Подписаться
Dominique Drouin
Dominique Drouin
Professeur Universite de Sherbrooke
Подтвержден адрес электронной почты в домене usherbrooke.ca
Название
Процитировано
Процитировано
Год
CASINO V2. 42—a fast and easy‐to‐use modeling tool for scanning electron microscopy and microanalysis users
D Drouin, AR Couture, D Joly, X Tastet, V Aimez, R Gauvin
Scanning: The Journal of Scanning Microscopies 29 (3), 92-101, 2007
17202007
CASINO: A new Monte Carlo code in C language for electron beam interaction—Part I: Description of the program
P Hovington, D Drouin, R Gauvin
Scanning 19 (1), 1-14, 1997
8491997
Three‐dimensional electron microscopy simulation with the CASINO Monte Carlo software
H Demers, N Poirier‐Demers, AR Couture, D Joly, M Guilmain, ...
Scanning 33 (3), 135-146, 2011
3872011
CASINO: A new monte carlo code in C language for electron beam interactions—part II: Tabulated values of the mott cross section
D Drouin, P Hovington, R Gauvin
Scanning 19 (1), 20-28, 1997
2601997
CASINO: a new Monte Carlo code in C language for electron beam interactions—part III: stopping power at low energies
P Hovington, D Drouin, R Gauvin, DC Joy, N Evans
Scanning 19 (1), 29-35, 1997
1961997
Nanometer-resolution electron microscopy through micrometers-thick water layers
N de Jonge, N Poirier-Demers, H Demers, DB Peckys, D Drouin
Ultramicroscopy 110 (9), 1114-1119, 2010
1712010
In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives
A Amirsoleimani, F Alibart, V Yon, J Xu, MR Pazhouhandeh, S Ecoffey, ...
Advanced Intelligent Systems 2 (11), 2000115, 2020
1172020
Cryogenic temperature characterization of a 28-nm FD-SOI dedicated structure for advanced CMOS and quantum technologies co-integration
P Galy, JC Lemyre, P Lemieux, F Arnaud, D Drouin, M Pioro-Ladriere
IEEE Journal of the Electron Devices Society 6, 594-600, 2018
812018
A nanodamascene process for advanced single-electron transistor fabrication
C Dubuc, J Beauvais, D Drouin
IEEE transactions on nanotechnology 7 (1), 68-73, 2008
812008
Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence
N Pauc, MR Phillips, V Aimez, D Drouin
Applied physics letters 89 (16), 2006
812006
Quantification of spherical inclusions in the scanning electron microscope using Monte Carlo simulations
R Gauvin, P Hovington, D Drouin
Scanning 17 (4), 202-219, 1995
771995
Space-charge limited transport in large-area monolayer hexagonal boron nitride
F Mahvash, E Paradis, D Drouin, T Szkopek, M Siaj
Nano letters 15 (4), 2263-2268, 2015
582015
Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
YA Bioud, A Boucherif, M Myronov, A Soltani, G Patriarche, N Braidy, ...
Nature communications 10 (1), 4322, 2019
502019
A formula to compute total elastic Mott cross‐sections
R Gauvin, D Drouin
Scanning 15 (3), 140-150, 1993
491993
Chemical composition of nanoporous layer formed by electrochemical etching of p-Type GaAs
YA Bioud, A Boucherif, A Belarouci, E Paradis, D Drouin, R Arès
Nanoscale research letters 11, 1-8, 2016
482016
Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching
YA Bioud, A Boucherif, A Belarouci, E Paradis, S Fafard, V Aimez, ...
Electrochimica Acta 232, 422-430, 2017
472017
Sol–gel Pechini synthesis and optical spectroscopy of nanocrystalline La2O3 doped with Eu3+
M Méndez, JJ Carvajal, Y Cesteros, M Aguiló, F Díaz, A Giguère, ...
Optical Materials 32 (12), 1686-1692, 2010
472010
Room Temperature Single-Electron Transistor Featuring Gate-Enhanced on -State Current
A Beaumont, C Dubuc, J Beauvais, D Drouin
IEEE electron device letters 30 (7), 766-768, 2009
462009
Simulating STEM imaging of nanoparticles in micrometers-thick substrates
H Demers, N Poirier-Demers, D Drouin, N De Jonge
Microscopy and microanalysis 16 (6), 795-804, 2010
422010
Simulation and design methodology for hybrid SET-CMOS integrated logic at 22-nm room-temperature operation
R Parekh, A Beaumont, J Beauvais, D Drouin
IEEE transactions on electron devices 59 (4), 918-923, 2012
352012
В данный момент система не может выполнить эту операцию. Повторите попытку позднее.
Статьи 1–20