Agnieszka Gocalińska
Agnieszka Gocalińska
Senior Staff Engineer, ams Osram
Verified email at - Homepage
Cited by
Cited by
Towards quantum-dot arrays of entangled photon emitters
G Juska, V Dimastrodonato, LO Mereni, A Gocalinska, E Pelucchi
Nature Photonics 7 (7), 527-531, 2013
Solution-processable near-IR photodetectors based on electron transfer from PbS nanocrystals to fullerene derivatives
K Szendrei, F Cordella, MV Kovalenko, M Böberl, G Hesser, M Yarema, ...
Advanced Materials 21 (6), 683-+, 2009
III-V-on-Si photonic integrated circuits realized using micro-transfer-printing
J Zhang, G Muliuk, J Juvert, S Kumari, J Goyvaerts, B Haq, C Op de Beeck, ...
APL photonics 4 (11), 2019
Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser
J Zhang, B Haq, J O’Callaghan, A Gocalinska, E Pelucchi, AJ Trindade, ...
Optics express 26 (7), 8821-8830, 2018
Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing
CO de Beeck, B Haq, L Elsinger, A Gocalinska, E Pelucchi, B Corbett, ...
Optica 7 (5), 386-393, 2020
Exciton–exciton interaction and optical gain in colloidal CdSe/CdS dot/rod nanocrystals
M Saba, S Minniberger, F Quochi, J Roither, M Marceddu, A Gocalinska, ...
Advanced Materials 21 (48), 4942-4946, 2009
Direct or indirect bandgap in hybrid lead halide perovskites?
V Sarritzu, N Sestu, D Marongiu, X Chang, Q Wang, S Masi, S Colella, ...
Advanced Optical Materials 6 (10), 1701254, 2018
Micro‐transfer‐printed III‐V‐on‐silicon C‐band semiconductor optical amplifiers
B Haq, S Kumari, K Van Gasse, J Zhang, A Gocalinska, E Pelucchi, ...
Laser & Photonics Reviews 14 (7), 1900364, 2020
Size-dependent electron transfer from colloidal PbS nanocrystals to fullerene
A Gocalinska, M Saba, F Quochi, M Marceddu, K Szendrei, J Gao, MA Loi, ...
The Journal of Physical Chemistry Letters 1 (7), 1149-1154, 2010
Selective carrier injection into patterned arrays of pyramidal quantum dots for entangled photon light-emitting diodes
TH Chung, G Juska, ST Moroni, A Pescaglini, A Gocalinska, E Pelucchi
Nature Photonics 10 (12), 782-787, 2016
Low Noise Heterogeneous III‐V‐on‐Silicon‐Nitride Mode‐Locked Comb Laser
S Cuyvers, B Haq, C Op de Beeck, S Poelman, A Hermans, Z Wang, ...
Laser & Photonics Reviews 15 (8), 2000485, 2021
InP-based active and passive components for communication systems at 2 μm
N Ye, MR Gleeson, MU Sadiq, B Roycroft, C Robert, H Yang, H Zhang, ...
Journal of Lightwave Technology 33 (5), 971-975, 2015
Dense WDM transmission at 2 μm enabled by an arrayed waveguide grating
H Zhang, M Gleeson, N Ye, N Pavarelli, X Ouyang, J Zhao, N Kavanagh, ...
Optics letters 40 (14), 3308-3311, 2015
Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates
R Loi, J O'Callaghan, B Roycroft, C Robert, A Fecioru, AJ Trindade, ...
IEEE Photonics Journal 8 (6), 1-10, 2016
Micro-transfer-printed III-V-on-silicon C-band distributed feedback lasers
B Haq, JR Vaskasi, J Zhang, A Gocalinska, E Pelucchi, B Corbett, ...
Optics Express 28 (22), 32793-32801, 2020
Conditions for entangled photon emission from (111) B site-controlled pyramidal quantum dots
G Juska, E Murray, V Dimastrodonato, TH Chung, ST Moroni, ...
Journal of Applied Physics 117 (13), 2015
40 Gb/s WDM transmission over 1.15-km HC-PBGF using an InP-based Mach-Zehnder modulator at 2 μm
MU Sadiq, H Zhang, J O'Callaghan, B Roycroft, N Kavanagh, K Thomas, ...
Journal of Lightwave Technology 34 (8), 1706-1711, 2016
Single pairs of time-bin-entangled photons
MAM Versteegh, ME Reimer, AA van den Berg, G Juska, ...
Physical Review A 92 (3), 033802, 2015
Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices
J O’Callaghan, R Loi, EE Mura, B Roycroft, AJ Trindade, K Thomas, ...
Optical Materials Express 7 (12), 4408-4414, 2017
InAlAs solar cell on a GaAs substrate employing a graded InxGa1− xAs–InP metamorphic buffer layer
I Mathews, D O'Mahony, A Gocalinska, M Manganaro, E Pelucchi, ...
Applied Physics Letters 102 (3), 2013
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