G A Sapunov
G A Sapunov
St.Petersburg Academic University
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Dopant-stimulated growth of GaN nanotube-like nanostructures on Si (111) by molecular beam epitaxy
AD Bolshakov, AM Mozharov, GA Sapunov, IV Shtrom, NV Sibirev, ...
Beilstein journal of nanotechnology 9 (1), 146-154, 2018
Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si
AD Bolshakov, VV Fedorov, KY Shugurov, AM Mozharov, GA Sapunov, ...
Nanotechnology 30 (39), 395602, 2019
Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy
VV Fedorov, AD Bolshakov, DA Kirilenko, AM Mozharov, AA Sitnikova, ...
CrystEngComm 20 (24), 3370-3380, 2018
Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires
AD Bolshakov, LN Dvoretckaia, VV Fedorov, GA Sapunov, AM Mozharov, ...
Semiconductors 52 (16), 2088-2091, 2018
Theoretical modeling of the self-catalyzed nanowire growth: nucleation-and adsorption-limited regimes
AD Bolshakov, AM Mozharov, GA Sapunov, VV Fedorov, LN Dvoretckaia, ...
Materials Research Express 4 (12), 125027, 2017
Self-Catalyzed MBE-Grown GaP Nanowires on Si (111): V/III Ratio Effects on the Morphology and Crystal Phase Switching
VV Fedorov, AD Bolshakov, LN Dvoretckaia, GA Sapunov, DA Kirilenko, ...
Semiconductors 52 (16), 2092-2095, 2018
Effective Suppression of Antiphase Domains in GaP (N)/GaP Heterostructures on Si (001)
AD Bolshakov, VV Fedorov, OY Koval, GA Sapunov, MS Sobolev, ...
Crystal Growth & Design 19 (8), 4510-4520, 2019
Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane
OY Koval, VV Fedorov, AD Bolshakov, SV Fedina, FM Kochetkov, ...
Nanomaterials 10 (11), 2110, 2020
Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface
KY Shugurov, AM Mozharov, AD Bolshakov, VV Fedorov, GA Sapunov, ...
Nanotechnology 31 (24), 244003, 2020
Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon
OY Koval, VV Fedorov, NV Kryzhanovskaya, GA Sapunov, DA Kirilenko, ...
CrystEngComm 22 (2), 283-292, 2020
Modeling the semiconductor devices with negative differential resistance based on nitride nanowires
AM Mozharov, FE Komissarenko, AD Bolshakov, VV Fedorov, ...
Journal of Physics: Conference Series 917 (8), 082017, 2017
Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates
VV Fedorov, Y Berdnikov, NV Sibirev, AD Bolshakov, SV Fedina, ...
Nanomaterials 11 (8), 1949, 2021
XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
OY Koval, VV Fedorov, AD Bolshakov, IE Eliseev, SV Fedina, ...
Nanomaterials 11 (4), 960, 2021
Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential
AM Mozharov, AA Vasiliev, AD Bolshakov, GA Sapunov, VV Fedorov, ...
Semiconductors 52 (4), 489-492, 2018
Synthesis and optical characterization of GaAs epitaxial nanoparticles on silicon
GA Sapunov, VV Fedorov, OY Koval, VA Sharov, LN Dvoretckaia, ...
Crystal Growth & Design 20 (1), 300-306, 2019
Growth and optical properties of GaPN/GaP heterostructure nanowire array
OY Koval, GA Sapunov, VV Fedorov, IS Mukhin
Journal of Physics: Conference Series 1400 (5), 055036, 2019
Influence of interface layer preparation on the electrical and spectral characteristics of GaN/Si solar cells
KU Shugurov, AM Mozharov, GA Sapunov, VV Fedorov, AD Bolshakov, ...
Journal of Physics: Conference Series 993 (1), 012034, 2018
Effect of Ga seeding layer on formation of epitaxial Y-shaped GaN nanoparticles on silicon
VV Fedorov, AD Bolshakov, AM Mozharov, GA Sapunov, IV Shtrom, ...
Journal of Physics: Conference Series 917 (3), 032040, 2017
Single GaN Nanowires for Extremely High Current Commutation
K Shugurov, A Mozharov, G Sapunov, V Fedorov, M Tchernycheva, ...
physica status solidi (RRL)–Rapid Research Letters 15 (4), 2000590, 2021
Epitaxial GaN nanotripods: morphology and crystal structure
GA Sapunov, AD Bolshakov, VV Fedorov, AM Mozharov, DA Kirilenko, ...
Journal of Physics: Conference Series 1038 (1), 012053, 2018
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