Roman M. Balagula (Балагула РМ)
Roman M. Balagula (Балагула РМ)
Center for Physical Sciences and Technology
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Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping
DA Firsov, LE Vorobjev, VY Panevin, AN Sofronov, RM Balagula, ...
Semiconductors 49 (1), 28-32, 2015
Photoinduced mid-infrared intraband light absorption and photoconductivity in Ge/Si quantum dots
AN Sofronov, LE Vorobjev, DA Firsov, VY Panevin, RM Balagula, ...
Superlattices and microstructures 87, 53-57, 2015
Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells
DA Firsov, LE Vorobjev, MY Vinnichenko, RM Balagula, MM Kulagina, ...
Semiconductors 49 (11), 1425-1429, 2015
Lateral photoconductivity in structures with Ge/Si quantum dots
VY Panevin, AN Sofronov, LE Vorobjev, DA Firsov, VA Shalygin, ...
Semiconductors 47 (12), 1574-1577, 2013
Realization of the Kohn’s theorem in Ge/Si quantum dots with hole gas: Theory and experiment
HA Sarkisyan, DB Hayrapetyan, LS Petrosyan, EM Kazaryan, ...
Nanomaterials 9 (1), 56, 2019
Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields
RM Balagula, MY Vinnichenko, IS Makhov, DA Firsov, LE Vorobjev
Semiconductors 50 (11), 1425-1430, 2016
Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots
AN Sofronov, RM Balagula, DA Firsov, LE Vorobjev, AA Tonkikh, ...
Semiconductors 52 (1), 59-63, 2018
Molecular beam epitaxial growth of dilute nitride GaNAs and GaInNAs nanowires
M Yukimune, R Fujiwara, T Mita, N Tsuda, J Natsui, Y Shimizu, M Jansson, ...
Nanotechnology 30 (24), 244002, 2019
Temperature evolution of the photoexcited charge carriers dynamics in Ge/Si quantum dots
RM Balagula, AN Sofronov, LE Vorobjev, DA Firsov, AA Tonkikh
Physica E: Low-dimensional Systems and Nanostructures 106, 85-89, 2019
Temperature shift of intraband absorption peak in tunnel-coupled QW structure
V Akimov, DA Firsov, CA Duque, V Tulupenko, RM Balagula, ...
Optical Materials 66, 160-165, 2017
Intersubband light absorption in tunnel-coupled GaAs/AlGaAs quantum wells for electrooptic studies
DA Rybalko, MY Vinnichenko, LE Vorobjev, DA Firsov, RM Balagula, ...
Journal of Physics: Conference Series 541 (1), 012081, 2014
Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range
JE Stehr, RM Balagula, M Jansson, M Yukimune, R Fujiwara, F Ishikawa, ...
Nanotechnology 31 (6), 065702, 2019
Temperature depopulation of the GeSi/Si quantum dots with non-equilibrium charge carriers
AN Sofronov, LE Vorobjev, DA Firsov, RM Balagula, AA Tonkikh
Superlattices and Microstructures 107, 228-233, 2017
Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field
RM Balagula, MY Vinnichenko, IS Makhov, AN Sofronov, DA Firsov, ...
Semiconductors 51 (3), 363-366, 2017
Терагерцовое излучение, связанное с примесными переходами электронов в квантовых ямах при оптической и электрической накачке
ДА Фирсов, ЛЕ Воробьев, ВЮ Паневин, АН Софронов, РМ Балагула, ...
Физика и техника полупроводников 49 (1), 30-34, 2015
Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
RM Balagula, M Jansson, M Yukimune, JE Stehr, F Ishikawa, WM Chen, ...
Scientific reports 10 (1), 1-9, 2020
Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence
M Jansson, L Francaviglia, R La, R Balagula, JE Stehr, CW Tu, AFI Morral, ...
Nanotechnology 30 (40), 405703, 2019
The effect of Auger recombination on the nonequilibrium carrier recombination rate in the InGaAsSb/AlGaAsSb quantum wells
M Vinnichenko, I Makhov, R Balagula, D Firsov, L Vorobjev, L Shterengas, ...
Superlattices and Microstructures 109, 743-749, 2017
Mid-infrared light absorption by photo-excited charge carriers in Ge/Si quantum dots
LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, RM Balagula, ...
Journal of Physics: Conference Series 586 (1), 012001, 2015
Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells
MY Vinnichenko, LE Vorobjev, DA Firsov, MO Mashko, RM Balagula, ...
Semiconductors 47 (11), 1513-1516, 2013
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