiv preprint arXiv:2002.11003, 2020
29 2020 Single and double hole quantum dots in strained Ge/SiGe quantum wells WJ Hardy, CT Harris, YH Su, Y Chuang, J Moussa, LN Maurer, JY Li, ...
Nanotechnology 30 (21), 215202, 2019
28 2019 Capacitively induced high mobility two-dimensional electron gas in undoped TM Lu, J Liu, J Kim, K Lai, DC Tsui, YH Xie
Applied physics letters 90 (18), 182114, 2007
27 2007 Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure D Laroche, SH Huang, Y Chuang, JY Li, CW Liu, TM Lu
Applied Physics Letters 108 (23), 233504, 2016
26 2016 Electron spin lifetime of a single antimony donor in silicon LA Tracy, TM Lu, NC Bishop, GA Ten Eyck, T Pluym, JR Wendt, MP Lilly, ...
Applied Physics Letters 103 (14), 143115, 2013
26 2013 All-optical lithography process for contacting nanometer precision donor devices DR Ward, MT Marshall, DM Campbell, TM Lu, JC Koepke, ...
Applied Physics Letters 111 (19), 193101, 2017
25 2017 Designing nanomagnet arrays for topological nanowires in silicon LN Maurer, JK Gamble, L Tracy, S Eley, TM Lu
Physical Review Applied 10 (5), 054071, 2018
24 2018 Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures YH Su, Y Chuang, CY Liu, JY Li, TM Lu
Physical Review Materials 1 (4), 044601, 2017
24 2017 Scattering mechanisms in shallow undoped Si/SiGe quantum wells D Laroche, SH Huang, E Nielsen, Y Chuang, JY Li, CW Liu, TM Lu
AIP Advances 5 (10), 107106, 2015
22 2015 In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK TM Lu, L Sun, DC Tsui, S Lyon, W Pan, M Mühlberger, F Schäffler, J Liu, ...
Physical Review B 78 (23), 233309, 2008
21 2008 Undoped high mobility two-dimensional hole-channel TM Lu, DR Luhman, K Lai, DC Tsui, LN Pfeiffer, KW West
Applied Physics Letters 90 (11), 112113, 2007
17 2007 Effective g factor of low-density two-dimensional holes in a Ge quantum well TM Lu, CT Harris, SH Huang, Y Chuang, JY Li, CW Liu
Applied Physics Letters 111 (10), 102108, 2017
15 2017 Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime CT Chou, NT Jacobson, JE Moussa, AD Baczewski, Y Chuang, CY Liu, ...
Nanoscale 10 (44), 20559-20564, 2018
11 2018 
Prof. Jeehwan KimMITПодтвержден адрес электронной почты в домене mit.edu
