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Gu, Man "Mandy"
Gu, Man "Mandy"
Verified email at virginia.edu
Title
Cited by
Cited by
Year
Two‐Dimensional Mott Insulators in SrVO3 Ultrathin Films
M Gu, SA Wolf, J Lu
Advanced Materials Interfaces 1 (7), 1300126, 2014
762014
Li2CuTi3O8–Li4Ti5O12 double spinel anode material with improved rate performance for Li-ion batteries
D Wang, HY Xu, M Gu, CH Chen
Electrochemistry Communications 11 (1), 50-53, 2009
562009
Metal-insulator transition induced in CaVO3 thin films
M Gu, J Laverock, B Chen, KE Smith, SA Wolf, J Lu
Journal of Applied Physics 113 (13), 2013
412013
Resonant Soft-X-Ray Emission as a Bulk Probe of Correlated Electron Behavior in Metallic
J Laverock, B Chen, KE Smith, RP Singh, G Balakrishnan, M Gu, JW Lu, ...
Physical Review Letters 111 (4), 047402, 2013
252013
Metal-insulator transition in SrTi1−xVxO3 thin films
M Gu, SA Wolf, J Lu
Applied Physics Letters 103 (22), 223110, 2013
242013
Microstructural and domain effects in epitaxial CoFe2O4 films on MgO with perpendicular magnetic anisotropy
R Comes, M Gu, M Khokhlov, J Lu, SA Wolf
Journal of Magnetism and Magnetic Materials 324 (4), 524-527, 2012
242012
Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition
R Comes, M Gu, M Khokhlov, H Liu, J Lu, SA Wolf
Journal of Applied Physics 113 (2), 2013
222013
Hybrid low-k spacer scheme for advanced FinFET technology parasitic capacitance reduction
M Gu, X Wang, W Li, M Aquilino, J Peng, H Wang, D Jaeger, K Tabakman, ...
Electronics Letters 56 (10), 514-516, 2020
102020
FinFET with contact over active-gate for 5G ultra-wideband applications
A Razavieh, V Mahajan, WL Oo, S Cimino, SV Khokale, K Nagahiro, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
92020
Nano-engineering of electron correlation in oxide superlattices
J Laverock, M Gu, V Jovic, JW Lu, SA Wolf, RM Qiao, W Yang, KE Smith
Nano Futures 1 (3), 031001, 2017
82017
Transport phenomena in SrVO3/SrTiO3 superlattices
M Gu, SA Wolf, J Lu
Journal of Physics D: Applied Physics 51 (10), 10LT01, 2018
72018
Extremely-low threshold voltage FinFET for 5G mmWave applications
A Razavieh, Y Chen, T Ethirajan, M Gu, S Cimino, T Shimizu, MK Hassan, ...
IEEE Journal of the Electron Devices Society 9, 165-169, 2020
52020
Forming a more robust sidewall spacer with lower k (dielectric constant) value
T Han, M Gu, S Grunow, H Liu, S Sankaran, J Liu
2017 China Semiconductor Technology International Conference (CSTIC), 1-3, 2017
32017
Formation of epi source/drain material on transistor devices and the resulting structures
M Gu, T Han
US Patent 10,777,463, 2020
22020
Epitaxial structures of a semiconductor device having a wide gate pitch
MV Aquilino, D Jaeger, M Gu, B Morgenfeld, H Wang, KS Duggimpudi, ...
US Patent 10,971,625, 2021
12021
Lateral bipolar transistor
M Gu, H Wang, J Singh
US Patent 11,843,034, 2023
2023
Bipolar junction transistors including a stress liner
M Gu, J Singh, H Wang, J Johnson
US Patent 11,721,722, 2023
2023
Integrated circuit structure including asymmetric, recessed source and drain region and method for forming same
M Gu, W Li
US Patent 11,532,745, 2022
2022
LDMOS finFET structure with buried insulator layer and method for forming same
W Li, M Gu
US Patent 11,410,998, 2022
2022
Transistors with hybrid source/drain regions
W Li, M Gu
US Patent 11,374,002, 2022
2022
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