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seonyeong Kim
seonyeong Kim
Paul Scherrer Institute (PSI), IBM Zurich
Подтвержден адрес электронной почты в домене psi.ch
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Процитировано
Процитировано
Год
Robust graphene wet transfer process through low molecular weight polymethylmethacrylate
S Kim, S Shin, T Kim, H Du, M Song, CW Lee, K Kim, S Cho, DH Seo, ...
Carbon 98, 352-357, 2016
712016
The enhanced low resistance contacts and boosted mobility in two-dimensional p-type WSe2 transistors through Ar+ ion-beam generated surface defects
D Kim, H Du, T Kim, S Shin, S Kim, M Song, CW Lee, J Lee, H Cheong, ...
AIP Advances 6 (10), 2016
272016
Graphene transfer with self-doping by amorphous thermoplastic resins
S Shin, S Kim, T Kim, H Du, KS Kim, S Cho, S Seo
Carbon 111, 215-220, 2017
202017
A reliable and controllable graphene doping method compatible with current CMOS technology and the demonstration of its device applications
S Kim, S Shin, T Kim, H Du, M Song, KS Kim, S Cho, SW Lee, S Seo
Nanotechnology 28 (17), 175710, 2017
172017
Gate-switchable rectification in isotype van der Waals heterostructure of multilayer MoTe2/SnS2 with large band offsets
S Kim, H Du, T Kim, S Shin, H Song, H Kim, D Kang, CW Lee, S Seo
npj 2D Materials and Applications 4 (1), 15, 2020
142020
Flexible quantum dot light-emitting diodes without sacrificing optical and electrical performance
SH Yoon, S Kim, HJ Woo, J Kim, YW Kim, S Seo, E Yoo, J Cho, YJ Song, ...
Applied Surface Science 566, 150614, 2021
122021
Chemical vapor-deposited vanadium pentoxide nanosheets with highly stable and low switching voltages for effective selector devices
S Lee, J Kim, JH Jeon, M Song, S Kim, YG You, SH Jhang, S Seo, ...
ACS Applied Materials & Interfaces 10 (49), 42875-42881, 2018
92018
Highly efficient experimental approach to evaluate metal to 2D semiconductor interfaces in vertical diodes with asymmetric metal contacts
S Kim, DH Shin, YS Kim, IH Lee, CW Lee, S Seo, S Jung
ACS Applied Materials & Interfaces 13 (23), 27705-27712, 2021
72021
Method of preparing graphene-based thin-film laminate and graphene-based thin-film laminate prepared using the same
P Chonghan, CHO Seungmin, SEO Sunae, S SoMyeong, KIM TaeKwang, ...
US Patent 10,043,869, 2018
52018
Microscopic Quantum Transport Processes of Out‐of‐Plane Charge Flow in 2D Semiconductors Analyzed by a Fowler–Nordheim Tunneling Probe
DH Shin, DH Lee, SJ Choi, S Kim, H Kim, K Watanabe, T Taniguchi, ...
Advanced Electronic Materials 9 (6), 2300051, 2023
42023
Highly stable self-passivated MoO3-doped graphene film with nonvolatile MoOx layer
S Shin, S Kim, HK Song, H Kim, T Kim, H Du, D Kang, JY Hwang, YS Woo, ...
Materials Today Communications 33, 104432, 2022
32022
Topological lasing from embedded III-V 1D photonic crystal lattices in the telecom O-band
M Scherrer, S Kim, H Choi, CW Lee, K Moselund
Active Photonic Platforms XIII 11796, 9-13, 2021
22021
Electron doping and stability enhancement of doped graphene using a transparent polar dielectric film
S Shin, H Du, T Kim, S Kim, KS Kim, S Cho, CW Lee, S Seo
Journal of materials science 51, 748-755, 2016
22016
Facile fabrication for a stable interface in 2D materials/graphene van der Waals heterostructure
H Du, S Kim, T Kim, S Shin, H Song, H Kim, D Kang, YS Woo, S Seo
Applied Physics Express 14 (5), 055004, 2021
12021
Phase of Topological Lattice with Leaky Guided Mode Resonance
H Choi, S Kim, M Scherrer, K Moselund, CW Lee
Nanomaterials 13 (24), 3152, 2023
2023
Embedded InP-on-Si 1D photonic crystal emitting in the topological mode
M Scherrer, S Kim, H Choi, CW Lee, K Moselund
The European Conference on Lasers and Electro-Optics, ck_7_3, 2021
2021
Robustness of the topological interface state in a 1D photonic crystal resonator with an air-gap
S Kim, H Choi, M Scherrer, K Moselund, CW Lee
European Quantum Electronics Conference, ec_p_23, 2021
2021
Fabrication and characterization of nanoscale devices using Local anodic oxidation technique
H Du, T Kim, S Shin, S Kim, M Song, H Kim, D Kang, S Seo
APS March Meeting Abstracts 2019, E16. 012, 2019
2019
Understanding the electrical behaviors in van der Waals heterostructure field-effect transistor based on band alignment
S Kim, T Kim, S Shin, H Du, M Song, H Kim, D Kang, CW Lee, S Seo
APS March Meeting Abstracts 2019, C15. 013, 2019
2019
Hole carrier enhancement multi-layer MoSe₂ field-effect transistor using rapid-thermal annealing
KIM Seungjun, KIM Taekwang, DU Hyewon, S Somyeong, ...
한국진공학회 학술발표회초록집, 291-291, 2016
2016
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